1. SU8 process Soft Bake (SB) for thin SU8
SU-8 Testing
SU8 process Soft Bake (SB) for thin SU8

3. “Control” Recipe 10s @ 500rpm; 30s @ 2000rpm Soft Bake 60s @ 93°C
Exposure 275 W
PEB 93°C
Develop 4min in SU8 developer
SU8 developer rinse
IPA rinse/ Nitrogen Dry

4. 1st Run of Tests 4 samples; 8 devices/sample 4 Wells, 4 Blanks/sample
S1: “Control”:All shorted. Avg Well(W)- 8.6Ω Avg Blank(B)-10Ω, misaligned.
S2: 8min (Evap/PEB)Avg W-2.7±0.8Ω B-11MΩ
Avg Blank Cap: 15pF 0/3 Short
S3: 13min(Evap/PEB)Avg W-4.9Ω B-5.6±7.7MΩ
Avg Blank Cap: 17pF 1/2 Short
S4: 15min(Evap/PEB)Avg W-3.8±1Ω B-11MΩ
Avg Blank Cap: 17pF 0/2 Short
Cracking seen in S2, S3, S4
Need to get stats

5. 2nd set of test samples Summary
2 “Controls”
2.5 min 60°C; 1min 93°C
5 min 60°C; 1min 93°C
Too Many Controls

6. 2nd Test Results “Control 1” S5
Device
Capacitance(pF)
Resistance(Ω)
Type 1 -1
29.4 B 2
0.5 W 3
9.38
3.7x10^6 4 24 5 6 7
421 8 17
Summary: W: 4/4 Shorted B: 3/4 Shorted
Well Average R: 12.1 ± 10Ω
Excluding 3 Blank Average R: 158± 230Ω
Blank Capacitance: 9.38pF

7. “Control 2” S6 Device Capacitance(pF) Resistance(Ω) Type 1 Damaged 9.7
4.6x10^6 W 2
9.33
8.3x10^6 B
3 Damaged
9.61
3.04x10^5 4
9.4
1.05x10^7 5 -1
142 6
9.25
1.1x10^7 7 46 8
10.3
12000
Summary: W: 2/4 Shorted B: 0/4 Shorted
Avg Blank Capacitance: 9.57± 0.5pF
Avg Well Resistance: 94± 68Ω

8. 2.5min SB S7 Device Capacitance(pF) Resistance(Ω) Type 1 -1 13.4 W 2
428 B 3
10.8 4
294 5
3.7 6
5.7 7
4.1 8
11.6
Summary: All Shorted
Avg Blank Resistance: 184.8± 211Ω
Avg Well Resistance: 8± 4.9Ω

9. 5min SB S8 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.8 W 2 16 B3
1.9 4 44 5
4.3
6 Error 7*
15.16
1.76 8
15.25
0.57x10^6
Summary: W: 3/4 Shorted B: 3/4 Shorted
Avg Blank Resistance: 0.19± 0.33MΩ
Avg Well Resistance: 3.7± 1.6Ω
7*: Remeasured and same effect ignored in the average.

10. “Control 2” 20x

11. “Control 2” 100x

12. “Control1” 100x

13. 2.5min SB 100x

14. 5min SB 100x

15. 3rd SU8 tests 2 samples, 8 Devices S9: 8min SB @ 60°C, PEB 60s @ 95°C
S10: 10min Exp, PEB 95°C

16. S9 Back Contact Broken no Resistances Measured Capacitances
Device
Capacitance(pF)
Resistance(Ω)
Type 1 -1 W 2 B 3 12 4 19 5 6 7 8 20
Back Contact Broken no Resistances
Measured Capacitances
W: 2/4 Shorted B: 1/4 Shorted
Avg Capacitance Well: 19.3± 0.6pF

17. S10 Device Capacitance(pF) Resistance(Ω) Type 1 -1 4.5 W 2 18 B 3 6.7
121 5
3.9 6
127 7 8
118
Summary: W: 4/4 Shorted B: 4/4 Shorted
Avg Blank Capacitance: ± pF
Avg Well Resistance: 5.0± 1.2Ω
Avg Blank Resistance: 96± 52Ω