1. Fairchild Solutions for Welding Machine
IPST, High Voltage, PCIA
Nov. 2013

2. Welder System Block Diagram
1-phase and 3-Phase welding machine
Inverter Part
2nd rectifier Diode
- High power welding machine(Output current over 250 A)
- High switching welding machine over 40 KHz(1-phase), under 40 KHz(3-phase)
- PFC block option(only export model)
- Using Full-bridge, Half-bridge, Phase shift full bridge topology
Power Switches
Diode
Inverter block (one-phase)
- SFD of Gen1 IGBT, SMD of Gen2 IGBT(High speed IGBT)
Inverter block (three-phase)
V and 1200 V IGBT(High speed IGBT)
2nd rectifier block
- Reverse Recovery Speed
- Low Vf
- Softness factor

3. Welder System Block Diagram
1-phase and 3-Phase welding machine(AP)
Inverter
2nd rectifier
Full-bridge topology
High switching welding machine
[1-phase over 40 KHz, 3-phase under 40 KHz]
Optional PFC block
Power Switches(Inverter)
FRD(2nd. Rectifier)
1-phase: High speed IGBT
3-phase: Low Vce(sat) 1000,1200 V IGBT
- Fast Trr
- Low Vf
- Softness factor
1-phase welding machine(EU)
PFC
Inverter
2nd rectifier
- 2SW-forward topology
- High switching welding machine over 40 KHz
- IMS substrate module using D2-PAK
- PFC mandatory (HA / Home line power)
Power Switches(PFC / Inverter)
Diode(Inverter / 2nd. Rectifier
High speed IGBT
Co-pak diode is not needed
- Fast Trr
- Low Vf
- Softness factor

4. Welding Machine Waveform and Switching Loss
@ Output Current : 320 A, Single IGBT, Full-bridge
Low side Vge : 7 V/div
low side Ic : 20 A/div
Low side Vce : 100V/div
10 us/div
High side Vge : 7 V/div
Vge : 7 V/div
Ic : 10 A/div
Vce : 100 V/div
200ns/div
Eoff=1.989 mJ
Turn-off loss
The biggest portion of loss
Diode forward loss
Turn-on loss
Vge : 7 V/div
Ic : 20 A/div
Vce : 100 V/div
500 ns/div
EVf =229 uJ
Vge : 7 V/div
Ic : 10 A/div
Vce : 100 V/div
500 ns/div
Eon=410 uJ

5. Fairchild IGBT Technology
Field Stop IGBT
Thin IGBT Wafer
Features & Performance
Low conduction and switching loss
Positive temperature coefficient for easy parallel operation
Maximum junction temperature : Tj=175degC
High current capability
Tight parameter distribution
Large SOA (Safe Operating Area)
P+ sub n-
P - base n+
emitter
collector
gate PT x E
FS Planar n WF
thickness
300 um
200 um
100 um
PT IGBT
NPT IGBT
FS IGBT
P – base
p++
FS Trench
P-collector
NPT
IGBT Technology
PT ; Punch-Through
NPT ; Non Punch-Through
FS ; Field Stop
Voltage Rating Distribution by Tech.

6. IGBTs Ordering Information
F G A 30 N 65 S M D
Built-in Diode
Blank : Without Diode / D : Built-in Diode
Generation
F/FT : Gen1 / M : Gen2 / P : Gen3
Speed & Feature
S : SMPS / U : Ultrafast
L : Low VCE(sat)
Voltage Rating ( ⅹ10)
Technology
N : Planar process
T : Trench process (cf V Gen1 : N)
Current Rating
Package Type
H : TO-247 / A : TO-3PN
L : TO-264 / Y : Power247
D : D-PAK / B : D2-PAK
P : TO-220 / PF : TO-220F
IGBT
Fairchild Semiconductor

7. Package Update : TO247 Long Leads
Requirement: 20 mm lead length
The difference between existing TO247 and TO247 long leads is only lead length(L)
TO247; lead length(L) 16 mm
TO247 long leads; lead length(L) 20 mm

8. 600/650 V IGBT in Single Phase Welder

9. 600/650 V Field-Stop IGBT Summary
Lower Conduction Loss
Lower Switching Loss
FS Planar Gen. 1 IGBT
UF or UFD
SF or SFD
Fsw : 16 – 20 kHz, VCE(SAT) = 1.9 V
Low conduction loss
Fsw : 20 – 60 kHz, VCE(SAT)= 2.3 V
Lower switching losses
FS Planar Gen. 2 IGBT
SMD
Fsw : 20 – 60 kHz, VCE(SAT)= 1.9 V
20% lower Vce(sat) & Switching loss than 1st generation FS IGBT
Enhanced Reliability to guarantee Tjmax at 175degC
FS Trench IGBT
UPD
Fsw : 16 – 20 kHz, VCE(SAT) = 1.65 V
Short-Circuit Guaranteed (SCWT > 5 25degC)
Higher Breakdown Voltage(650V) for increasing customer needs
FS Trench Gen.2 IGBT
SPD
Fs : 20 – 60 kHz, VCE(SAT)= 1.8 V
lowest Vce(sat) & Switching loss trade-off IGBT
Ultra thin wafer tech. for lower Vce(sat) with high switching speed

10. 600 V & 650 V Field Stop IGBT Line-Up
-UFD: Low Vce(sat) IGBT
Part No.
Vces
[V] Ic
@100oC[A]
Vce(sat) Typ.
Eoff Typ.
[μJ/A]
PKG
FGH/P20N60UFD
600 20
1.8 13
TO220 / TO247
FGH40N60UF/UFD 40 12
TO247
FGH/A60N60UFD 60
1.9 14
TO247/ TO3PN
FGH75N60UF 75 18
FGH40N65UFD
650
-SFD/SMD: High Speed IGBT
Part No.
Vces
[V] Ic
@100oC[A]
Vce(sat) Typ.
Eoff Typ.
[μJ/A]
PKG
FGH/B20N60SFD
600 20
2.2 8
TO247 / D2PAK
FGH40N60SF/SFD 40
2.3
TO247
FGH60N60SF/SFD 60 11
FGH75N60SF 75 13
FGB40N60SM
1.9
6.5
D2PAK
FGH40N60SMD
FGH60N60SMD
7.5
FGY75N60SMD 10
Power247
FGA30N65SMD
650 30
TO3PN
FGA40N65SMD
FGA60N65SMD

11. 650 V Field Stop Trench IGBT Line-Up
-UPD: Low Vce(sat) IGBT
Part No.
Vces
[V] Ic
@100oC[A]
Vce(sat) Typ.
Eoff Typ.
[μJ/A]
PKG
Sample
Plan
Release
FGH30T65UPDT_F155*
650 30
1.65 17
TO247LL*
Available
Released
FGH40T65UPD 40
TO247
FGH50T65UPD 50
FGH75T65UPD 75
* suffix T: full co-pak diode current
-SPD: High Speed IGBT
Part No.
Vces
[V] Ic
@100oC[A]
Vce(sat) Typ.
Eoff Typ.
[μJ/A]
PKG
Sample
Plan
Release
FGH40T65SPD_F155
650 40
1.8
7.0
TO247LL*
Available
Released
* TO247LL: TO247 long lead(20mm) 11

12. 650 V 30 A IGBT in Single Phase Welder

13. Single Phase IGBT Welder (ZX7-250)
Main block diagram
Transformer ratio : 4.5:1
IGBT gate driver

14. IGBT Welding Machine Temperature Test
IGBT welding machine temperature test results(single IGBT test)
output 24.8 V, 120 A(IGBT current =27 A) and 26.4 V 160 A(IGBT current =35 A) test 1 2 3 5 6 4
Competitor
Competitor
Competitor
Airflow
Competitor
Test condition : input voltage : 210 Vac, 60 Hz.
Fsw=30 KHz, test time : 30 min. transformer ration : 4.5:1
Competitor
Competitor
Competitor
Competitor
Competitor

15. IGBT Welding Machine Temperature Test
IGBT welding machine temperature test results(Parallel IGBT test)
output 28.0 V, 200 A(Per IGBT current =23 A)
Test condition : input voltage : 210 Vac, 60 Hz.
Fsw=30 KHz, test time : 30 min. transformer ration : 4.5:1 8 7 6 5 1 2 3 4 9
Airflow 10
Competitor
Competitor
Competitor
Competitor

16. 1200/1000 V IGBT in Three Phase Welder

17. 1000 V / 1200 V IGBT Line-Up -NPT IGBT: Robust IGBT
Product ID
Bvces [V]
[A]
Vce(sat) [V]
Eoff Typ. [uJ/A]
PKG
Remark
Code S
FGL60N100BNTD
1000 42
2.5 35
TO264
hard switching / NPT
Released
FGL40N120AND
1200 40
2.6 27
* TO247LL: TO247 long lead(20 mm)
-Filed Stop Trench IGBT: Low Vce(sat) & Low Eoff
Product ID
Bvces [V]
[A]
Vce(sat) [V]
Eoff Typ. [uJ/A]
PKG
Sample Plan
Code S
FGH40T100SMD
1000 40
1.9 27
TO247
Available
Released
FGH40T120SMD
1200
1.8
FGH40T120SMD_F155
TO247LL*
FGH25T120SMD_F155 25
FGH15T120SMD_F155 15
* SA IGBT for PFC (App. not using diode)

18. IGBT BOM for Three Phase Welder
ZX7-250 model : FGH15T120SMD_F155 X 2pcs parallel , Full-bridge
 Simulation current : 33 A, per devices current : 17 A ( *Transformer turn ratio : 7.5 : 1).
 Test current : : 37.6 A, current per 1 IGBT: 18.8 A
ZX7-320 model : FGH25T120SMD_F155 X 2pcs parallel , Full-bridge
 Total current : 43 A, per devices current : 22 A ( *Transformer turn ratio : 7.5 : 1)
 Test current : : 47.2 A, current per 1 IGBT: 23.6 A
ZX7-400 model : FGH40T120SMD_F155 X 2pcs parallel , Full-bridge
 Total current : 54 A, per devices current : 27 A ( *Transformer turn ratio : 7.5 : 1)
 Test current : : 58.4 A, current per 1 IGBT: 29.2 A
ZD11
18V
ZD12 T9 2 6 9 7 10 4 G1
E1,E2
R35
4.7K
R36 G2
ZD13
ZD14
R39 20 D7
R40
R41
R42 D8
R44
R43
R45 D9
R46
D10
R47
R48
C114
16uF
C110 V
R111 10 T5
TRANSFORMER 42:5 1 5 6 4 8
C109
D56
DIODE L1
50uH
D57 Q3
FGH150T120SMD
C107
103 1KV
R112
C106
C108
R102
5W 10k
CT1
JF3250G 3 2 Q1
FGH15T120SMD
R101 R E1 G3 G1
Output(-)
Output(+) E3 Q2
D58
D59
D60
D61
D62
D63 Q4 S T
C102
C113
70uF/700V G4 G2 E4 E2

19. FGH15T120SMD Performance Comparison

20. 250 A Welder Model Temperature Test
Temperature results
CH1~CH2: High side IGBT
CH3~CH4 : Low side IGBT
CH5 : Thermal sensor
CH6 : Tc 1 3 4 6 2 5
Welding machine condition :
- Half-bridge, Output : 25.6 V ,140 A, test time : 30min.
- Total current : 37.6 A(per devices current :18.8 A)
- Switching frequency : 15 KHz(Duty ratio : 27.9%)
(Turn on: 18.6 uS, Deadtime : 14.4 uS)
Gate resistor value :
Ron = 20 ohm
Roff = 7 ohm
25.6V, 140A
CH1
CH2
CH3
CH4
CH5
CH6
Average-Tc
high side
Low side HS Tc
FGH15T120SMD
49.1
47.7
51.0
47.9
31.1
25.4
23.0
24.1
5.7
FGA25N120ANTD
61.1
58.5
59.4
55.7
32.5
34.4
32.2
7.1
Competitor
52.0
53.3
52.4
51.3
30.5
24.8
27.9
27.1

21. FGH25T120SMD Performance Comparison

22. 320 A Welder Model Temperature Test
Temperature results
CH1~CH2: High side IGBT
CH3~CH4 : Low side IGBT
CH5 : Thermal sensor
CH6 : Tc 1 3 4 6 2 5
Welding machine condition :
- Half-bridge, Output : 27.2 V ,180 A, test time : 30 Min.
- Total current : 47.2 A(per devices current :23.6 A)
- Switching frequency : 15 KHz(Duty ratio : 24.3%)
(Turn on: 16.2 uS, Deadtime : 17.2 uS)
Gate resistor value :
Ron = 20 ohm
Roff = 7 ohm
27.6V, 180A
CH1
CH2
CH3
CH4
CH5
CH6
Average-Tc
high side
Low side HS Tc
FGH25T120SMD
56.7
56.6
60.1
54.4
33.6
26.2
30.5
31.1
7.4
Competitor
62.9
61.5
64.4
59.7
34.9
26.5
35.7
35.6
8.4
Competitor
63.1
61.3
62.0
60.7
34.0
7.5

23. FGH40T120SMD Performance Comparison

24. FGH40T120SMD Vce(sat) IGBT Vce(sat) comparison @Vge=15 V
H series
I-V Tc=25deg.C
I-V charac Tc=100deg.C
H series
H series

25. FGH40T120SMD Switching Loss
Turn-off switching loss
H series
* Test condition : Vcc=600 V, Vge=+15 V, Rg=10 ohm, Inductive load, Freewheeling SIC diode.
H series

26. 320 A Welder Model Temperature Test
Driver Circuit and welding machine diagram(Full-bridge topology)
Picture of Welding machine
Temperature Test Results
CH1 : High side IGBT1
CH2 : High side IGBT2
CH3 : Low side GBT3
CH4 : Low side GBT4
CH5 : Thermal sensor
CH6 : Ta
H series 5 3 1 4 2
H series
*Test condition
 input voltage : 380 Vac 3-phase 60 Hz, test time : 30 min,
Transformer ratio : 8.5:1 duty : 38%, Fsw=20 KHz
Airflow 6

27. 400A Welder Model Temperature Test
Welding machine diagram(Half-bridge topology)
C114
16uF
C110 V
R111 10 T5
TRANSFORMER 42:5 1 5 6 4 8
C109
D56
DIODE L1
50uH
D57 Q3
FGH40T120SMD
C107
103 1KV
R112
C106
C108
R102
5W 10k
CT1
JF3250G 3 2 Q1
R101 R E1 G3 G1
Output(-)
Output(+) E3 Q2
D58
D59
D60
D61
D62
D63 Q4 S T
C102
C113
70uF/700V G4 G2 E4 E2
Welding machine Picture
IGBT driver condition
CH1~CH4 : High side IGBT
CH5~CH8 : Low side IGBT
CH9 : Tc
Type A
AP welder 5 1 2 6
Type B
AP UPS 7 3
*Test condition
 input voltage : 380 Vac 3-phase 60 Hz, test time : 30 min,
Transformer ratio : 4.5:1, duty : 44%, Fsw=15 KHz 8 4 9
Airflow

28. 400 A Welder Model Temperature Test
Output load : 220 A, IGBT 2PCS-parallel (IGBT current will be the same as Full-bridge 400 A model)
H series
H series
Output load : 300 A, IGBT 3PCS-parallel (IGBT current will be the same as Full-bridge 500 A model)
H series
H series

29. 400 A Welder Model Temperature Test
output load : 400 A, IGBT 4PCS-parallel(IGBT current will be the same as Full-bridge 600 A model)
H series
H series

30. FGH40T100SMD Performance Comparison (Full-bridge Inverter)

31. FGH40T100SMD Trade-off (Eoff vs. Vce(sat))
Trade-off Tc=25deg.C
Trade-off Tc=125deg.C
H series
T series
R series

32. FGH40T100SMD Eoff vs. Ic Eoff vs. Ic comparison @ Tc=25deg.C
H series
H series
T series
T series
R series
R series

33. Performance comparison : Detail power loss
@ DC-Welding machine Po=14.4 KW(36 Vdc, 400 A)
Pd by Switching Freq(per device)
H series
T series
R series
H series
T series
R series
* Condition for calculation:
- Topology: High-frequency switch for Full-bridge Inverter with Po=14.4 KW
- Input voltage: 3-phase 380 V, Output current and voltage: 400 A, 36 Vdc
- Transformer turn ratio : 8.5:1, IGBT : 2PCS Parallel, Duty : 0.36, Fsw:20 KHz, Tc:80℃
- Eon(total loss 10%) used in calculation is measured with co-pak diode
H series
T series
R series

34. Fast Recovery Diode Ultrafast, Hyperfast, Stealth™ Diode

35. Diode Product Portfolio
Car booster &
Adopter
Display
(C-TV/MNT/PDP)
PFC
Freewheeling
Market
Power supply
Output rectifier
Key
parameters
Low VF
( < 1.5 V )
Fast trr
( < 100 ns )
( < 35ns )
( < 30 ns )
Soft recovery
( S- factor)
High performance
Welding/UPS
IGBT module
UIS rated
( < 35 ns )
UIS
(1J <)
Remark
Under Plan
UltraFast
HyperFast
StealthTM Diode
PV inverter/ UPS

36. Reverse Recovery Performance @ 600 V, 8 A

37. 300 V – 400 V FRD Tech. FSID VRRM IF (AV) VF max trr max Package
Configuration
(V)
(ns)
Ultrafast
FFPF10UP30ST
300 10
1.4 45
TO220F
Single
FFPF10UP30S
FFPF20UP30DN
1.3
Common Cathode
FFPF20UP30S 20
1.5 30
FFB20UP30DN
D2PAK
FFA60UP30DN 55
TO3PN
FFA40UP35S
350 40
1.6 53
FFH60UP40S/S3
400 60 85
TO247
Single/

38. 600 V FRD (1) Tech. FSID VRRM IF (AV) IFSM VF max trr max
IRM or IR max
Package
Config.
(V)
(A)
(ns)
(µA)
UltraFast
RURP860
600 8
100
1.5 70
TO220 
Single
RUR1S1560S9A 15
200 60
D2PAK
RURP1560
FEP16JT 16 50 10
TO220AB 
C. Cathode
FEP16JTA
C. Anode
FEP16JTD
Series
RURP3060 30
325
250
RURG3060
TO247 
RURG3060CC
RURG5060
500
1.6 75
FFH60UP60S/S3
1.7 80
Single/ C. Cathode
RURG8060
800 85
UltraFast II
FFPF20UA60DN
2.3
120
TO220F
FFPF10UA60ST
FFA60UA60DN
180
2.2 90
TO3P 
FFAF60UA60DN
TO3PF 
FFPF30UA60S

39. 600 V FRD (2) Tech. FSID Package Config. Hyper Fast Hyper Fast II
VRRM
IF (AV)
IFSM
VF max
trr typ
IRM or IR max
Package
Config.
(V)
(A)
(ns)
(µA)
Hyper Fast
RHRP1560
600 15
200
2.1 40
100
TO220
Single
RHRG1560CC
1.5 60
TO247
C. Cathode
RHRP3060 30
325 45
RHRG3060
RHRG3060CC
RHRG5060 50
500
250
Hyper Fast II
FFP04H60S 4 33
FFPF04H60S
TO220F 
FFP08H60S 8 34
FFPF08H60S
FFPF10H60S 10
2.5 35
FFH75H60S 75
750
2.2
StealthTM Diode
ISL9K460P3
2.4 22
TO220 
ISL9R460PF2
ISL9R860P2
FFPF60SA60DS 80 25
Series
ISL9R860PF2
ISL9R860S3S
D2PAK 
ISL9R1560P2
ISL9R1560PF2
ISL9K1560G3
TO247 
ISL9R1560G2
ISL9R1560S3S
ISL9R3060P2
ISL9K3060G3
ISL9R3060G2
StealthTM II Diode
FFP/PF04S60S
2.6 23
TO220/F
FFP/PF08S60SN
3.4
FFP/PF08S60S
FFP/PF/H15S60S
150
TO220/F / TO247
FFP/H30S60S
300
TO220/ TO247
Deuxpeed
FFP08D60L2
3.6

40. 1200 V FRD Tech. FSID VRRM IF (AV) IFSM VF max trr max IRM or IR max
Package
Config.
(V)
(A)
(ns)
(µA)
Hyper Fast
RHRP8120
1200 8
100
3.2 70
TO220
Single
RHRP15120 15
200 75
RHRG30120 30
300
TO247
RHRP30120 3
250
RHRG75120
500
StealthTM Diode
ISL9R8120S3S
3.3 44
D2PAK 
ISL9R8120P2
TO220 
ISL9R18120S3S 18
ISL9R18120G2
TO247 
ISL9R30120G2
325

41. twitter.com/fairchildSemi