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Fig. 4 Effects of individual picosecond and microsecond pulses.
Effects of individual picosecond and microsecond pulses. (A) The multilevel memory signal as a function of the number of applied picosecond pulses. The writing current density in the 2-μm-size CuMnAs/GaAs bit cell recalculated from the applied terahertz field amplitude is 2.9 × 109 A cm–2. (B) Same as (A) for the microsecond pulses and an applied writing current density of 3 × 107 A cm–2 in the 3.5-μm-size CuMnAs/GaAs cell. Kamil Olejník et al. Sci Adv 2018;4:eaar3566 Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
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