1. Opto-Electronics & Materials Laboratory Li-Jen Chou ( ) Investigations on low-dimensional nanostructures: synthesis, characterization, applications and fundamental mechanisms Department of Materials Science and Engineering National Tsing Hua University, Hsinchu, Taiwan

2. Opto-Electronics & Materials Laboratory Team Members – – :

3. Opto-Electronics & Materials Laboratory 96 Publication s: Impact No. (No. Papers) PI 1: ~10 (3), ~8 (2), ~6 (1), ~4 (7) PI 2: ~ 4 (13) PI 3: ~ 6 (1), ~5(1), ~4 (2) PI 4: ~10 (2), ~8 (2), ~6 (2), ~4 (2) PI 5: ~ 4 (4) Nano Lett. (~10), Adv. Mater. (~8), Small (~6), Chem. Mater. (~5), J. Mater. Chem. Appl. Phys. Lett. (~4)

4. Opto-Electronics & Materials Laboratory 97 Publications: Impact No. (No. Papers) PI 1: ~ 26 (1), ~ 10 (3), ~8 (3), ~4 (2), > 3.5 (2) PI 2: ~ >7 (2), >5 (2), > 3.5 (7) PI 3: ~ >8 (1), >6 (1), ~5(2), ~4 (2), > 3.5 (3) PI 4: ~ 10 (3), ~4 (2), ~ 3.5 (1) PI 5: ~ 4 (1), ~ 3.5 (4) PI 6: ~ 8 (1), ~ 4 (1) Science (~26), Nano Lett. (~10), Adv. Mater. (~8), Small (~6), Chem. Mater. (~5), J. Mater. Chem. (~4), Appl. Phys. Lett. (~3.5)

5. Opto-Electronics & Materials Laboratory Prof. Z.L. Wang (Gatech, USA) Profs. K.N. Tu, Y. Hwang (UCLA, USA) Prof. D. Shindo (Tohoku Univ. Japan) Prof. S. Isoda (Kyoto Univ. Japan) Profs. M. Aono, Y. Bando, (NIMS, Japan)

6. Opto-Electronics & Materials Laboratory Observation of Atomic Diffusion at Twin- modified Grain Boundaries in Copper

7. Opto-Electronics & Materials Laboratory K.C. Chen et al. Science, 321, 1066 (2008).

8. Opto-Electronics & Materials Laboratory

11. PSSA Back Cover, May, 2008

12. Opto-Electronics & Materials Laboratory J. Mater. Chem. Invited Highlight Paper

13. Opto-Electronics & Materials Laboratory Y.C. Lin et al. Nano Lett. 8, 913 ( 2008)

14. Opto-Electronics & Materials Laboratory In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi 2 in nanowires of Si, Nano Letters 8, 2194 (2008).

15. Opto-Electronics & Materials Laboratory (g) (b)(c) (d)(e)(f) (a) L0L0 L (h) (µm) P cr 3µm3µm R L d Adv. Mater. 20, 3919 (2008) Elastic Properties and Buckling of Silicon Nanowires,

16. Opto-Electronics & Materials Laboratory Formation and Characterization of NixInAs/InAs Nanowire Heterostructures Nano Letters, Vol. 8, No. 12, p 4528 - 4533, (2008).

17. Opto-Electronics & Materials Laboratory Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008). Coaxial Metal-Oxide- Semiconductor (MOS) Au/Ga 2 O 3 /GaN for Nitride Based Logic Nanodevices

18. Opto-Electronics & Materials Laboratory Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires Nano Letters, Vol. 8, No. 10, p 3081 - 3085, (2008).

19. Opto-Electronics & Materials Laboratory Tunable Plasmonic Response from Alkanethiolate-Stabilized Gold Nanoparticle Superlattices: Evidence of Near-Field Coupling J. Am. Chem. Soc. (Communication) 2008, 130, 824 826 ( )

20. Opto-Electronics & Materials Laboratory Comparison of Ni-Si and Co-Si systems Y.C. Chou et al. Nano Lett. 9 (in press, 2009)

21. Opto-Electronics & Materials Laboratory M.P. Lu et al. Piezoelectric Nanogenerator using p-type ZnO Nanowire Arrays, Nano Lett. 9, 1223 (2009)

22. Opto-Electronics & Materials Laboratory Figure 7.4 (a-c) A sequence of TEM images of the Au-Ga 2 O 3 core- shell nanowires transform into Au-peapodded Ga 2 O 3 nanowires heated at 1000 in the in-situ TEM. In-situ Observation of Complex Nanowires Results and Discussion

23. Opto-Electronics & Materials Laboratory Nano-Photonic Switch Surface Plasmon Resonance (SPR )of Metal Nanoparticles Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008).

24. Opto-Electronics & Materials Laboratory In our case, an electric potential hologram was acquired by the electron holography under the illumination of the green and red lasers. Procedures Green Light Turn on Red Light Experimental Procedures

25. Opto-Electronics & Materials Laboratory Figure (a) and (b) are the electron hologram and reconstructed phase image under the illumination of 532 nm laser. The phase shift is mostly due to the mean field potential. (a) (b)

26. Opto-Electronics & Materials Laboratory The phase shift image (right figure) due to the LSPR effect (under green light) is deduced. We assume that these bright spots is due to the excited state of the electrons. High Electric Potential Area

27. Opto-Electronics & Materials Laboratory The phase shift due to the excited electrons is not obvious under the illumination of red light, which is consistent with the LSPR theory.

28. Opto-Electronics & Materials Laboratory Prelim. Results

29. Opto-Electronics & Materials Laboratory In-situ TEM FE Measurements

30. Opto-Electronics & Materials Laboratory Thanks For Your Attention