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Fig. 4 Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn. Effect of Cu spacer and current direction on SOT efficiency (θDL,m)

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Presentation on theme: "Fig. 4 Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn. Effect of Cu spacer and current direction on SOT efficiency (θDL,m)"— Presentation transcript:

1 Fig. 4 Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn.
Effect of Cu spacer and current direction on SOT efficiency (θDL,m) in L10-IrMn. (A) Vmix (data point) and its fit (line) of L10-IrMn (22)/Cu (0, 0.5, 1)/Py (13) at 9 GHz. The voltage spectrum is scaled for a clearer comparison. (C) Vmix (data point) and its fit (line) of devices on L10-IrMn (22)/Py (13) at 9 GHz. The angle refers to the orientation of the microstrip in the film plane relative to the [100] direction of the L10-IrMn lattice. The insets of (A) and (C) show the extracted θDL,m. (B and D) Linear fit of linewidths against frequency for devices in (A) and (C), respectively. Inset shows the extracted damping constant (α). The plot of the 0° device is too scattered and is therefore replaced by the 67.5° device in (D). Jing Zhou et al. Sci Adv 2019;5:eaau6696 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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