Presentation is loading. Please wait.

Presentation is loading. Please wait.

Fig. 2 Electrical properties of CNT array FETs and influence of postdeposition treatment on conductance. Electrical properties of CNT array FETs and influence.

Published byCory Marshall Modified over 5 years ago

Similar presentations

Presentation on theme: "Fig. 2 Electrical properties of CNT array FETs and influence of postdeposition treatment on conductance. Electrical properties of CNT array FETs and influence."— Presentation transcript:

1 Fig. 2 Electrical properties of CNT array FETs and influence of postdeposition treatment on conductance. Electrical properties of CNT array FETs and influence of postdeposition treatment on conductance. (A) IDS-VGS curves forward sweep for a representative “rinsed + annealed” FET with Lch = 100 nm where the open and filled symbols are plotted on linear and logarithmic scales, respectively. (B) IDS-VDS output curves for the same device as in (A). (C) Gon versus Lch obtained from CNT arrays that have undergone the three different postdeposition treatment conditions, fit to Eq. 1, with a sevenfold total increase in Gon resulting from the “rinsed + annealed” treatment. (D) gm versus Lch for each surface treatment fit to as a guide to the eye, with a threefold total increase in gm resulting from the “rinsed + annealed” treatment. Gerald J. Brady et al. Sci Adv 2016;2:e Copyright © 2016, The Authors

Download ppt "Fig. 2 Electrical properties of CNT array FETs and influence of postdeposition treatment on conductance. Electrical properties of CNT array FETs and influence."

Similar presentations

Nanowire Gate-All-Around (GAA) FETs

Nanowire Gate-All-Around (GAA) FETs
JFET Junction Field Effect Transistor.

JFET Junction Field Effect Transistor.
Fig. 2 Time-resolved THz reflectivity from MAPI after band-edge optical excitation. Time-resolved THz reflectivity from MAPI after band-edge optical excitation.

Fig. 2 Time-resolved THz reflectivity from MAPI after band-edge optical excitation. Time-resolved THz reflectivity from MAPI after band-edge optical excitation.
Fig. 2 Nonlinearities in a cavity-embedded perovskite single crystal.

Fig. 2 Nonlinearities in a cavity-embedded perovskite single crystal.
Fig. 5 In vivo MIP imaging of lipid and protein in C. elegans.

Fig. 5 In vivo MIP imaging of lipid and protein in C. elegans.
Fig. 3 Electrical characterization and TCAD simulations of 1D2D-FET.

Fig. 3 Electrical characterization and TCAD simulations of 1D2D-FET.
Fig. 2 Rydberg-EIT spectra without control pulse.

Fig. 2 Rydberg-EIT spectra without control pulse.
Fig. 2 Transport properties of a BP transistor at low temperature.

Fig. 2 Transport properties of a BP transistor at low temperature.
Fig. 4 Ballistic simulation of BP FETs.

Fig. 4 Ballistic simulation of BP FETs.
Fig. 2 CL-DMD modeling of FKBP.

Fig. 2 CL-DMD modeling of FKBP.
Fig. 3 Evolution of absorber with annealing.

Fig. 3 Evolution of absorber with annealing.
Fig. 1 Demographic shifts in knowledge producers.

Fig. 1 Demographic shifts in knowledge producers.
Fig. 4 Electrical properties and patterning of the stretchable PEDOT/STEC (STEC content is 45.5 wt % for all). Electrical properties and patterning of.

Fig. 4 Electrical properties and patterning of the stretchable PEDOT/STEC (STEC content is 45.5 wt % for all). Electrical properties and patterning of.
Fig. 3 The dielectric properties and microwave heating response of CNT-loaded PLA films are probed as a function of nanotube loading. The dielectric properties.

Fig. 3 The dielectric properties and microwave heating response of CNT-loaded PLA films are probed as a function of nanotube loading. The dielectric properties.
Origin of the asymmetry and determination of the critical angle

Origin of the asymmetry and determination of the critical angle
Fig. 3 Saturation velocity of BP FETs.

Fig. 3 Saturation velocity of BP FETs.
Tuning of the conductance plateau of device 1 and quantum dot model

Tuning of the conductance plateau of device 1 and quantum dot model
Fig. 3 ACID isosurfaces of the model complex 2′ separated into the π- and σ-contribution. ACID isosurfaces of the model complex 2′ separated into the π-

Fig. 3 ACID isosurfaces of the model complex 2′ separated into the π- and σ-contribution. ACID isosurfaces of the model complex 2′ separated into the π-
Fig. 2 Absorbance changes during reaction of the fully reduced ba3 CytcO with O2. Absorbance changes during reaction of the fully reduced ba3 CytcO with.

Fig. 2 Absorbance changes during reaction of the fully reduced ba3 CytcO with O2. Absorbance changes during reaction of the fully reduced ba3 CytcO with.
Fig. 5 Analytical performance of the wearable cortisol sensor.

Fig. 5 Analytical performance of the wearable cortisol sensor.

Similar presentations

Ads by Google