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C ZnO.  kristall bindning N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N.

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Presentation on theme: "C ZnO.  kristall bindning N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N."— Presentation transcript:

1 C ZnO

2  kristall bindning

3 N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N

4 N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N

5 Eks: Si Eks: GaAs

6

7 Par av e - og hull (h + ) (EHP) ! Intrinsisk Si

8 Ekstrinsisk Si N-type P-type

9 Kvantbrunn

10

11 Fermifordelning i intrinsisk, n-type og p-type material n p n = p

12 Schematic band diagram Density of states Fermi-Dirac distribution Carrier concentration

13 RT

14

15 Variation of mobility as a function of total doping concentration (N a + N d ) for Si, Ge and GaAs at 300 K

16 To materialer i likevekt

17 Hall effekt

18


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