1. Fairchild Discrete Solutions for Lighting
November, 2013
Lighting Segment, Power Conversion PCIA

2. In taking receipt of this Material, recipient acknowledges
and agrees to maintain its confidentiality and use the
Material for the sole purpose of business endeavors with
Fairchild Semiconductor.  Sharing with 3rd parties is
prohibited.

3. Discrete Solutions HV MOSFET Technology 500/600 V MOSFETs
Planar MOSFETs – UniFET™ MOSFET
Super-Junction MOSFETs
– SuperFET® MOSFET, SupreMOS® MOSFET & SuperFET® II MOSFET
Fast recovery MOSFETs
– FRFET® I MOSFET & FRFET® II MOSFET
and UltraFRFET™ I MOSFET & UltraFRFET™ II MOSFET
100/150 V MOSFETs
Line-up of small & SMD packages
Trench MOSFET – PowerTrench® MOSFET & V in TO-220/F & D2-PAK
650-1,000 V MOSFETs ; line-up
V MOSFETs ; line-up
Fast Recovery Diodes ; 200/300/600 V
BoostPAK for DC-DC converter

4. High Voltage MOSFET Technologies
Fairchild has been providing both planar MOSFETs and super-junction MOSFETs
AFET
BFET
QFET® MOSFET
UniFETTM MOSFET
CFET 85mohm
UniFET™ II
MOSFET
SuperFET ® II
MOSFET
SuperFET® I MOSFET
● Planar
■ Super-Junction
SupreMOS ® MOSFET

5. 500 & 600 V Planar MOSFETs
UniFETTM II MOSFET ; comparison of FCS’5N50 series
Comparison of FCS’ 5N50 series from datasheet
FQPF5N50C
FDPF5N50
FDPF5N50NZ
Technology
CFET
UNIFETTM
MOSET
UNIFETTM II
MOSFET
BVdss
500 V Id
5.0 A
4.5 A
Rdson (max)
1.4 ohm
1.5 ohm
Vgs(th)
2 ~ 4 V
3 ~ 5 V
Qg (typ)
12 nC
11 nC
9 nC
trr (typ)
263 ns
300 ns
210 ns
Diode dv/dt immunity
4.5 V/ns
10 V/ns
Internal ESD diode
None
Exist
The strong point of UniFETTM II MOSFET
Lower Qg  reduce switching loss
Smaller trr & Irr  higher diode dv/dt immunity
 Improve system reliability in bridge circuit
Internal ESD diode b/w gate and source  improvement against surge voltage

6. 500 & 600 V Planar MOSFETs
UniFETTM II MOSFET benchmarking ; better gate charge
Qg [nC]
Qgs [nC]
Qgd [nC]
FDPF7N60NZ (UniFETTM II MOSFET)
14.6
2.8
5.6
FQPF8N60C (C-FET)
28.7
4.7
24.0
Company -S (1.2ohm)
17.7
5.4
4.2
1us/div
FQPF8N60C
FDPF7N60NZ
Company - S
The Qg of FDPF7N60NZ is lower than company S’ product.
Switching loss makes up the largest portion in total power loss especially at light and Medium Power.
In resonant applications, the body diode turns on prior to MOSFET channel. In this soft switching transition, there is no “miller effect”.
Therefore, the Qg in above equation simply becomes Qg-Qgd.
COMPANY CONFIDENTIAL

7. Test condition: Is=5A, di/dt=100A/us
500 & 600V Planar MOSFETs
UniFETTM II MOSFET benchmarking ; better body diode
Spec
DUTs
Trr[ns] at 25℃
Irr[A] at 25℃
Trr[ns] at 125℃
Irr[A] at 125℃
Test condition: Is=5A, di/dt=100A/us
FDPF5N60NZ(2.0ohm)
396.4
2.2
500.0
2.9
Company - S (3.6ohm)
645.4
801.1
3.1
Company -S (2.0ohm)
672.7
3.3
842.7
3.5
Company – S (1.6ohm)
700.0
3.7
851.1
4.0
Company - S (3.6ohm)
Company - S (2.0ohm)
Company - S (1.6ohm)
FDPF5N60NZ( 2.0ohm)
25℃
FDPF7N60NZ has better reverse recovery characteristics than company S’ product.
Small reverse recovery current improves
diode dv/dt immunity.
COMPANY CONFIDENTIAL

8. 500 & 600 V Planar MOSFETs
UniFETTM II MOSFET benchmarking ; better switching
20 ns/div
Id : 2 A/div
Eoff=3.17 uJ
Vds : 100 V/div
FDPF7N60NZ
Eoff=3.78 uJ
FQPF8N60C
Under Id=1 A, Vgs =15 V, Rg=10 ohm
The current of UniFETTM II MOSFET falls faster than CFET during turn off operation
Because of the lower Qg of UniFETTM II MOSFET
 UniFETTM II MOSFET has Lower Eoff
COMPANY CONFIDENTIAL

9. 500 & 600V Planar MOSFETs
UniFETTM II MOSFET advantages in LLC application
Reverse Recovery Waveforms
UniFETTM II MOSFET – Optimized body diode,
considering LLC application
. Smaller reverse recovery charge
. Stronger body diode ruggedness
Body Diode Ruggedness
F109 : new 3p – to247과 pin to pin이 되도록 함
Table. Critical Specification Comparison of DUTs
DUTs
Rds(on)Max
BVDss ID Qg
Trr
Qrr
dv/dt
UniFETTM II MOSFET
0.85
500 V
8 A
18 nC
160 ns
1.2 μC
10 V/ns
Competitor A
7.2 A
32 nC
238 ns
2.5 μC
4.5 V/ns
Competitor B
16 nC
1200 ns
10 μC -

10. 500 & 600 V Planar MOSFETs UniFETTM II MOSFET line-up
Product name
Package
BVDSS (V)
ID (A)
RDS(on) max (Ohm)
Qg (nC)
Samples
Release
Old PN being Replaced
FDPF3N50NZ
TO220F
500
3.0
2.50 8
Available
FQPF3N50C
FDD3N50NZ
DPAK
2.5
FQD3N50CTM
FDP/PF5N50NZ
TO220/F
4.5
1.50 9
FQP/PF5N50C
FDD5N50NZ
4.0
FQD5N50CTM
FDP/PF8N50NZ
8.0
0.85 14
FQP/PF9N50C
FDD8N50NZ
6.5
FDD6N50
FDP12N50NZ
TO220
11.5
0.52 25
FQP13N50C
FDPF12N50NZ
FQPF13N50C
FDP22N50N
22.0
0.21 49
FDPF4N60NZ
600 10
FQPF5N60C
FDD4N60NZ
3.5
FQD5N60C
FDP5N60NZ
2.00 11
FQP6N60C
FDPF5N60NZ
FQPF6N60C
FDD5N60NZ
FQD6N60C
FDP7N60NZ
1.25 13
FQP8N60C
FDPF7N60NZ
FQPF8N60C
FDD/U7N60NZ
D/IPAK
5.5
FCD4/5N60
FDP10N60NZ
10.0
0.75 27
FQP10N60C
FDPF10N60NZ
FQPF10N60C
FDP12N60NZ
12.0
0.65 30
FQP12N60C
FDPF12N60NZ
FQPF12N60C
FDPF17N60NT
17.0
0.34 48
* suffix : N – UniFET II MOSFET, Z – Internal ESD Diode

11. SuperFET® II MOSFET Technology Feature SupreFET ® II Family
600 V/ 650 V Super-Junction technology
Lower Output Capacitance (Eoss) for higher efficiency in light load conditions
Higher body diode ruggedness and smaller reverse recovery charge (Qrr) for delivering
better reliable system in resonant converter
SupreFET ® II Family
SuperFET ® II Series : Excellent Switching Performance
Target for SupreMOS® MOSFET
Faster switching speed can be achieve Maximize system efficiency
Lower dv/dt and di/dt than SupreMOS® MOSFETs
Enable PQFN88 package
SuperFET ® II - Easy Driving Series : Optimizing Switching Performance
Target for SuperFET® MOSFET
Built-in gate resistance and optimized Cgd
Easy to design due to controlled dv/dt and di/dt at high current
Reliable operation at abnormal conditions
- start-up, load transient and paralleled operation
Fast Recovery SuperFET ® II Series
Target for Fast recovery SuperFET® MOSFET / SupreMOS® MOSFET
Low Qrr and Trr of body diode
Higher Vth for lower switching losses in resonant topologies
Robust body diode
Reliable operation in resonant topologies
GATE
SOURCE
P-PILLAR
DRAIN

12. SuperFET® II MOSFET Product Features Design Benefits
Faster switching speed and Low FOM
Lower dv/dt than SupreMOS® MOSFET
Maximize system efficiency for high-end applications
Direct replace of SupreMOS® MOSFETs
Enable PQFN88 package
Enable Low profile design
650V for low RDS(on) range
Better Reliability for out door applications
Both Solar and SMPS higher voltage requirement
Reduced Qg and Eoss
Higher light load efficiency compared to SuperFET® MOSFET
Lower driving requirement
Wide Range of RDS(on)
Cover from several kilo watt high-end power to ten’s watt adaptors

13. SuperFET® II MOSFET – Easy Drive Series
Product Features
Design Benefits
Controlled dv/dt at high current
Optimize Gate Resistor(Integrated Rg)
Easy to design
Reduced Gate oscillation
Low EMI noise
Reliable operation at abnormal conditions ;
start-up, load transient, paralleled operation, etc.
Reduced reverse recovery charge(Qrr)
Improved body diode ruggedness
- Higher dv/dt & di/dt capability
Enable to use in some resonant bridge topologies
Higher system reliability
Reduced Qg and Eoss
Higher light load efficiency compared to SuperFET® MOSFET
Lower driving requirement
Wide Range of RDS(on)
Cover from several kilo watt high-end power to ten’s
watt adaptors

14. SuperFET® II MOSFET for Lighting
Power rating [W]
600V SJ MOS for better thermal performance
Lighting evolution
Super-Junction MOSFET for lighting…
PFC for high power ballast – sub 1 ohm of Rdson, TO-220 or isolated at PFC stage of high power ballast over 100 W
PFC or HB inverter for med power ballast – D-pak is preferred for small form factor and BOM cost
PFC for high power LED driver – same as high power ballast, outdoor & street lighting
Single stage PFC Flyback for med power LED driver – 800 V MOS is required to withstand voltage spike at switching
Main switch for low power LED driver – 600 V in D/I-pak for high thermal performance and power efficiency inside bulb and L-tube

15. SuperFET® II MOSFETs – Release Plan
　Technology
PRODUCT ID
Package
RDS(ON)
Release Plan
[mΩ] ES CS
code S
SuperFET® II
FCP104N60F
TO220 99
Released
Series
FCP190N60
199
FCPF190N60
TO220F
FCMT125N60
PQFN88
Q1’14
Q2’14
FCMT199N60
P12 ’13
FCMT299N60
299
FCP380N60
380
FCPF380N60
FCPF400N60
400
FCD600N60Z
DPAK
600
Released, ESD diode included
FCP600N60Z
FCPF600N60Z
FCD620N60ZF
620
Released, ESD diode included, FR FET®
FCU900N60Z
IPAK Short lead
900
FCD900N60Z
FCP190N60E
190
Easy Drive Series
FCPF190N60E
FCP260N60E
260
FCPF260N60E
FCP380N60E
FCPF380N60E
FCD380N60E

16. SuperFET® II MOSFET – Bench Test A
Discrete Benchmark
Part #
FCP380N60E
FCPF11N60
Comp. I – new
Comp. I - old
Tc=25℃
[v]
656
660
672
671
Tc=25℃
[mΩ]
363.0
372.5
384
324
Vgs(th)
[V]
3.2
3.7
3.3
3.1
f=1MHz
[Ω]
5.51
2.79
7.74
1.51
VDD=380V, ID=5A
[nC]
47.9
54.1
43.6
65.7
VDD=380V, ID=5A
6.53
8.75
5.04
6.75
VDD=380V, ID=5A
11.35
14.74
13.45
15.75
Qrr @ VDD=380V,
di/dt=300A/us, ID=5A
[uC]
2.934
3.623
3.275
3.688
trr @ VDD=380V,
[ns]
177.8
190.0
187.1
202.8

17. SuperFET® II MOSFET – Bench Test A
Gate charge characteristics
- Gate charge of FCPF380N60E is the second lowest
- Condition: VDD=380 V, ID= 5 A, VGS=10 V
Device
Qg[nC]
Qgs[nC]
Qgd[nC]
FCPF380N60E
47.9
6.53
11.35
FCPF11N60
54.1
8.75
14.74
Comp. I - new
43.6
5.04
13.45
Comp. I - old
65.7
6.75
15.75
[ Stored energy in output MHz ]

18. SuperFET® II MOSFET – Bench Test A
Reverse recovery of body diode
- Qrr and Trr of FCPF380N60E are the smallest
- Condition: ID= 10 A
Device
Qrr
trr ta tb
[uC]
[ns]
FCPF380N60E
4.950
228.8
152.2
76.6
FCPF11N60
5.942
242.6
170.4
72.2
Comp. I - new
5.399
240.9
153.8
87.1
Comp. I - old
256.6
164.9
91.7

19. SuperFET® II MOSFET – Bench Test A
Test board: CRM PFC for high power lighting application up to 120 W
Test condition : Vin=100 Vac, 60 Hz, Vout=391 V, Pout=120 W, Ron=47 Ω, Roff=6.8 Ω
[ Turn-off switching losses]
[ Efficiency comparison]
Output Power [W]
Output Power [W]

20. SuperFET® II MOSFET – Bench Test B
AC/DC characteristics
Company
Fairchild
COMP. S
Part ID
FDD5N60NZ
FCD900N60Z
SJ MOS No
Measurement Condition
Unit
Planar
Super-Junction DC
Vth
Id=250 uA V 4 3 BV
600
Rdson
Vgs=10 V, Id=2 A Ω
1.90
0.9
0.95 AC Qg
Vds=480 V, Vgs=10 V,
f=1 MHz pF 13
13.63
11.96
Qgd
4.45
4.35
5.30
Qgs
2.65
2.45
1.80

21. SuperFET® II MOSFET – Bench Test B
Test board : PSR for LED bulb, input = AC90 V, output = 17 W
Ambient temperature : 25℃, test time : 60 min, Measured point : top of D-pak
12’C difference
FDD5N60NZ, planar MOSFET on board for LED bulb originally
Two Super-Junction MOSFETs under test for thermal and electrical comparison

22. SuperFET® II MOSFET – Bench Test B
[ Efficiency comparison]
[Input Voltage]

23. SuperFET® II MOSFET – Bench Test C
Test board : L-tube for T8 replacement – SMPS integrated solution
FCD900N60Z
Items
Name/Value
Controller
FL7732_F116
Topology
Buck-Boost
System Power
21W
Output Voltage
70V
Output Current
0.3A
MOSFET (Rdson)
FCD900N60Z
0.9Ω max.
Dimensions: 284 (L)  17 (W)  10 (H) [mm]
Test Results Summary
- Efficiency: 90.25% ~ 92.7%
- THD: 12.9% ~ 22.06%
- PF: 0.95 ~ 0.99
- Startup time: 0.88 s [90 Vac]
- Temperature: < 60 C°[All components]
- CC deviation: ±4% [Max]
- Output Current Ripple: ±17.3%
Circuit schematic

24. SuperFET® II MOSFET – Bench Test C
[ System temperature ]
[ System efficiency ]
Vin: 90 Vac
Rectifier: 58.3C°
Line filter: 54.7C°
MOSFET: 55.1C°
Vin: 265 Vac
Rectifier: 58.4C°
Input Voltage
Input Power [W]
Output Current [A]
Output Voltage [V]
Output Power [W]
Efficiency
90 VAC [60 Hz]
23.03
0.290
71.56
20.78
90.23%
120 VAC [60 Hz]
23.62
0.303
71.72
21.70
91.88%
140 VAC [60 Hz]
23.78
0.306
71.71
21.97
92.40%
180 VAC [50 Hz]
23.31
71.54
21.68
92.99%
230 VAC [50 Hz]
23.08
0.300
71.42
21.43
92.83%
265 VAC [50 Hz]
0.295
71.27
21.05
92.42%
Line filter: 30.9C°
MOSFET: 54.7C°

25. SuperFET® II MOSFET – Bench Test C
[ EMI ]
Test Condition: LED load [70 V/300 mA]
[220 Vac: Conduction Live]
[110 Vac: Conduction Neutral]

26. SuperFET® II MOSFET – Bench Test D
Test board : L-tube for T8 replacement – SMPS integrated solution
[ Circuit schematic ]
FCD900N60Z
Dimensions: 295 (L)  18 (W)  10 (H) [mm]
[ System specification]
FCD900N60Z (0.82 ohm)
Items
Name/Value
Controller
FL7701
Topology
PFC-Buck
System Power
18.3 W
Output Voltage
40 V
Output Current
0.47 A
Tested
MOSFET (Rdson)
FCD900N60Z
Vs.
FQD2N60C
FQD2N60C (3.6 ohm)
Good solution at low AC mains!
[ Efficiency comparison]

27. Single Stage PFC Flyback converter
Why 800 V MOSFET for LED Lighting?
Single Stage PFC Flyback converter
Input voltage
Voltage stress on MOSFET follows input voltage added up with reflected output voltage
plus voltage spike from resonance between leakage inductance and parasitic inductance
VMOSFET(off) = Vin + NP/NS * Vo + Vvs
Input voltage
(Vac)
Turn ratio of
transformer
Output voltage
Voltage
overshoot
Ex) 265 Vac* *45 V V = 610 V
→ 610 V + 20% margin = 760 V
Trade-off between Vds and Vr

28. SuperFET® II MOSFET – 800 V Development
Objective: cost-competitive 800 V Super-Junction MOSFET with best
performance in class in line with 600/650 V SuperFET ® II MOSFETs
Product Features
Design Benefits
Low Rdson by Super Junction tech.
Make thermal design of system easier than
Planar MOSFET
Faster switching speed and Low FOM
Maximize system efficiency by decrease of
switching loss, esp. at Flyback converter
SMD package line-up; D-pak
Fit to small form factor; light weight of SMPS
Reduced Qg and Eoss
Higher light load efficiency
Lower driving requirement
Wide Range of RDS(on)
Cover various applications and power rating

29. 800 V SuperFET® II MOSFET Release Plan
Product name
Sample Available
Code "S" Target
Package
Rdson
Cross reference
FCPF400N80Z
(vehicle)
Available
Released
TO-220F
0.40
SPA11N80C3(0.45), STF11NM80(0.4)
FCH400N80Z
Q2 '14
Q3 '14
TO-247
SPW11N80C3(0.45), STW11NM80(0.4)
FCPF650N80Z
Q2 ’14
0.65
SPA08N80C3(0.65)  
FCPF900N80Z
Q3 ’14
0.90
SPA06N80C3(0.90) , STF7NM80(1.05) 
FCD900N80Z
Q4 '14
DPAK
SPD06N80C3(0.90)
FCPF1300N80Z
1.30
SPA04N80C3(1.3), FQPF8N80C(1.55)
FCD1300N80Z
SPD04N80C3(1.3)  
FCPF2400N80Z
2.40
SPA02N80C3(2.7), FQPF6N80C(2.5)
FCD2400N80Z
SPD02N80C3(2.7)  
FCPF4300N80Z
4.30
FQPF3N80C(4.8)
* Suffix Z: ESD diode inside ** Product proliferation after vehicle will be completed in 8inch fab

30. SuperFET® II MOSFET – Bench Test
Test board : 45 W Single Stage PFC Flyback converter from LED down light
Specification
Compared parameters
SuperFET® II MOSFET 1st ES
Comp I’ SJ MOS
FOM [RDS(ON)×QG]
14.3 Ω ·nC
25.2 Ω ·nC
RDS(ON)
270.6 mΩ
236.8 mΩ
VGS(th)
3 V Qg
51 nC
88 nC
ESR
0.9 Ω
1.2 Ω
400 V
4.96 μJ
6.96 μJ
Eff. 230 Vac
89.3%
89.0%
/ 230 Vac
47.9⁰C
50.8⁰C
4.96
Package
TO-220

31. Simplified Typical Application (Phase-Shifted Full Bridge Converter)
Fast Recovery MOSFETs
What is FRFET® MOSFET ?
FRFET® Technology
Power MOSFET design technology + Lifetime control process
 Fast Recovery Diode Built-in MOSFET
Application Used
Phase-shifted full bridge topologies (ZVS)
Half / Full bridge topologies (Hard Switching)
3-phase bridge topologies
Benefits of FRFET® Technology
Lower trr & Qrr enable to operate high operating frequency
 (over 250 KHz)
Increased Ruggedness characteristics in ZVS topology
 Increased Diode recovery dv/dt
Enhanced EMI characteristics due to soft recovery
Reduced losses in hard switching bridge topologies
 Low turn-on MOSFET switching losses & Parasitic diode switching losses
Simplified Typical Application
(Phase-Shifted Full Bridge Converter)

32. Fast Recovery MOSFETs Turn-on characteristic of FRFET® MOSFET Vds Ids
Turn on loss comparison
This waveform shows a difference between normal MOSFET and FRFET® MOSFET at turn-on with same load condition.
FRFET® MOSFET has almost half the area for power loss
compared with normal MOSFET.
The MOSFET with fast reverse recovery time can increase
system efficiency by reducing turn-on loss.
So, by using a FRFET® MOSFET instead of conventional
solution (MOSFET + FRD), customer can have cost saving.
Vds
Normal MOSFET
FRFET
Ids
Normal MOSFET
Energy : Vds * Ids
FRFET

33. Fast Recovery MOSFETs Trr comparison b/w FRFET® MOSFET & normal MOSFET
FDPF7N50
FRFET® MOSFET
FDPF7N50F
UltraFRFETTM MOSFET
FDPF7N50U

34. Fast Recovery MOSFETs Application of UltraFRFET™ MOSFET Normal MOSFET
(trr > 300 ns)
Driver
Ultra FRFETTM with
ultrafast trr
FDPF6/8/10N60ZU
FDPF5/7/10/12/16N50U
FDPF5/8N50NZU
Existing Half-Bridge Solution
New Half-Bridge Solution

35. Fast Recovery MOSFETs FRFET® MOSFET & FRFET ® II MOSFET Line-ups
Product name
PKG
BVDSS
ID [A]
RDS(ON) Max
Qg [nC]
trr [ns]
FDP18N20F
TO-220
200 18
0.145 20 80
FDPF18N20F
TO-220F
FDPF5N50F
500
4.5
1.55 11 65
FDD5N50F
D-PAK
3.5
FQPF5N50CF 5
FDPF7N50F 6
1.15 15 85
FDD6N50F
5.5
FQPF9N50CF 9
0.85 28
100
FDPF10N50F 95
FQPF10N50CF 10
0.61 43 50
FQPF11N50CF
0.55 90
FQP11N50CF
FDPF12N50F
11.5
0.7 21
134
FDB12N50F
D2-PAK
FQPF13N50CF 13
0.54
FDP/PF20N50F
TO-220/F
0.26
154
FDA20N50F
TO-3P 22
FDA24N50F 24
0.2
264
FDA28N50F
0.175
266
FQPF8N60CF
600
6.26
1.5 82
FQPF10N60CF
0.8 44
FCP11N60F
0.38 40
120
FCB20N60F
0.19 75
160
FDPF8N50NZF 7 1 14
FDD5N50NZF
3.7
1.75
FDPF5N50NZF
4.2
Suffix
: N – UniFETTM II MOSFET
F – FRFET® MOSFET
U – UltraFRFETTM MOSFET
Z – Internal ESD Diode

36. Fast Recovery MOSFETs
UltraFRFET™ MOSFET & UltraFRFET™ II MOSFET Line-ups
Product name
PKG
BVDSS
ID [A]
RDS(ON) Max
Qg [nC]
trr [ns]
FDPF16N50U
TO-220F
500 15
0.48 32 65
FDPF12N50U 10
0.8 21
FDB12N50U
D2-PAK
FDPF10N50U 8
1.05 18 44
FDPF7N50U 5
1.5
12.8 40
FDPF5N50U 4 2 11 36
FDD5N50U
D-PAK 3
FDPF6N60ZU
600
4.5
14.5
FDPF8N60ZU
6.5
1.35 20
FDPF10N60ZU 9 31 45
FDPF8N50NZU
1.2 14 35
FDPF5N50NZU 30
* Suffix : N – UniFETTM II MOSFET
F – FRFET® MOSFET
U – Ultra FRFETTM MOSFET
Z – Internal ESD Diode

37. 100/150 V MOSFETs SMD Packages ** Suffix : L – Logic level gate
Part Number
PKG
BVDSS
ID [A]
RDS(ON) Max
Qg [nC]
10 V
4.5 V
FDT3612
SOT-223
100
3.7
0.12 V 14
FQT7N10
1.7
0.35 -
5.8
FQT7N10L V
4.6
FDD86102
DPAK 36
0.024 V
13.4
FDD3672 44
0.028 V 24
FDD3670 34
0.032 V 57
FDD3860 42
0.036 22
FDD3680 25
0.046 V 38
FDD3690
0.064 V 28
FDD850N10L
15.7
0.075
12.3
FQD19N10
15.6
0.1 19
FQD19N10L V
FDD120AN15A0
150 V
11.2
HUF76609D3/S
D/IPAK 10
0.16
0.165 13
FQD13N10
0.18 12
FQD/U13N10L V
8.7
FQD7N10L
FDD2572 29
0.054 V 26
FDD2582 21
0.066 V
FQD5N15
4.3
0.8
5.4
** Suffix : L – Logic level gate

38. with thick oxide at the bottom
100/150 V MOSFETs
PowerTrench® MOSFET; enable a drastic reduction of FOM
Conventional
Trench Gate MOSFET
Trench MOSFET
with thick oxide at the bottom
The latest
PowerTrench® MOSFET
Higher Cell density
Charge Balance technology
Reduces Epi Resistance

39. 100/150 V MOSFETs PowerTrench® MOSFET; improved efficiency
Shielded Gate Trench Technology (40 V~200 V)
Expanded voltage range of current Charge Balance Shielded Gate Si Technology to lower RSP and reduce FOM’s
Low gate charge for a given RDS(ON) (low figure of merit)
Soft reverse recovery to reduce voltage spikes in SR
Applications
Synchronous rectification
Micro solar inverters and off line UPS systems
High efficiency DC-DC converters
High current DC motor drives
Battery management
PDU /BFU in telecom Power distribution
Hot Swap stage

40. RDS(ON) Max (mΩ) @ VGS = 10V
100/150 V Trench MOSFETs
PowerTrench® III MOSFET & V line-up in TO-220/F & D2-PAK
Part Number
Package
BVDSS Min. (V)
Technology
RDS(ON) Max VGS = 10V
Qg Typ.
ID (A)
PD (W)
FDT1600N10ALZ
SOT-223
100
PT5
160
2.78
5.6
10.42
FDD1600N10ALZ
D-PAK
6.8
14.9
FDPF680N10T
TO-220F
PT3 68 13 12 24
FDPF3860T
38.2 23 20
33.8
FDB3860
TO-263(D2PAK) 37 21 30 71
FDP150N10
TO-220 15 53 57
110
FDP150N10A_F102
16.2 36 91
FDB150N10
0.88
FDP120N10 66 74
170
FDB120N10
FDP100N10 10 76 75
208
FDP090N10 9 89
FDP085N10A_F102
8.5 31
188
FDPF085N10A
FDD770N15A
150 77
8.6 18
56.8
FDPF770N15A 7
FDD390N15ALZ 26 63
FDPF390N15A 40
14.3 22
FDB390N15A 39 19
FDPF190N15A
17.4 33
FDB110N15A 11 47 65
234

41. 650–1,000 V Planar MOSFETs . Product name PKG BVDSS ID [A] RDS(ON) Max
Qg [nC]
FQPF7N65C
TO-220F
650 7
1.4 28
FDPF15N65 15
0.44
48.5
FQD2N80
DPAK
800
1.8
6.3 12
FQP3N80C
TO-220 3
4.8 13
FQPF3N80C
FQP6N80C
5.5
2.5 21
FQPF6N80C
FQP7N80C
6.6
1.9 27
FQPF7N80C
FQP8N80C 8
1.55 35
FQPF8N80C
FQD2N90
D-PAK
900
1.7
7.2
FQU2N90
I-PAK
FQP4N90C 4
4.2 17
FQPF4N90C
FQP6N90C 6
2.3 30
FQPF6N90C
FQP8N90C
FQPF8N90C
FQP9N90C 45
FQPF9N90C
FQD2N100
1000
1.6 9
FQU2N100 .

42. 200-400 V Planar MOSFETs SMD Packages
FDU6N IPAK SL
* Suffix : L – Logic level gate, Z – Zener Protection
** IPAK SL : short lead type

43. 200/250 V Planar MOSFETs
TO-220/F

44. 200/300 V Fast Recovery Diodes

45. 600 V Fast Recovery Diodes .

46. BoostPak – Introduction
[ Boost circuit ]
[ Buck circuit ]
OUTPUT
Vin Vo
Vin Vo +
MOSFET
SBD
BoostPak
Benefits
Reduction of PCB size and system cost
Better reliability with small leakage current of diode at high temperature
Less assembly work

47. BoostPak – Construction
[ Inner view ]
[ External view ]
100V MOSFET
N-Channel PowerTrench® MOSFET 3 1 2 4 5
150V
NP diode
Merit : Much lower leakage current
than Schottky Diode
at high temperature
 Improve system reliability
[ Product Line-up]
Product ID
BVDSS [V]
R DS(on) max [mΩ]
Package
Po [W]
ID [A]
Qg [nC]
Release Plan
Eng. sample
Release
FDD850N10LD
100 75
DPAK 5lead
~ 40 W
15.7
22.2
Available
Released
FDD1600N10ALZD
160
~ 25 W
6.8
2.78

48. Leakage current (typ.) @ VR=100V
BoostPak – Diode Leakage Current
Leakage current VR=100V
@TJ=25’C
@TJ=100’C
@TJ=150’C
100 V 5 A Schottky Diode
0.740 uA uA uA
150 V 5 A NP Diode in BoostPak
0.003 uA
0.30 uA
4.81 uA

49. BoostPak – Example for LED lighting
DC-DC controller
BoostPAK
FL6961
Light control unit
(Sensor, MCU)
Primary side control (FL6961)
VCC regulation for output voltage regulation
Primary Side Regulation without additional feedback
circuit from 2ndary side
- Power Factor Correction
Secondary side control (Buck controller)
Output Current regulation with current mode control
Non Phase-Cut Dimming
MCU Power : Regulator

50. twitter.com/fairchildSemi