1. Induction Heating & MWO Solutions
Fairchild Semiconductor
Aug. 2013

2. Why We Focus On Induction Heating?
Conventional
Induction heating
Glass plate
Great thermal efficiency
90% thermal efficiency
Induction cookers offer the highest efficiency around 90% while traditional halogen, electrical heating, and gas offer only 58%, 47%, and 40% respectively
Flameless cooking
Safety : no open flames
no concerns about gas explosion
Easy to clean
Induction
Halogen
Electric
Gas
90%
58%
47%
40%
Radio unit : 20W/port
Rapid heating system
Greater heat consistency
Precise heat control

3. System Trend <2.3kW <2kW <3.5kW Applications Topologies
Features
Table-top
SE Inverter
Only 1000V~1700V IGBT opportunity
Low cost structure
BJT drive circuit is common
No needs PFC
No bulk capacitor
Chock coil & input cap. form a passive PFC (>95% PF)
Advantages
Needs only single IGBT
No needs isolated gate drive circuits
Simple and cheap
No need high performance co-pak diode
SA IGBT is prefer
Disadvantages
Needs high voltage components
(IGBT, Capacitor & Inductor)
Output power limitation : < 2.3kW
Rice-jar
<2.3kW
Microwave oven
<2kW
Cook-top
HB Inverter
Two 600V(or 650V) IGBTs & HVIC (or opto) opportunity
No needs PFC
No bulk capacitor
Chock coil & input cap. form a passive PFC (>95% PF)
Advantages
Prefer to over 2.3kW
Better efficiency
Lower working voltage (600V or 650V IGBTs)
Disadvantages :
Expensive
Needs 2 IGBTs & many resonant capacitors
Higher resonant current : thicker wire diameter and device ratings
Needs isolated gate drive circuit (HVIC or Opto)
Needs high performance co-pak diode
Radio unit : 20W/port
<3.5kW

4. FCS IGBT Technical Trend
Emitter
Emitter
Emitter
Emitter
Emitter
Gate
Gate
Gate
Gate
Gate n+ n+
p++ n+
p++ n+
p++ n+
p - base
p - base
p - base
p - base
p - base
n -
n -
n -
n -
n -
n (Field stop layer)
n (Field stop layer) p- p- n
Buffer layer
Collector
Collector
Collector p-
Field stop
Trench IGBT
Field stop Shorted Anode
Trench IGBT p- p-
Collector
Collector
NPT Trench IGBT
Collector
NPT Planar IGBT
 Increase current density
Reduce the epi thickness
Embedded the FS layer
Embedded
PT Planar IGBT
Benefits of NPT over PT
No Epi wafer
No Lifetime Control Process  Simpler Process
Positive Temp Coefficient  Thermal Stability & Easy parallel operation
Ruggedness  Large SOA (Safe Operating Area)
Benefits of Field Stop over NPT
Buffer layer terminates electric field in a shorter distance
 enables reduced die thickness
Reduced die thickness  Reduced Vce(sat) for the same Eoff
Buffer layer improves minority carrier recombination
Reduced Eoff due to reduced tail current
Benefits of Trench IGBT over Planar IGBT
High current density
Increase current rating of module with smaller chip
Benefits of Shorted Anode IGBT over Field Stop IGBT
Diode embedded(Induction Heating Application)
: IGBT + Diode (2 chips)  only IGBT (1 chip)

5. Vertical Structure Comparison
FS-IGBT vs. FA-SA IGBT
Field Stop IGBT
Shorted Anode IGBT
p - base
n -
Collector
p++ n+
Emitter
n (Field stop layer) p-
Gate
n - n+
Emitter p- n
Collector
Gate
n (Field stop layer)
p - base
p++
Embedded Diode

6. What’s Shorted Anode IGBT?
SA FS IGBT has the merged N/P collectors inside
 doesn’t require a separate diode
N+ collector
P+ collector
Field stop layer G a t e N+ P+
N drift
JFET
Key Process
Backside double imp with a photo mask on thin WF
High rate of anode activation
 Laser annealing process indispensable
(low thermal budget annealing)
Backside Anode Pattern N P

7. What’s Shorted Anode IGBT?
Conventional FS IGBT
Doesn’t include the intrinsic body diode due to its p-, n-, n, p+ structure.
Should be packaged together with an additional FRD for its most applications.
FS SA IGBT
Inserting the n+ collector in the p+ collector layer.
The n+ collector directly contacts to the field stop layer
 acts as a cathode of PN diode while the p+ collector layer acts as the general collector of FS T IGBT.

8. Product Line Up

9. IH Cooker (Table-top Cooker)
IGBT solution
Topology
component
FSID
Description
PKG
Remark
Single Ended
Resonant
Inverter
IGBT　
FGA15S125P
1250V / 15A FS2 SA Trench IGBT
TO3PN
FGA20S125P
1250V / 20A FS2 SA Trench IGBT
FGA20S140P
1400V / 20A FS2 SA Trench IGBT
FGA25S125P
1250V / 25A FS2 SA Trench IGBT
FGA30S120P
1300V / 30A FS2 SA Trench IGBT
FGH30S130P
TO247
Key Features
- FS2 SA Trench IGBT offer superior conduction loss and switching performance ;
 Lower Vce(sat) through thin wafer process over NPT Trench IGBT
 Lower switching loss through improved minority carrier recombination of buffer layer

10. IH Cooktop (Large IH Cooker)
IGBT/ MOSFET & Gate Driver solution
Key Features
- FS 2nd Gen. 600V IGBT(-SMD) which have following advantages over FS 1st Gen. (-UFD/ SFD)
 20% lower Vce(sat) & Switching loss
 Optimized Eon loss , enhanced Reliability to guarantee Tjmax at 175degC
 FS Trench 650V IGBT: FGH40T65SPDF under developing(ER sample: P08,13)
- FS2 SA Trench 1300,1400V IGBT offer superior conduction loss and switching performance ;

11. Rice Cooker (IH Jar) IGBT & Gate Driver solution Key Features
- FS2 SA Trench IGBT offer superior conduction loss and switching performance ;
 Lower Vce(sat) through thin wafer process over NPT Trench IGBT
 Lower switching loss through improved minority carrier recombination of buffer layer

12. MWO (Microwave Oven) IGBT & Gate Driver solution Key Features
Topology
component
FSID
Description
PKG
Remark
Single Ended
Resonant
Inverter
IGBT
FGA50S110P
1100V / 30A FS2 SA Trench IGBT
TO3PN
FGA20S140P
1400V / 20A FS2 SA Trench IGBT
FGA30S120P
1300V / 30A FS2 SA Trench IGBT
Half Bridge
FGH60N60SMD
600V / 60A FS IGBT
TO247
FGH40N60SMD(F)
600V / 40A FS IGBT
FGH20N60SFD
600V / 20A FS IGBT
Gate Driver
FOD3184
Gate Drive Optocoupler, High Noise Immunity, 3A Output
DIP-W
SMDIP-W　
Opto
FAN3111
Single 1A High-Speed, Low-Side Gate Driver
SOT-23
LVIC
Key Features
- FS 2nd Gen. 600V IGBT(-SMD) which have following advantages over FS 1st Gen. (-UFD/ SFD)
 20% lower Vce(sat) & Switching loss than 1st generation FS IGBT
 Optimized Eon loss , enhanced Reliability to guarantee Tjmax at 175degC
- FS2 SA Trench IGBT offer superior conduction loss and switching performance ;
 Lower Vce(sat) through thin wafer process over NPT Trench IGBT
 Lower switching loss through improved minority carrier recombination of buffer layer

13. Product roadmap Y2011 Y2012 Y2013 Y2014 Y2015 Y2016
FS Trench IGBT for IH & MWO
Y2011
Y2012
Y2013
Y2014
Y2015
Y2016
1100V 50A FS2 SA Trench
For Rice JAR & MWO
IGBT
1100~1400V FS3 Trench Tech
For Rice JAR, Cooker, MWO
1250V 15A & 20A FS2 SA Trench
For IH cooker
1300V 30A FS2 SA Trench
For Rice JAR & Cook top
1500~1700V FS3 Trench Tech
1400V 20A FS2 SA Trench
For IH Cooker
650V FS Trench Gen3
( fast switching )
For Cook top
Fill Colors:
(1) Green: Released
(2) Blue: Under development
(3) Red: TBD

14. Appendix
Benchmark Report -FGA15S125P -FGA20S125P -FGA20S140P -FGA25S125P -FGA30S120P -FGA50S110P

15. Benchmark Report -FGA15S125P

16. Performance Benchmark Results
DC data & Switching performance (Tc=25deg.C)
Device
VCE [V]
VCE(sat) [V]
VF [V]
Eoff [uJ]
@15A
@Set(30A)
FGA15S125P
1250
2.25
1.92
927
FGA15N120ANTD
1200
2.00
1.72
1403
FGA20S125P
1.80
1.60
1144

17. ZVS Switching Test Result @ Single-ended IH Test Set up
Vin=220Vrms, 50Hz
FGA15S125P Eoff = 927uJ
FGA15N120ANTD Eoff = 1403uJ
Vge:20V/div
Vce:100V/div
Ic:4A/div
Eloss:100uJ/div
Vge:20V/div
Vce:100V/div
Ic:4A/div
Eloss:100uJ/div

18. Eoff & Vce(sat)
FGA15N120ANTD
FGA15S125P
The total power loss of FGA15S125P is reduced about 15% than FGA15N120ANTD.

19. Thermal Test Test Circuit Temp. Test
Temp. measurement
( LR4110E:YOKOGAWA)
Power supply
IH-cooker
Test result : 220Vrms, 50Hz, 14min

20. Benchmark Report -FGA20S125P

21. Performance Benchmark Results
DC data & Switching performance (Tc=25deg.C)
Device
VCE [V]
VGE(th) [V]
VCE(sat) [V]
VF [V]
Eoff [uJ]
@20A
@Set (30A)
FGA20S125P
1250
6.11
1.92
1.76
1144
FGA20S120M
1200
6.05
1.57
1.65
1428
FGA25N120ANTD
6.18
1.86
2.15
1584

22. ZVS Switching Test Result @ Single-ended IH Test Set up
FGA20S125P
FGA20S120M
FGA25N120ANTD
Eoff:1144[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Eoff:1428[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Eoff:1584[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Time:1us/div
Time:1us/div
Time:1us/div 22

23. Thermal Test Test Condition Vin: 220VAC 60Hz, Test Circuit Temp. Test
Pout : 1850W
fsw : 20.7kHz
Test Circuit
Temp. Test
FGA20S125P
H / S Q
Rectifier
Thermal test result
Test equipment
Device
Pin [W]
Vce(sat). Avg.
Temp. Avg. [℃]
EMC
FGA20S125P
1850W
1.92 81
FGA20S120M
1.57
82.3
FGA25N120ANTD
1.86
89.6

24. Pot-Detection Noise Test Results
FGA20S125P
“A” company
VGE:10V/div
IC::10A/div
VGE:10V/div
IC::10A/div
“B” company
“C” company
VGE:10V/div
IC::10A/div
VGE:10V/div
IC::10A/div 24

25. Benchmark Report -FGA20S140P

26. Performance Benchmark Results
DC data & Switching performance (Tc=25deg.C)

27. ZVS Switching Test Result @ Single-ended IH Test Set up
FGA20S140P
“A” company
Eoff:708[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Eoff:800[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Time:500ns/div
Time:500ns/div 27

28. Thermal Test Test Condition Vin: 220VAC 60Hz, Test Circuit Temp. Test
Pout : 1850W
fsw : 20.7kHz
Test Circuit
Temp. Test
FGA20S140P
H / S Q
Rectifier
Thermal test result
Test equipment
Device
Pin [W]
No.
Vce(sat)
Temp. [℃]
EMC
H / S
FGA20S140P
1850W
#01
1.910
76.4
53.8
#02 78
54.3
#03
1.915
76.2
52.8
#04
1.930 80
#05
1.955
78.8
53.9
Avg
1.924
77.9
“A” Company
1.570
75.3
53.4
77.2
54.1
75.2 53
76.6
53.1
1.560
75.6
1.568
76.0
53.3

29. Pot-Detection Noise Test Results
“A” company
FGA20S140P
Vge:10V/div
Vce:200V/div
Ic:10A/div
Vge:10V/div
Vce:200V/div
Ic:10A/div
500ns/div
No pot detection noise
No pot detection noise 29

30. Capacitor Surge Test Test Circuit+
Vinput _
IH Cooker C1
20~25uF S1
Iinput
To verify the stability of IGBT when other HAs are plugged or un-plugged to AC grid
- New IGBT(FGA20S140P) was not damaged despite frequent switch on/off.

31. Benchmark Report -FGA25S125P

32. Performance Benchmark Results
DC data & Switching performance (Tc=25deg.C)

33. ZVS Switching Test Result @ Single-ended IH Test Set up
FGA25S125P
“A” company
Eoff:875[uJ]
Vge:10V/div
Vce:80V/div
Ic:4A/div
Eoff:1095[uJ]
Vge:10V/div
Vce:80V/div
Ic:4A/div
time:1us/div
time:1us/div
Time:500ns/div 33

34. Thermal Test : Vin = 220Vac Test Circuit Test Board
Temp. measurement
( LR4110E:YOKOGAWA)
Rectifier
IGBT
Test result : 50Hz, 7min
Power supply
FT-2101
* Steamer mode
* Kettle mode
Device
Pin [W]
No.
Vce(sat)
@rated
current
Temp. [℃]
EMC
FGA25S125P
1270
#01
1.780
53.2
#02
1.770
53.4
Avg
1.775
53.3
‘A’ Company
1.495
50.2
1.505
50.6
50.4
Device
Pin [W]
No.
Vce(sat)
@rated
current
Temp. [℃]
EMC
FGA25S125P
1870
#01
1.780
71.2
#02
1.770
71.5
Avg
1.775
71.4
‘A’ Company
1.495
68.7
1.505
69.2
69.0

35. Thermal Test : Vin = 250Vac Test Circuit Test Board
Temp. measurement
( LR4110E:YOKOGAWA)
Rectifier
IGBT
Test result : 50Hz, 7min
Power supply
FT-2101
* Steamer mode
* Kettle mode
Device
Pin [W]
No.
Vce(sat)
@rated
current
Temp. [℃]
EMC
FGA25S125P
1580
#01
1.780 58
#02
1.770
58.2
Avg
1.775
58.1
‘A’ Company
1.495
56.5
1.505
56.9
56.7
Device
Pin [W]
No.
Vce(sat)
@rated
current
Temp. [℃]
EMC
FGA25S125P
1680
#01
1.780
60.3
#02
1.770
60.9
Avg
1.775
60.6
‘A’ Company
1.495
59.7
1.505
59.3
59.5

36. Pot-Detection Noise Test Results
FGA25S125P
“A” company
Vge:10V/div
Vce:100V/div
Vge:10V/div
Vce:100V/div
No pot detection noise
No pot detection noise 36

37. Capacitor Surge Test Cap surge test Test condition Test result
- Applied input voltage : 180Vac, 220Vac, 250Vac (50Hz)
- Capacitor : 20uF, 30uF
- On/Off time interval of Relay(S1) : 3s, 10s
- Test time : 60min +
Vinput _
IH Cooker C1
20~25uF S1
Iinput
Test result
test result
#01
#02
#03
#04
#05
#06
#07
#08
#09
#10
FGA25S125P
pass
pass　
To verify the stability of IGBT when other HAs are plugged or un-plugged to AC grid
- New IGBT(FGA25S125P) was not damaged despite frequent switch on/off. 37

38. Benchmark Report -FGA30S120P

39. Performance Benchmark Results
DC data & Switching performance(Tc=25deg.C)

40. ZVS Switching Test Result @ Single-ended IH Test Set up
FGA30S120P
FGA30N120FTD
“A” company
Vge:10V/div
Eoff:732[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Eoff:624[uJ]
Vge:10V/div
Vce:200V/div
Ic:5A/div
Eoff:612[uJ]
Vce:200V/div
* Test condition : Ic=30A, Vge=15.0V, Tc=25deg.C 40

41. Thermal Test Single-ended IH Test Set up Temp.@EMC
IH Cooker Zig Pin=1800W
Device
T_Ambient
T_H/S
T_EMC
[deg.C]
FGA30S120P
38.3　
59.9
77.9　
FGA30N120FTD
38.8　
60.5
79.5　
“A” company
38.1
58.4 75
* Test condition : AC220V / 60Hz, 1800W 10min.

42. Benchmark Report -FGA50S110P

43. Performance Benchmark Results
DC data & Switching performance (Tc=25deg.C)
Device
BVCE [V]
VGE(th) [V]
VCE(sat) [V]
VF [V]
Eoff [uJ]
@20mA
@30A
@50A
@30A (MWO)
(fsw : 42.7kHz)
@30A (IH Jar)
(fsw : 31kHz)
FGA50S110P
1120
5.6
1.80
2.16
1.98
312
266
“T” Company
1080
4.0
1.52
1.76
352
302
“I” Company
1230
6.1
1.55
1.91
1.53
324
260
FGA50N100BNTD
1164
1.81
1.57
472
398

44. Thermal Performance Evaluation I
MWO mode
Spec.
Vin : 110V
Pin : 850W
fsw : 43kHz
0.2uF
1uF
Devices
fs[kHz]
Pin [W]
Eoff[uJ]
EMC[°C]
FGA50S110P
42.7
825
312
72.8
“T” Company
840
352
77.9
“I” Company
831
324
74.9
FGA50N100BNTD
834
472
82.8
* Test was implemented with an experimental set-up

45. Eoff Comparison FGA50S110P “T” Company “I” Company FGA50N100BNTD
Vge:10V/div
Vge:10V/div
Ic:6A/div
Eoff:312[uJ]
Ic:6A/div
Eoff:352[uJ]
Vce:90V/div
Vce:90V/div
“I” Company
FGA50N100BNTD
Vge:10V/div
Vge:10V/div
Ic:6A/div
Eoff:324[uJ]
Ic:6A/div
Eoff:472[uJ]
Vce:90V/div
Vce:90V/div

46. Eoff Comparison FGA50S110P “T” Company “I” Company FGA50N100BNTD
Vge:10V/div
Vge:10V/div
Ic:6A/div
Eoff:266[uJ]
Ic:6A/div
Eoff:302[uJ]
Vce:90V/div
Vce:90V/div
“I” Company
FGA50N100BNTD
Vge:10V/div
Vge:10V/div
Ic:6A/div
Eoff:260[uJ]
Ic:6A/div
Eoff:398[uJ]
Vce:90V/div
Vce:90V/div

47. Pot Detection Noise Immunity Comparison FGA50S110P “T” Company
“I” Company
FGA50N100BNTD
Vin = 130V
Vin = 130V
Vin = 130V
Vin = 130V
Vin = 150V
Vin = 150V
Vin = 150V
Vin = 150V

48. Thermal Performance Evaluation
IH Jar Mode
Spec.
Vin : 110V
Pin : 1200W
fsw : 30.5kHz
87.6uH/43.1uH
0.2 uF
1uF
Devices
fs[kHz]
Pin [W]
Eoff[uJ]
EMC[°C]
FGA50S110P
30.5
1128.2
266
70.6
“T”Company
1126.8
302
69.3
“I” Company
1124.2
260
68.2
FGA50N100BNTD
1126.5
398
86.6
* Test was implemented with an experimental set-up

49. Contact Information
Marketing: Nick Kim
Application Engineer: Jaeeul Yeon

50. twitter.com/fairchildSemi