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Theory-VASP and simple tight binding
Electron poor materials research group Group meeting Sept. 08, 2010 Theory-VASP and simple tight binding
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GaAs Comparison Cardona, Phys. Rev. B 38, 1806–1827 (1988)
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GaAs Comparison Richard, PHYSICAL REVIEW B 70, 235204 (2004)
k.p method. matching to “band gaps” at certain k-points
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GaAs Comparison Elabsy, Physica B 405 (2010) 3709–3713
pressure coupled psuedo-potential.
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InSb Comparison Gang Zhu, Semicond. Sci. Technol. 23 025009 (2008)
emperical psuedo potential
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InSb Comparison Mohammad, J Mater Sci 43:2935–2946 (2008)
WIEN2k. augmented plain wave and local orbital
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ZnSe Comparison Cui, Journal of Alloys and Compounds 472 (2009) 294–298 plane wave, US and GGA
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ZnTe Comparison Khenata,Computational Materials Science –38 (2006) WIEN2k, augmented plane wave with local orbitals
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Compound Properties currently all calculated with LDA
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Tight Binding according to Harris
Tight Binding according to Harris. Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
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Tight Binding according to Harris
Tight Binding according to Harris. Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
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Tight Binding according to Harris
Tight Binding according to Harris. Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
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Tight Binding according to Harris
Tight Binding according to Harris. Electronic Structure and the Properties of Solids, Harris 1980 Tight Binding on the LEFT VASP USING LDA ON THE RIGHT
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