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Fig. 5 In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres). In-plane angle dependence of SOT efficiency (θDL,m) and resonance.

Published byClaire Burns Modified over 5 years ago

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Presentation on theme: "Fig. 5 In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres). In-plane angle dependence of SOT efficiency (θDL,m) and resonance."— Presentation transcript:

1 Fig. 5 In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres).
In-plane angle dependence of SOT efficiency (θDL,m) and resonance condition (Hres). (A) Schematic illustration of device orientation. The blue rectangle illustrates that multiple devices are patterned from the same continuous film. (B, D, and F) Normalized θDL,m at 9 GHz of p-IrMn (22)/Py (13), L10-IrMn (22)/Py (13), and L10-IrMn (22)/Cu (0.5)/Py (13), respectively. (C, E, and G) Normalized resonant fields (Hres) at 9 GHz of devices in (B), (D), and (F) respectively. The angle refers to the orientation of the microstrip in the film plane relative to the [100] direction for L10-IrMn samples and an arbitrary axis for the p-IrMn sample. Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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