1. Runyan Miao, Fang Lu, Dawei,Gong
High Voltage Termination Design and Optimization for CoolMOS by TCAD tools
Runyan Miao, Fang Lu, Dawei,Gong
Surface Physics Laboratory ( National Key Laboratory ), Fudan University, ASMC, Shanghai
Breakdown voltage is an important parameter for CoolMOS which has various applications as a power device . Field plate and deep trench is used to improve the avalanche breakdown characteristic of the termination of CoolMOS. With the help of TCAD tools, design and optimization of the termination is efficient and costless.
Simulation Results
Figure2. Termination structure: trench width=26um
Figure3. Electric field distribution of termination with different length of field plate
Figure1.Breakdown voltage of termination structure with different width of trench
Figure5. Electric potential distribution of deep trench termination with different length of field plate
Figure4. Current distribution of termination with different length of field plate
Conclusion
With the help of deep trench, the breakdown voltage of termination structure has been apparently increased to above 700 volts. And this deep trench termination filled with oxide matches the CoolMOS cell very well. Further more, the field plate improves the breakdown voltage which makes the termination achieve the breakdown voltage of 760 volts.