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Fig. 1 A monolayer ReSe2 on a back-gated G/h-BN device.

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Presentation on theme: "Fig. 1 A monolayer ReSe2 on a back-gated G/h-BN device."— Presentation transcript:

1 Fig. 1 A monolayer ReSe2 on a back-gated G/h-BN device.
A monolayer ReSe2 on a back-gated G/h-BN device. (A) Schematic illustration of a back-gated ReSe2/graphene/h-BN device. (B) Top view of the atomic structure of monolayer ReSe2. The two lattice vectors (a and b) are outlined by red lines. The lattice constants are a = 6.6 Å and b = 6.7 Å. The angle between a and b is 118.9°. (C) A representative STM image of a monolayer ReSe2 flake on graphene/h-BN. Inset shows the STM line profile along the step edge. (D) Atomically resolved STM image of monolayer ReSe2. The STM image reveals the unique 1D chains consisting of diamond-shaped Re4 units along a direction (highlighted by orange line). The cross (X) marks the position where the differential conductance (dI/dV) spectra were taken. Zhizhan Qiu et al. Sci Adv 2019;5:eaaw2347 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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