1. IHP 2 Im Technologiepark 25 15236 Frankfurt (Oder) Germany IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2005 - All rights reserved Creation of SiGe Radhard Library AMICSA 2006 H.-V. Heyer 1, U. Jagdhold 2 Kayser-Threde GmbH 1 Wolfratshauser Str. 48 81379 München Germany

2. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Outline Introduction Goal Characterization of the Existing Technology New Layout Rules at Transistor Level New Design Rules at Design Level Outlook Example Local Oscillator (The SiMs and 30/20 Projects) Conclusion

3. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Introduction I “High Frequency SiGe MMICs for Converter and Local Oscillators” (SiMs) survey demonstrates that the best candidate for optimal integration of microwave elements with high performance is the SiGe Technology (ESA TRP study) Microwave components (especially the Local Oscillator) for functional elements of communication equipments in space fit well with the performance to be achieved SiMs Study has identified IHP as best foundry for the SiGe components in up and down converters in space SiGe BiCMOS Technology is already a Radiation hard Technology according to Cressler ( Silicon-Germanium Heterojunction Bipolar Transistors, chapter 3 “SiGe HBT BiCMOS Technology”) Basic tests of the SGB25VD Technology shall demonstrate the Cressler statement (ESA ARTES 5 Programme)

4. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Introduction II IHP is interested in the dedicated market for space and nuclear components market The RF experience needed is already existing from a lot of research projects Missing is radiation experience for IHP technology IHP has started a Radiation hardened Library Project to overcome this lack of experience This presentation will demonstrate the current und future activities of this project at IHP

5. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Goal Radiation hardened components for the use in space projects as products in Multi-project-wavers MPW Radiation hardened components for the nuclear industry & research Radiation hardened library for SGB25VD Technology Radiation Hardness in the Level of 200 krad total dose Radiation Hardness by Design of the Transistors Layouts Radiation Hardness by Design Methods (e. g. Voter) No change in the existing Technology SGB25VD

6. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology I Characterization of the existing Technology is done in the following steps Characterization for very high dose rates and high dose levels (Mrad/s and 100Mrad total dose) Customers are the nuclear research facilities and their industries Test of basic structures, facility is CNM in Spain (Barcelona) Technology is already under tests Characterization for medium and low dose rates ( 2rad/s and 002rad/s up to 200Krad total dose) Customer is the space industry Test of basic structures within the 30/20 project (TID,SEE,NIEL tests), facility GfS Munich Germany, and RADEF Jyväskylä Finland

7. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology II Fig.1: Current Gain Degradation of Bipolar Transistors Radiation and Measurement done at CNM Barcelona

8. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology III Radiation test of the 30/20 Project Fig.2: Radiation Test Circuit Circuit Contains: Bipolar Transistors N-Mos Transistors P-Mos Transistors Bipolar Oscillator MOS Oscillator MOS Shiftregister Following Tests will be performed: Total Dose Test using Co60 up to 200krad Displacement Damage Test using proton beam up to 10 12 protons/cm 2 Single Event Upset and Latchup Test using heavy ion beam 10 11 ions/cm 2

9. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology IV Fig.3: Test Board with Bonded Chips and Wiring Fig.4: Test Equipment with Wiring

10. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology V Fig. 5: Schematic of the Local Oscillator Project 30/20, Radiation Hardness will be tested

11. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Characterization of the Existing Technology VI New Test Chip will be made to characterize MIM`s, Interconnection, Resistors, and Diodes

12. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Layout Rules at Transistor Level I New DRC Rules on Transistor Level Disabling of Latchup Rules is Forbidden Gate Poly extension of MOS gate is limited to max. 1.41 microns PWell and Nwell contact rings must have dimensions less than 12 microns All Devices must be located within contacted NWell/PWell Ring Gate Poly have not to cross any well border Gate Poly must be within NWell or Pwell Active Shapes on different nets must be shielded with well contact

13. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Layout Rules at Transistor Level II Fig. 6: Radiation Hard Design Rule incorporation to DFII from Cadence

14. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Layout Rules at Transistor Level III Fig.7: Inverter Design after new Radiation Hardness Rules after G. Anelli, Ref.[1] Pwell + Contacts No Poly extensions over wells

15. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Layout Rules at Transistor Level IV Fig. 8: Bipolar Transistor with PWell Ring and Contact Base Emitter Collector Pwell Ring with Ground Contact

16. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Design Rules at Design Level I Cell Level: New Voter Cell Solution for Latch-up and Single Event Upset Drawback: Additional Area Input D Q > D Q > D Q > D Q > D Q > D Q > voter Output CLK Fig. 9: Voter Cell for Triple Module Redundancy after S. Habinc, Ref.[3]

17. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Design Rules at Design Level II System Level: Cache memory with parity protection Fig. 10: Cache with parity, Ref. [3] Solution for Latch-up, Single Event Upset Drawback: Additional Hardware parity generation parity generation FT memory (cache) exception (cache miss) parity check parity check memory controller

18. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved New Design Rules at Design Level III Cell Level: IO corner cell with Latch-up detection System Level: Power down Latch_up detection Fig. 11: Latch up detector Solution for Latch-up Drawback: New Start of the Chip

19. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Outlook I Example Local Oscillator (The SiMs and 30/20 Projects) Basic Structure radiation test schedule of 30/20

20. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Outlook II Local Oscillator radiation test schedule of 30/20

21. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Outlook III Start of New Project Radiation Hardness March 2006 Development of additional Test structures Oct. 2006 Creation of a new CMOS Rad Hard Library Dec. 2006 Design of a Rad Hard Test Device, e.g. Leon3ft Jan. 2007 Preparation of the Test Device April 2007 Radiation Tests of the Test Device (in Cooperation)

22. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Conclusion By using our inhouse BiCMOS Technology, it should be possible by applying new Design Rules and new Libraries to make circuits resistant against any kind of Radiation. Short Term: early access to Rad Hard Silicon Long Term: enclose a new market segment for IHP

23. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Literature References [1] Giovanni Anelli, “Radiation-hard circuits in deep submicron CMOS technologies”, CERN, Microelectronics Group, Switzerland [2] Ulrich Trunk “Strahlenschäden in Integrierten Schaltungen” ASIC Labor Heidelberg, Physikalisches Institut der Universität Heidelberg, He Seminar, 2.Juli 2002, [3] Sandi Habinc, “Functional triple modular redundancy (FTMR) VHDL design methodology for redundancy in combinatorial and sequential logic” – Design and assessment report, Gaisler Research, Inc.

24. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Physics Radiation: Leptonen, Bosonen, Baryonen, Mesonen Electrons, X-Ray, Protons, Neutrons, Alpha Particles, Heavy Ions… Energy: 10 -4 – 10 6 MeV Impact on Transistors: CMOS: Leakage of Transistors 1pA->1nA Drain Current change Bipolar: current gain degradation Impact on Circuitry: IC-Level Leakage, Latch-up, Single Event Upset Advantages: CMOS: for 0.25 micron Processes V t -Change no concern Bipolar: has already a guard ring, and there is always a current running through the device, Latch-up no concern

25. IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2006 - All rights reserved Solution = Hardening by Design I Transistor Level: Guard Rings, Metal connection between Transistors many bulk contacts Solution for Latch-up, IC-Level Leakage Drawback: Area will be increased After G. Anelli, Ref.[1] Folie von G. Schoof