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Published byGerhardt Kästner Modified over 5 years ago
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Fig. 6 Comparison of STM data on point impurities with DFT calculations.
Comparison of STM data on point impurities with DFT calculations. (A) Experimental STM data on a single impurity obtained under tunneling conditions Vbias = 0.1 V and Isetpoint = 55 pA. (B) DFT-simulated STM images of Si1C3 defect for two bands below (EV1 and EV2) and above (EC1 and EC1) the Fermi level. (C) Experimental STM data on a dimer-like impurity obtained under tunneling conditions Vbias = 0.3 V and Isetpoint = 55 pA. Inset shows a line profile along the A and B points. (D) DFT-simulated STM images of Si2C6 defect for two bands below (EV1 and EV2) and above (EC1 and EC1) the Fermi level. Maxim Ziatdinov et al. Sci Adv 2019;5:eaaw8989 Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
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