1. PMMA & HSQ trend chart December 2012 Sangeeth kallatt

2. PMMA sample preparation Substrate : 100 oxide & Si wafer Cleaning : O 2 plasma clean (2000W, 10 min) Spin speed : final rpm 6000 for 40 sec Pre bake: 180 degrees for 3 min Exposure parameters: EHT : 20 Kv Aperture : 10um Working distance: 5mm Development time : 30 sec in MIBK: IPA (1:3)

3. 50nm line : standard deviation from expected

4. 100nm line : standard deviation from expected

5. 200nm line : standard deviation from expected

6. PMMA grating patterns for proximity study

7. PMMA circles

8. Contrast curve for PMMA 950 A2 D 0 = clearing dose ≈ 140 D 100 = dose with resist insoluble ≈ 95 Which gives ϒ = 6.8

9. HSQ sample preparation Substrate : Si wafer Cleaning : O 2 plasma clean (2000W, 10 min) Spin speed : final rpm 6000 for 40 sec Pre bake: no pre bake Exposure parameters: EHT : 20 Kv Aperture : 10um Working distance: 5mm Development time : 2 min in 2.36 % TMAH

10. HSQ lines

11. 25 nm HSQ lines: variation of line width with Pitch Pattern size

12. 50 nm HSQ lines: variation of line width with Pitch Pattern size

13. 100 nm HSQ lines: variation of line width with Pitch Pattern size

14. Patterns for studying proximity effects

15. HSQ pillars

16. Contrast Curve for HSQ (XR1541-6%) D 0 = dose, negative resist removed ≈ 225 D 100 = dose for negative resist insoluble≈ 260 Which gives ϒ = 16