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First results Plasma etching
Ari D. Palczewski, SRF Scientists Jefferson Lab, USA 11/12/2015 Plasma etch performed by Janardan Upadhyay – ODU Chemistry performed by staff w/ help from Anne-Marie Valente-Feliciano
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Plasma etching – Ar/Cl2 Plasma
Single cell cavity with electrode and conical gas flow inlet J.Upadhyay et al., Phys. Rev. ST Accel. Beams.17,122001(2014). – system setup and sample results
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First results – residual very high
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First results 120C bake – no change
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SEM results residual powder
Chromium and iron found – suspect stainless steel contamination From etched cone contaminating surface
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HF free Chemical etch Aqua Regia and Phosphoric rinse
Aqua Regia (3 part HCl, 1 part HNO3) – ambient 60 minute plus flip 60 minutes 85% Phosphoric rinse - 100C 60 minutes Rough surface, but was there before etch – inherent in plasma from parameters used
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RF after chem w/ 120C Possible small change from 120C but not dominant
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Surface resistance fitting
R=RS+A/T+e^(U/T) U=17.02 Rough surface cause slope, not hydrogen – possible contamination left
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Compare to BCP Next step HF rinse
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