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Published byDraven Hosmer Modified over 9 years ago
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C ZnO
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kristall bindning
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N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N
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N st Si atoms Filled; 2N electons Filled; 2N + 6N Filled; 2N Unfilled; 4N
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Eks: Si Eks: GaAs
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Par av e - og hull (h + ) (EHP) ! Intrinsisk Si
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Ekstrinsisk Si N-type P-type
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Kvantbrunn
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Fermifordelning i intrinsisk, n-type og p-type material n p n = p
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Schematic band diagram Density of states Fermi-Dirac distribution Carrier concentration
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RT
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Variation of mobility as a function of total doping concentration (N a + N d ) for Si, Ge and GaAs at 300 K
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To materialer i likevekt
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Hall effekt
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