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Fig. 2 Transport properties of a BP transistor at low temperature.
Transport properties of a BP transistor at low temperature. (A) Output characteristics of the BP device with a channel length of 100 nm at 300 K. (B) Output characteristics of the same device at 20 K. (C) Transfer characteristics of the 100-nm device for BP on HfLaO at different temperatures. (D) Hysteresis values of the 100-nm device for BP on HfLaO as a function of temperature. Xuefei Li et al. Sci Adv 2019;5:eaau3194 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
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