1. Student Design Competition

2. 1st 6 Inch GaN line in Europe Former Philips Semiconductor division
Created in 2000
Acquired by YFEN in 2010
Over 40 years of experience in III-V semiconductors, including GaAs and InP
Unique GaN Process best suited for upcoming 5G
Only foundry in Europe offering complete service including Epitaxial Growth, Process Development, MMIC Design & Fabrication, Test & Product Qualification
6 Inch GaN line in Europe
Confidential Property of OMMIC, may not be copied, disseminated or transferred without the expressed written approval of OMMIC © OMMIC S.A. 2019

3. OMMIC PROCESSES ED02AH GaAs pHEMT Process for Competition GaN D006GH
Frequency of Main Applications (GHz)
GaN
D006GH
GaN/Si HEMT
Dev
Process for Competition
D01GH
GaN/Si HEMT
High In
D004IH
GaAs w/ In mHEMT
Dev
D007IH
GaAs w/ In mHEMT
D01MH GaAs mHEMT
D01PH GaAs pHEMT
GaAs
: Space Qualified process
: On-going Space Qualification (2020)
ED02AH GaAs pHEMT
D25PHS
GaAs pHEMT
InP
D15IB HBT
Dev
Confidential Property of OMMIC, may not be copied, disseminated or transferred without the expressed written approval of OMMIC
© OMMIC S.A. 2019

4. D01GH GaN/Si fmax : 180 GHz ft : 100 GHz
100 nm Gate
fmax : 180 GHz ft : 100 GHz
Gate length: 100 nm Vbgd : 40 V
D01GH FEATURE
30 GHz : 3.5 W/mm PAE : 48%
PRELIMINARY ON-WAFER MEASUREMENTS
AlGaN/GaN/Si
High Linearity Mixers
High frequency PA 15 GHz to 50 GHz
Instrumentation wide band amplifier DC - 50 GHz
Robust LNA (< 40 GHz) : up to 35dBm Pin CW for
MAIN APPLICATIONS

5. Title: YFEN CUP Frequency: 1-40GHz Gain: 15dB(±1.5dB) P1dB: 1W
PAE: %
VSWR:
Size: *2mm*mm
PAD: VG 1 VD
Process: D01GH( GaN on Si)

6. Schedule Application period : 6.22-7.12
Application information to
Name of the team
Name of the designer, Tel number and address
Name of the university and teacher
YFEN will send PDK after the NDA signed

7. P r i z e s ¥10000 to the 1st ¥5000 to the 2nd
¥3000 to the 3rd and 4th