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Fig. 1 Schematic diagram of the atomic-level structure engineering of ZnxCo1−xO for high-rate intercalation pseudocapacitance applications. Schematic diagram.

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Presentation on theme: "Fig. 1 Schematic diagram of the atomic-level structure engineering of ZnxCo1−xO for high-rate intercalation pseudocapacitance applications. Schematic diagram."— Presentation transcript:

1 Fig. 1 Schematic diagram of the atomic-level structure engineering of ZnxCo1−xO for high-rate intercalation pseudocapacitance applications. Schematic diagram of the atomic-level structure engineering of ZnxCo1−xO for high-rate intercalation pseudocapacitance applications. Arrays of single-crystal ZnxCo1−xO nanorods (NRs) are in situ fabricated on a conductive substrate to ensure quick charge transportation. For every single ZnxCo1−xO NR, the uniform doping of Zn ions in the oxide host assures fast electrical conduction, while the creation of O vacancy–rich {111} nanofacets enables easy access of oxygen ions into the oxide host with a low energy barrier. Tao Ling et al. Sci Adv 2018;4:eaau6261 Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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