1. Copyright © Infineon Technologies AG 2019. All rights reserved.
1200 V CoolSiC™ discrete devices
Nomenclature
Copyright © Infineon Technologies AG All rights reserved.

2. CoolSiC™ MOSFET discretesW
120 R 30 M1 H
Company
I = Infineon
R = RDS(on)
As a separator between voltage and RDS(on)1
Package type W = TO-247
Z = TO-247 4pin
BG = D2PAK 7pin
Device
M = MOSFET
NEW
RDS(on) [m]
Reliable grade
H: High gate voltage range
Blank: Industrial
Breakdown voltage
Divided by 10
120 = 1200 V
Series name (2 digits)
M1 = Generation 1
1) CoolSiC™ MOSFET are marked with the typical RDS(on) instead of nominal current.
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Copyright © Infineon Technologies AG All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.
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3. 1200 V CoolSiC™ G5 Schottky diodeX G
120 C5
(B)
Company
I = Infineon
Package type
H = TO220 R2L
M = DPAK R2L
W = TO247
WD = TO247 R2L
K = D2PAK R2L
G = Low thermal resistance
Breakdown voltage [V] /10
Device
D = Diode
NEW
NEW
Series name
5 = Generation 5
Continuous forward current
[A]
B = Common-cathode configuration
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Copyright © Infineon Technologies AG All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.
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4. Copyright © Infineon Technologies AG 2019. All rights reserved.
Copyright © Infineon Technologies AG All rights reserved.