Fairchild HVIC Power Conversion, PCIA Oct. 2013.

Fairchild HVIC Power Conversion, PCIA Oct. 2013

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CONTENTS Product _ Main Features & List Comparison Information
Introduction of New HV Gate Drive IC Application Information

Main Features & List of Product

P Main Features Typical Application Circuit Benefits
High side Only Half Bridge Benefits Better noise immunity (due to noise canceling circuit over high dv/dt common-mode noise) Low power consumption (IQBS / IQCC are lower than competitor's device) dVs/dt transient immunity voltage level (50V/ns) Extended allowable negative Vs swing to -9.8V for signal VCC = VBS = 15V Matched propagation delay below 50nS UVLO functions TTL compatible input threshold levels

Main Features P Functional Block Diagram level shifter Timing Chart

Ballast for Fluorescent Lamp,
Product List by Application P Appliance Display E-bike & E-Scooter FAN7380 FAN7382 FAN7383 FAN7384 FAN7388 FAN7888 FAN73833 FAN7389 FAN73892 Motor Inverter FAN7380 FAN7382 FAN7383 FAN7384 FAN7388 FAN73833 FAN7392 FAN7393 FAN7389 FAN73892 FAN7361 FAN7371 FAN7382 FAN7385 FAN7390 FAN73711 FAN73611 FAN7390A* BLDC Motor Inverter PDP Sustain FAN7390 FAN7380 FAN7382 FAN7383 FAN7384 FAN7388 FAN7392 FAN7393 FAN73932 FAN7390A* PDP Energy recovery Industrial Lighting Solar Inverter UPS , Motor IH FAN7371 FAN7380 FAN7382 FAN73832 FAN7387 FAN7361 FAN7371 FAN7382 FAN7390 FAN73832 FAN7392 FAN7393 FAN73932 FAN73933 FAN7393A FAN7390A* FAN7371 FAN7390 FAN7388 FAN7390A* FAN7382 Ballast for Fluorescent Lamp, HID Lamp Inverter Audio Class D AMP HID Lamp Inverter Motor Inverter Power Supply Automotive DC-DC Converter ( * : New Product)

Driving Current (source/sink)
Product List by Line-up P Input - Output Type FSC Device Driving Current (source/sink) 90/180mA 350/650mA Over 2/ 2 A 1 ㅡ 1 (2 ㅡ 2) High Side Only Single Output FAN7361/2 (250/500mA) FAN73611 (250/500mA) FAN7371 (4A) FAN73711 (4A) Multi (Dual) Output FAN7385 2 ㅡ 2 High&Low Side Non-separated output FAN7382 FAN7842 (200V offset) FAN7390 (4.5A) FAN7392 (3.0A) FAN7390A* (4.5A) 1 ㅡ 2 (2 ㅡ 2) Half-bridge Separated output FAN7383 FAN7380　 FAN7384 (250/500mA) FAN73832 FAN73833 FAN (2.5A) FAN73932 (2.5A)　 FAN73933 (2.5A) FAN7393A (2.5A) 6 ㅡ 6 3-Phase Half-bridge FAN7388 FAN7389 FAN73892 ( * : New Product)

Product List by History P
MP Under Development (none) P 2004 2006 2007 2008 2009 2010 2011 2013 0.65A Half Bridge (FAN73833) 0.5A HB,CS,DT (FAN7384) 4.5A H&L Side (FAN7390A) 3A 2-2 H&L Side, SD (FAN7392) 0.65A 1 in HB,SD,DT (FAN7383),14SOP 0.65A 3 Phase Driver, CS,FO (FAN7389/FAN73892) 0.65A 1in HB,SD,DT (FAN73832),8SOP 2.5A 1-2 Half-Bridge, SD,DT (FAN7393/FAN73932) 0.18A Half Bridge (FAN7380) 0.65A 3 Phase Half-Bridge (FAN7388) 2.5A 2-2 Half-Bridge, DT (FAN73933) 0.65A H&L Side (FAN7382/FAN7842) 4.5A H&L Side (FAN7390) 1ch,4.0A High Side (FAN73711) 1ch,0.5A High Side (FAN7361/2) 1ch,4.0A High Side (FAN7371) 1ch,0.5A High Side (FAN73611) 2ch,0.65A High Side (FAN7385) 2.5A 1-2 Half-Bridge, SD,DT (FAN7393A)

Comparison Information

Cross Reference; Function Equivalents C
Topology IN-OUT FCS IR STM ON Mitsubishi Note High-Side Only 1-1 FAN7361 IR2117 FAN73611 IRS21171 2-2 FAN7385 IRS21853 (2A) M81707FP FAN7371 IRS21851 FAN73711 IRS21850 High & Low Side FAN7382 IR2106 L6387 NCP5106 FAN7842 (200V) FAN7390 FAN7390A* IRS2181 IRS21814 IRS21864 M81709FP FAN7392 IRS2110 M81702FP M81737FP R2113 (500V) M81737FP(No SD, Low Current) Half-Bridge FAN7380 IR2304 L6385 NCP5304 1-2 FAN7383 IR21094 SD and DT FAN73832 IR2109 (2111) L6384 NCP5111 FAN73833 L6388 FAN7384 L6386 SD, DT, CS and FO FAN7393 IRS21844 FAN7393A FAN73932 IRS2184 FAN73933 IRS21834 IRS21834 : LIN (Active Low) 3-Phase 6-6 FAN7388 IR2136 FAN7888 (200V) FAN7389 IRS2336 M63993FP 6ED003L06-F (Infineon) ( * : New Product)

C Pin to Pin; FAN7380/FAN73833 Half – Bridge, High & Low Side 8
LIN VB HIN HO VCC VS COM LO Pin to Pin; FAN7380/FAN73833 8 C Half – Bridge, High & Low Side Maker Part Topology Package Voffset Io+/Io- (mA) Integrated Bootstrap Diode UVLO SHOOT THROUGH Note FCS FAN7380 Half Bridge 8 SOP 600 90 / 180 Vcc / Vbs Yes - 8 DIP package doesn’t existed FAN73833 350 / 650 Vcc/ Vbs IR IR2304 8 DIP, 8 SOP 60 / 130 - Interchangeable with FAN7380 IRS2304 290 / 600 - Interchangeable with FAN73833 STM L6385E High & Low Side 400 / 650 No - Similar with FAN73833, - No Short Through L6387E Vcc - Similar with FAN73833 - No VBS UVLO, - Built-in Bootstrap Diode L6388E ON NCP5304 250 / 500 Red : Representative Competitor’s Device

Pin to Pin; FAN7371/FAN73711 C High Side 8 VCC VB IN HO N VS GND N
Maker Part Package Voffset Io+/Io- (mA) UVLO Shunt Regulator (Vcc & Vbs) Note FCS FAN7371 8 SOP 600 4000 / 4000 Vbs Yes (25V) - Typical Vshunt is 25V FAN73711 Yes (23V) - Typical Vshunt is 23V FAN73611 250 / 500 Vcc / Vbs No - No Shunt Regulator IR IRS21850 Yes (20V) - Similar with FAN7371 and FAN 73711 - Typical Vshunt is 20V - Qualification Information exists IRS21851 8SOP - No Qualification Information “Not Recommended for new design: Recommend using IRS21850 MITSUBISHI M81725FP 3000 / 3000 - Similar with FAN7371 , No shunt Regulator.

C Pin to Pin; FAN7382/FAN7842 High & Low Side, Half Bridge 8 VCC VB
HIN HO LIN VS COM LO Pin to Pin; FAN7382/FAN7842 8 C High & Low Side, Half Bridge Maker Part Topology Package Voffset Io+/Io- (mA) Integrated Bootstrap Diode UVLO Note FCS FAN7382 High & Low 8 DIP, 8 SOP, 14 SOP 600 350 / 650 Vcc / Vbs - 14 DIP package doesn’t existed　 FAN7842 8 SOP 200 - Only 8 SOP package - 200V Offset IR IR2101 8 DIP, 8 SOP 210 / 600 Vcc - Similar with FAN7382 , No Vbs UVLO IR2106 200 / 350 - Interchangeable with FAN7382 IR2301 IR2308 Half Bridge - Similar with FAN7382, Half Bridge IRS2001 290 / 600 - Similar with FAN7842 - No Vbs UVLO IRS2101 IRS2106 IRS2301 120 / 250 IRS2308 IRS26072DSPBF Yes - Similar with FAN7382 - Built-in Bootstrap Diode IRS2607DSPBF ON NCP5106A 250 / 500 NCP5106B MITSUBISHI M81706AFP 200/ 350 M81719FP - Interchangeable with FAN7382 　 M81720FP - Similar with FAN7382, Half Bridge　 SANYO TND519SS 400 / 450

C Pin to Pin; FAN73932 Half - Bridge 8 FAN73932 IR2184
IN VB SD HO COM VS LO VCC 8 C Pin to Pin; FAN73932 Half - Bridge Maker Part Package Voffset Io+/Io- (mA) UVLO Note FCS FAN73932 8 SOP 600 2500 / 2500 Vcc/ Vbs IR IR2184 8 DIP, 8 SOP 1900 / 2300 Vcc / Vbs - Interchangeable with FAN73932 ( 8 SOP only) IRS2184 - Interchangeable with FAN73932 ( 8 SOP only)　

C Pin to Pin; FAN7390/FAN73901 High & Low Side 8 Part FAN7390M (M1)
HIN VB LIN HO COM VS LO VCC 8 C Pin to Pin; FAN7390/FAN73901 High & Low Side Maker Part Package Voffset Io+/Io- (mA) Note FCS FAN7390M (M1) 8 SOP (14 SOP) 600 4500 / 4500 FAN73901 8 SOP 2500 / 2500 IR IR2181 8 DIP, 8 SOP 1900 / 2300 - Interchangeable with FAN73901　 IRS2181 IRS2186 4000 / 4000 - Interchangeable with FAN7390 ON NCP5181 1400 / 2200 MITSUBISHI M81722FP 3000 / 3000

C Pin to Pin; FAN7390 High & Low Side 14 FAN7390M1 (M) FAN7390A*
HIN N LIN VB VSS HO N VS COM N LO N VCC N C Pin to Pin; FAN7390 14 High & Low Side Maker Part Package Voffset Io+/Io- (mA) Note FCS FAN7390M1 (M) FAN7390A* (8 SOP) 14 SOP 600 4500 / 4500 IR IR21814 14 DIP, 14 SOP 1900 / 2300 Interchangeable with FAN7390, FAN7390A IRS21814 IRS21864 4000 / 4000 ( * : New Product)

C Pin to Pin; FAN7392 High & Low Side 14 16 HIN N LO N LIN VB COM VSS
VSS HO N VS COM N LO N VCC N LO N COM VSS VCC LIN N SD N HIN VS VDD VB N VO N C Pin to Pin; FAN7392 14 16 High & Low Side

C Pin to Pin; FAN7393 Half - Bridge 14 FAN7393 FAN7393A IR21844
IN N SD VB VSS HO DT VS COM N LO N VCC N C Pin to Pin; FAN7393 14 Half - Bridge Maker Part Package Voffset Io+/Io- (mA) Shunt Regulator (Vcc) (Vbs) Note FCS FAN7393 14 SOP 600 2500 / 2500 No - SD is internally clamped with a 5.2 V zener diode FAN7393A 14 SOP Yes (23V) - Shunt regulator on Vbs - Cycle by Cycle shutdown IR IR21844 14 DIP, 14 SOP 1900 / 2300 - Interchangeable with FAN7393 (14 SOP only) - IN and SD are internally clamped with a 5.2V zener diode - No Shunt regulator IRS21844

Introduction of New HV Gate Drive IC

Typical Application Circuit
High-side Gate Drive IC – FAN73611 I Block Diagram Features - High side only gate drivers 3.3V and 5V Input Logic Compatible Common-mode dv/dt noise canceling circuit Allowable – Vs swing to – = 15V Built-in UVLO function for VDD and VBS Source/Sink current 250mA/500mA Pin compatible with IRS21171 Package : 8-SOP Target Application - Step-down DC-DC converter Typical Application Circuit

I FAN7361 and FAN73611 Comparison What’s different
The FAN73611 is a new high-side gate drive IC for 3.3V input logic compatible that can replace the FAN7361. Dynamic Electrical Characteristics Parameter FAN7361 FAN73611 Unit Symbol Definition Typ Max ton Turn-on propagation delay time 120 200 150 ns toff Turn-off propagation delay time 90 180 tr Rising time 70 160 140 tf Falling Time 30 100 60 Electrical Characteristics Parameter FAN7361 FAN73611 Unit Symbol Definition Min Max VIH Logic high input voltage 3.6 2.5 V VIL Logic low input voltage 1.0 0.8 Pin Configuration

1-2 Half-Bridge Gate Drive IC - FAN7393A Block Diagram Features - 1-2 Half bridge gate drivers 3.3V and 5V Input Logic Compatible Cycle by Cycle Edge-Triggered Shutdown Logic Programmable Dead-Time up to 5us Built-in Shoot-Through Prevention Circuit Built-in Shunt Regulator for VBS Sourcing/ Sinking current 2.5A/2.5A Pin compatible with IRS21844 Package : 14-SOP Target Application - High Speed MOSFET and IGBT Gate Driver - Induction Heating - High Power Supply Typical Application Circuit

FAN7393 and FAN7393A Comparison
What’s different The FAN7393A is a new high-side gate drive IC that can replace FAN7393 with same Pin assignment. Compared with FAN7393, FAN7393A has Cycle-by-Cycle Shutdown Function and Built-in shunt Regulator on VBS. Dynamic Electrical Characteristics Parameter FAN7393 FAN7393A Unit Symbol Definition Min Typ Max DT LO Turn-off HO Turn-On & HO Turn-Off to LO Turn-ON RDT =0 Ω 270 370 470 300 400 500 ns RDT =200kΩ -- 4 5 6 µs RDT =750k Ω 1.6 2.0 2.4 Cycle by Cycle Shutdown Output drivers keep low until the next Input transition

3-Phase Half-Bridge Gate Drive IC – FAN7389 I Block Diagram Features - 3-Phase Half bridge gate drivers 3.3V and 5V Input Logic Compatible Externally Programmable Delay for Fault Clear Built-in Shoot-Through Prevention Circuit Built-in Over Current Shutdown Built-in Soft Turn-off Function Sourcing/ Sinking current 350mA/650mA Package : 24-SOP Target Application - 3-Phase Inverter Motor - IR21363, IRS2336, 6ED003L06-F (Infineon) Typical Application Circuit

Protection Circuit- FAN7389
Waveform Soft Off

Application Information

Technology Improvement A
FAN7393A have better noise immunity compared to previous Generation. Generation 1st Gen. 2nd Gen 3rd Gen 4th Gen 2004 2005 2006 2008 ~ Technical Improvement New dv/dt noise cancellation Noise immunity Enhancer Built-in Shunt regulator Technical Fulfillment Extended allowable negative Vs operation DC voltage (VS= Negative Vs operation AC voltage extension Better noise immunity Applicative Product Designed for SPM FAN7361 FAN7380 FAN7382 FAN7385 FAN7383 FAN7384 FAN7390 FAN7392 FAN7393 FAN7371 FAN73711 FAN7393A FAN7390A* Negative Vs Noise Single Pulse ( * : New Device) I-Com/S-Com N ABNORMAL OPERATION 2nd Gen/I-G5 NORMAL ABNORMAL OPERATION 3rd Gen/ 4th Gen NORMAL OPERATION ABNORMAL OPERATION Normal operation Abnormal operation (Missing or Latch-up) Normal operation, but it was exceed the absolute rating

Why present undershoot spike voltage on Vs? A
Why present undershoot spike voltage on the output pin (Vs) When the negative voltage present at the source of the switching device during turn-off causes load current to flow in the low-side freewheeling diode as below Figure. In this case, the inductive stray elements, LS, may push Vs below COM. The amplitude of negative voltage proportional to the stray inductances and the turn-off speed, di/dt, of the switching device. The amplitude of negative voltage given by as below equation, For example, if a 10 ampere, gate driver with 100nH stray inductance switching time in 50ns, the amplitude of negative voltage spike between Vs and ground is -20V.

Why is undershoot spike on Vs pin important ? A
Effects in the undershoot spike on the output pin (Vs) Case 1. If undershoot voltage present on Vs pin, the high side output will temporarily latch in its current state.  Happen to upper and lower switches are short-circuit condition in Half-Bridge topology. Case 2. If the output pin undershoot spike has a time length that is in order to of tenths of nanoseconds the bootstrap capacitor can become overcharge.  Exceed the absolute maximum voltage (VBS) limits in the high side gate driver Case 3. Provided Vs remains within absolute maximum limits the IC will not suffer damages, however if Vs is lower than “Allowable negative Vs voltage” which was specified in the data sheet, input signal for high-side cannot be delivered to the high-side gate driver while undershoot  At this situation, the level shifter of the HVIC suffers from a lack of the operating voltage headroom. Case 1 Case 2 Case 3

Considering Points of the Bootstrap
Circuit Problem A

Remedies for Bootstrap Circuit Prob A
Adding a small resistor (RBOOT) in series with bootstrap diode The gate resistor was split into two resistors (RGATE and RVS) and adding a low forward voltage drop schottky diode from ground to VS. The gate resistor split into RGATE and RVS has a double purpose: It sets the turn-on and turn-off speed in the MOSFET and also provide current limiting for the schottky diode during the negative voltage transient of the source terminal of the main switch. In additional, the bootstrap capacitor is protected against over voltage by the two diodes connected to the ends of CBOOT. The only potential hazard by this circuit is that the charging current of the bootstrap capacitor must go through two resistors, RBOOT and RVS . The time constant of CBOOT ,RBOOT and RVS slows the recharge process which might be a limiting factor as the PWM duty ratio. This method can mitigate the problem. Unfortunately, the series resistor (RBOOT) does not provide a foolproof solution against an over voltage and it also slows down the recharge process of the bootstrap capacitor. we suggest the bootstrap resistor, RBOOT, not exceeding some Ohms (Typically 5~10Ohms) to avoid increasing the VBS time constant.

FAN7392 Negative (Abnormal) FAN7392 Negative DC Voltage
Results of Negative VS Pulse & DC Level Test A Add Positive/Negative Noise on VS - Negative : VDD=15V, VCC=VB=15V, VS=Positive/Negative Pulse Noise on VS Test Result VS Noise HVIC Output FAN7392 Negative (Abnormal) Negative Noise Peak FAN7392 NORMAL ABNORMAL OPERATION -27.8V I- Company’s N ABNORMAL OPERATION -6.4V FAN7392 Negative DC Voltage VS Voltage HVIC Output NORMAL OPERATION Negative DC Voltage -10.19V FAN7392 -6.38V ABNORMAL I- Company’s

Waveforms of Negative VS Pulse & DC Level Test A
FAN V I-Company’s A V VIN [10V/div] VS VHO VLO DC FAN /-10.20V I-Company’s A /-6.40V [2V/div] Missing Missing

Gate drive resistance Loss
Power Dissipation of HVIC (FAN7380) Where Temp =25℃, VDD = 15V, VDBOOT = 1V, VR = 400V, Freq =20KHz Item Symbol Equation Note High Side Static Loss PD, q(HS) = VR x ILK ＝400V×50uA ＝0.02W Calculated by leakage currents in the level shifting stage (e.g., VDD, VCC and VSS) Dynamic Loss PD,sw(HS) = (VR + VDD - VDBOOT) × QP × f ＝(400V＋15V-1V) × 3.9nC × 20kHz＝0.0323W Calculated by the level shifting circuit. ( VR ; rail voltage) Low Side PD,q(LS) = VDD x (IQDD + IQBS) ＝15V×( )uA ＝0.0042W Calculated by quiescent currents from the low voltage supplies (e.g., VDD, VCC and VSS) PD,sw(LS) = PCMOS = VDD • QCMOS • f = VDD • (IPDD + IPBS) ＝15V×( ) mA ＝0.0182W Dynamic losses associated with the switching of the internal CMOS circuitry Gate drive resistance Loss PG = 2xVDD x QG x f ＝ 2×15V×28nC×20kHz ＝0.0168W The losses in the gate drive resistance for charging external MOSFET (QG ; Total gate Charge of Switching Device) Total Power Loss PTotal = PD,q(HS) + PD,q(LS) + PD,SW(HS) + PD,SW(LS) + PG ＝ W

Power Dissipation of Level shift
Block Diagram Timing Chart Equation When Temp =25℃, VDD = 15V, VDBOOT = 1V, VR = 400V, Freq =100KHz, Ton= 150ns, Id = 13mA,

Behavior for Short pulse input
Output Characteristics for Short Pulse input Basically HVIC can transfer about 70ns pulse, even though input Pulse Width is shorter than internal Pulse Width(typ 150ns) of short pulse generator. It is necessary to protect against narrow PWM pulses lower than 80ns. Generally, we recommend to add RC filter on input pin to avoid response or any malfunction of HVIC. Please refer to

Current Rating (IO+/IO-) vs Gate charge (QG) A
Sourcing Current Capability (Turn-on) Sink Current Capability (Turn-off) <Gate Current Path during Turn-On and Turn-Off > Where, QG ; MOSFET gate charge at VGS = VDD Min. TON,CHARGE ; Minimum Charging Time during turn-on Min. TOFF,DISCHARGE ; Minimum Discharging Time during turn-off ; Empirically determined factor (influenced by delay through the driver input stages and parasitic elements) <Gate Charge Transfer Characteristics>

How to select the Bootstrap Capacitor
Minimum Value of CBOOT Total charge of the bootstrap capacitor Maximum allowable voltage drop on CBOOT Symbol Description QGATE Total Gate charge ILKCAP Bootstrap capacitor leakage current ILKGS Switch gate-source leakage current IQBS Bootstrap circuit quiescent current ILK Bootstrap circuit leakage current ILK_DIODE Bootstrap diode leakage current TON High side on time QLS Charge required by the internal level shifters A resistor (RBOOT) is placed in series with bootstrap diode so to limit the current when the bootstrap capacitor is initially charged. The value should not exceed the ohms (typically 5~10 Ω), which would increase the VBS time constant . Time Constant

How can calculating the gate resistance
Gate Resistances The switching speed of the output transistor (MOSFET or IGBT) can be controlled by size the turn-on/off resistors controlling the turn-on and turn-off gate current. Sizing the turn-on gate resistor Gate resistance may be chosen in order to fix either the switching-time or the output voltage slope. To obtain the desired switching time the gate resistance can be sized starting from Qgs, Qgd, VDD (or VBS), and Vgs. Where, Rg(ON) is the gate on resistance and RDRV(ON) is the driver equivalent on resistance. Output voltage slope and relation with turn-on resistor Turn-on resistor can be sized to control output voltage slope. (dVout/dt) Where, Cgd(off) is the Miller effect capacitor, specified as Crss in the datasheet. Therefore,

How can calculating the gate resistance
Sizing the turn-off gate resistor Turn-off gate resistor must be sized with applying worse case that the drain of the MOSFET in turn-off state is forced to commutate by external events. The following equation relates the MOSFET gate threshold voltage to the drain dv/dt; Where, Rg(off) is the gate on resistance, and RDRV(off) is the driver equivalent resistance

COMPANY CONFIDENTIAL Appendix A. HV IC Robustness Test Items A Items
Test Objective Test Circuit Positive VB Pulse Output status of the high-side driver is memorized by an internal latch circuit. The latch status must be only changed by input signal’s rising and falling edges. However, a noise pulse applied to between VB and VS also can change the latch status. Such latch status change driven by the noise cause malfunction of HVIC. In general, it normally causes disastrous failure. Therefore, this test result gives how much the HVIC is robust against VBS pulse noise. Negative VB Pulse When the VB falls into negative voltage, high voltage junction is biased in forward direction. After that, even through VB recovers positive voltage, current flows into the high voltage junction due to the reverse recovery phenomena, where the current amount is dependant on the charge builds up during forward bias, junction area and junction doping profile. These current flows are natural one. Therefore, it is impossible to stop such current flow. Unfortunately, these unwanted current flows causes abnormal operation of the HVIC. Negative VS Pulse When the negative voltage present at the source of the high-side switching device during turn-off causes load current to suddenly flow in the low-side freewheeling diode in half-bridge topology .This negative voltage can be serious trouble for the gate driver’s output stage since it directly affects the source pin, which called Vs pin, of the gate driver and might pull some of the internal circuitry significantly below ground. Even though the peak duration is short, the magnitude can be higher than the break-down voltage of the high-side driver, which is given by process. Such unwanted high voltage stress can abnormally trigger the latch of the high-side driver. The another problem caused by the negative voltage transient is the possibility to develop an over voltage across the bootstrap capacitor. If the voltage of bootstrap capacitor exceed absolute maximum voltage rating by under shoot spike on Vs pin, The gate drive IC will suffer damage. Negative VS DC The high side output (HO) will not respond to input transitions like as signal missing problem while Vs undershoot condition. At this situation, the level shifter of the high side gate driver suffers from a lack of the operating voltage headroom. We can called that “Allowable negative VS voltage ability for input signal propagation to output” and most of Fairchild HVIC has a allowable negative VS pin voltage of at least -9.8VDC at VBS=15V. COMPANY CONFIDENTIAL

Appendix B. Layout and Other General Guide-Lines A
Printed Circuit Board Layout The “Layout” for minimized stray inductances as follows: Direct tracks between switches with no loops or deviation. Avoid interconnect links. These can add significant inductance. Reduced the effect of lead-inductance by lowering package height above the PCB. Consider co-locating both power switches to reduce track length. Placement and routing for supply capacitor and gate resistors as close as possible to HVIC. The bootstrap diode as close as possible to bootstrap capacitor. Bootstrap Components The bootstrap resistor must be considered in sizing the bootstrap resistance that the current developed during initial bootstrap charge. If a resistor is needed in series with the bootstrap diode. The bootstrap capacitor using low-ESR capacitor such as ceramic capacitor. And the capacitor from VCC to COM supports both the low-side driver and bootstrap recharge. We recommended a value at least ten times higher than bootstrap capacitor The bootstrap diode must be used a lower forward voltage drop and switching time as soon as possible fast recovery such as ultra-fast. You can see more detailed information. Please refer to application note. (AN-6076)

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