1. Brain-Like Computing with Atomically Thin Materials
V. K. Sangwan, D. Jariwala, I. S. Kim, K.-S. Chen, T. J. Marks, L. J. Lauhon, and M. C. Hersam
Northwestern University Materials Research Science & Engineering Center
Memristors are promising circuit elements for post-silicon logic circuits, nonvolatile random access memories, and field-programmable arrays. In this work, a novel three-terminal memristive device is demonstrated based on grain boundaries in single-layer MoS2. These MoS2 memristors show high switching ratios that are suitable for conventional electronic memory architectures. In addition, due to the atomically thin nature of single-layer MoS2, the memristor characteristics can be widely tuned with a gate electrode, which facilitates their implementation in more complex electronic circuits and systems including low-power neuromorphic (i.e., brain-like) computing.
4 μm
(Left) Atomic force micrograph of a single-layer MoS2 flake connected to four electrodes. The black arrows highlight a grain boundary. (Right) Current-voltage curve that shows switching between two conductance states.
V. K. Sangwan, D. Jariwala, I. S. Kim, K.-S. Chen, T. J. Marks, L. J. Lauhon, and M. C. Hersam (2015), “Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2.” Nature Nanotechnology, 10,
This project is a collaboration between Tobin Marks, Lincoln Lauhon, and Mark Hersam of Northwestern University MRSEC IRG 1.
Nature Nanotechnology, 10, 403 (2015).
NSF Grant #DMR