Presentation is loading. Please wait.

Presentation is loading. Please wait.

New 700/400V, 4A Bipolar Transistor in DPAK

Published byErica McCoy Modified over 5 years ago

Similar presentations

Presentation on theme: "New 700/400V, 4A Bipolar Transistor in DPAK"— Presentation transcript:

1 New 700/400V, 4A Bipolar Transistor in DPAK
Available Now! Features Surface Mount Technology Small Footprint – Area of 64mm² High Switching Speed Wide Safe Operating Area Pb free & MSL level 1 Tape & Reel Symbol Parameter Value Units BVCBO Collector-Base Voltage 700 V BVCEO Collector-Emitter Voltage 400 IC Collector Current (DC) 4 A TJ Junction Temperature 150 oC NEW MPN Symbol Parameters Conditions Min Max FJD3305 hFE DC Current Gain VCE = 5V, IC = 1A 19 28  VCE = 5V, IC = 2A 8 40 Advantages and Strengths Excellent performance in half bridge topology Excellent switching performance Typical Application Electronic Ballast / Lightings Switch Mode Power Supply Ordering Information Part Number Marking Package Packing Method FJD3305H1TM J3305H1 D-Pak Tape & Reel FJD A

Download ppt "New 700/400V, 4A Bipolar Transistor in DPAK"

Similar presentations

EC 2208 – Electronic Circuits Lab 1

EC 2208 – Electronic Circuits Lab 1
ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR.

ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR.
Chapter 13 : Bipolar Junction Transistors 13-0 Introduction 13-1 Current and voltage relationships 13-2 Common –emitter characteristics 13-3 Load –line.

Chapter 13 : Bipolar Junction Transistors 13-0 Introduction 13-1 Current and voltage relationships 13-2 Common –emitter characteristics 13-3 Load –line.
Chapter 3: Bipolar Junction Transistors

Chapter 3: Bipolar Junction Transistors
Basic Electronics Dr. Imtiaz Hussain Assistant Professor Mehran University of Engineering & Technology Jamshoro

Basic Electronics Dr. Imtiaz Hussain Assistant Professor Mehran University of Engineering & Technology Jamshoro
Chapter 28 Basic Transistor Theory. 2 Transistor Construction Bipolar Junction Transistor (BJT) –3 layers of doped semiconductor –2 p-n junctions –Layers.

Chapter 28 Basic Transistor Theory. 2 Transistor Construction Bipolar Junction Transistor (BJT) –3 layers of doped semiconductor –2 p-n junctions –Layers.
Bipolar Junction Transistors (BJT) 8/25/2015www.noteshit.com1.

Bipolar Junction Transistors (BJT) 8/25/2015www.noteshit.com1.
Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.

Module 2 Bipolar Junction Transistor. Learning Outcomes 1.The 3 terminals or regions of a BJT. 2.Construction and symbol of NPN and PNP types 3.Low power.
The Bipolar Junction Transistor (BJT)

The Bipolar Junction Transistor (BJT)
Bipolar Transistor Review

Bipolar Transistor Review
© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 5-1 Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

© 2013 The McGraw-Hill Companies, Inc. All rights reserved. McGraw-Hill 5-1 Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.
TRANSISTOR.  A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.  The transistor is the fundamental.

TRANSISTOR.  A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power.  The transistor is the fundamental.
Large Part Of This Lecture is Taken From Manipal Institute India

Large Part Of This Lecture is Taken From Manipal Institute India
1 © Unitec New Zealand DE4401 B IPOLAR J UNCTION T RANSISTOR BJT.

1 © Unitec New Zealand DE4401 B IPOLAR J UNCTION T RANSISTOR BJT.
Transistor (BJT). Introduction BJT (Bipolar Junction Transistor) Vaccum tubes It comes because it is most advantageous in amplification Why it is called.

Transistor (BJT). Introduction BJT (Bipolar Junction Transistor) Vaccum tubes It comes because it is most advantageous in amplification Why it is called.
Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 21.1 Example – see Example 21.2 from course text Determine the quiescent output.

Storey: Electrical & Electronic Systems © Pearson Education Limited 2004 OHT 21.1 Example – see Example 21.2 from course text Determine the quiescent output.
EMT 112 / 4 ANALOGUE ELECTRONICS Self-Reading Power Transistor – BJT & MOSFET.

EMT 112 / 4 ANALOGUE ELECTRONICS Self-Reading Power Transistor – BJT & MOSFET.
SPEED CONTROL OF DC SHUNT MOTOR USING MICROCONTROLLER PRESANT BY: Prajapati Pankaj R. (026) : Thakor Hitendra B. (020) : Thakor Kiran B. (021) : Senma.

SPEED CONTROL OF DC SHUNT MOTOR USING MICROCONTROLLER PRESANT BY: Prajapati Pankaj R. (026) : Thakor Hitendra B. (020) : Thakor Kiran B. (021) : Senma.
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 8.

COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 8.
Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.

Regions of a Transistor A Bipolar Junction Transistor is a three terminal device containing 3 regions: Emitter, Base and Collector.

Similar presentations

Ads by Google