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Fig. 4 Ballistic simulation of BP FETs.
Ballistic simulation of BP FETs. Comparison of the (lines) MVS model fit and (symbols) measured data for the Id-Vd characteristics in Fig. 2. (A) 300 K. (B) 20 K. (C) Benchmark of ballistic efficiency in this work with Si planar MOSFETs. Xuefei Li et al. Sci Adv 2019;5:eaau3194 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
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