1. by Yi Zhao CMPE640 ITRS presentation Fall 2005
Interconnects
by Yi Zhao
CMPE640 ITRS presentation
Fall 2005

2. Table Of Content Update of Changes Difficulties and Challenges
Examples
Questions

3. 2004 Update Highlights Minor changes since 2003 Changes
Clarification on what is meant by metal1
New metrics’
Resistivity of copper
Mean free path of charge carriers
Portion of electron secularly reflected from the wall

4. 2004 Update Highlights (cont.)
Minor DRAM changes (via and contact resistivity). This issue is a RED priority.
Interconnect roadmap is seen as “red bricks” issue by the end of this decade.

5. Difficulty/Challenges (>45nm) through 2009
Material to meet conductivity and dielectric permittivity requirements*
Manufacturability challenges*
Reliability challenges
3D control issues
Manufacturability and defect management

6. Difficulty/Challenges (<45nm) beyond 2009
Mitigate effects of size when it comes to interconnect structures
3D control issues
Patterning, cleaning, filling issures
Integration of new processes, interconnects for emerging devices
Solutions which address global wiring scaling issues*

7. Example Year 2003 2004 2005 2006 2007 2008 2009 Tech node hp90 hp65
DRAM
½ pitch (nm)
100 90 80 70 65 57 50

8. Questions