1. Introduction to the TRAMS project objectives and results in Y1 Antonio Rubio, Ramon Canal UPC, Project coordinator CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011

2. Global objective of TRAMS CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011 The TRAMS vision for reliable, cost-efficient tera-device multicores powering high performance future, safety-critical applications

3. Structure CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011 Bulk-cmos sub-22nm Finfets CNT Others (MIM, RRAM, PCM …) Mitigation, adaptive, and tolerant mechanisms Multi-core architectures

4. CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011 M0Y1(M12)Y2(M24) MS1 MS2 MS3 MS4 web Variability and reliability bulk cmos device level circuit level Variability and reliability Findfets and CNT Mitigation, compensation, redundant and reconfiguration mechanims D5.1 D1.1, D2.1,D3.1, D4.1,D5.1,D5.2, D3.6

5. CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011 6T 1T1C 3T1D Device level: 65,45,32,22,16, Si-CMOS public models 18 and 13 nm Si-CMOS from WP1 CNFETS (n=8), equivalent to 16nm Circuit level: Bit-cell types: 6T, 1T1C, 3T1D 32 kB cache circuit: both 6T and 3T1D. Si-bulkCNFET Work in Y1

6. Process variability at device level CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011

7. Bit-cells: 6T bit-cell 3T1D bit-cell 1T1C (32) bit-cell 32 kB cache: CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011

8. IMPACT OF DEVICE VARIATIONS ON MEMORY PERFORMANCE DRIFT Significant impact on performances of speed AND a dramatic drop in reliability (catastrophic Failures) Prediction of null yield With conventional implementation methods CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011

9. Circuit level Conclusions Temperature is a key environmental factor, that may cause an increase until a 60% in read/write time cycles, both S and DRAM. Temperature is a very limiting factor in DRAM, reducing the retention time around 1/50. Temperature is an inherent factor, significant in these technologies, possibilities to sense T and actuate with different adaptive mechanisms. Voltage fluctuations and systematic manufacturing variability are the responsible of 15 and 10% delay fluctuations. Can be partially alleviated at design (layout and circuit level). Reliability characteristics are dramatically impacted by process random variations (higher in 6T and 1T1C than in 3T1D but dramatic for both) (null yield), as well as aging BTI (degeneration) and SEU. New challenging alternatives to implement complex systems have to be investigated. Potentially future technologies, as CNFET and others, will offer interesting alternatives in memory design

10. Conclusions In Y2 (second year) TRAMS project will work on the analysis of alleviating mechanisms for systematic process variations and voltage fluctuations, at layout and circuit level. About temperature we will investigate on innovative adapting and compensation mechanisms, with the use of sensors and knobs, similar solution will be applied to attenuate the effect of aging caused by BTI. For process variations we will investigate the trade-off between mitigation solutions at design level and the resulting performances. For moderate and high catastrophic and transient failures we will investigate new redundancy and error codes insertion techniques. And even for high and very high catastrophic and transient failures we will investigated hierarchic significantly redundant tolerant architectures. Inclusion of Finfet and CNTFET technologies. CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011

12. Thanks for your attention! CASTNESS’11 WORKSHOP ON TERACOMP FET Projects, Rome, January 17 th -18 th 2011