1. Device Technology for GaN Power Electronics
HSIC Seminar
Device Technology for GaN Power Electronics
Time： 10:00-12:00, 19/07/2013,Fri.
Location ：Millimerer-Wave ICS Lab
10F, Engineering Building
Speaker ： Prof. Kevin J. Chen
University of Science and Technology ,
Hong Kong
Host ：Prof. Hsien-Chin Chiu
Abstract
Wide-bandgap GaN-based semiconductor materials are attracting great attention as the preferred materials for next-generation high-efficiency electric power conversion systems, owning to their superior properties including high breakdown electric-field, high carrier density, high electron saturation velocity. GaN-based power devices can be operated at high voltage and high current levels with high switching frequencies, and their inherent high-temperature operating capability could lead to simplified low-cost cooling solutions.
In this talk, I would provide an update on the latest development in GaN device technology for obtaining power-electronics-relevant
characteristics including normally-off operation, large positive threshold voltage, large gate swing, small Vth-instability, and low current collapse.