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Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC transistor.

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Presentation on theme: "Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC transistor."— Presentation transcript:

1 http://www.eet.bme.hu Budapest University of Technology and Economics Department of Electron Devices Microelectronics, BSc course Bipolar IC transistor 4 http://www.eet.bme.hu/~poppe/miel/en/10-bipol4.pptx Look at it as individual work.

2 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 2 Small signal equivalents of bipolar transistors

3 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 3 The small signal operation Finding the operating point In Out

4 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 4 The small signal operation AC equivalents for the passives components In Out & the BJT In Out In Out

5 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 5 Different equivalents 1. physical "two element" "three element” "five elemenet" 2. "Black box" (two-port) h parameter y parameter s parameter For all: common base / common emitter setups

6 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 6 Physical equivalents 2 elelement I E linearly controls I C finite input resistance common base

7 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 7 Physical equivalents 2 element, common base

8 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 8 Physical equivalents 2 element, common emitter common emitter

9 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 9 Physical equivalents 2 element c.b.c.e.

10 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 10 Physical equivalents The small signal current gain of a BJT in the I E = 1 mA operating point is  = 200. Find the element values of its AC equivalents in the common base and common emitter setups! c.b. c.e. Problem 2 element

11 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 11 Physical equivalents 3 element c.b.c.e.

12 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 12 Physical equivalents 5 elements c.b.c.e. Early Giacoletto

13 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 13 Problem Find the gain and the input resistance of the shown circuit! Input data:  = 200, U t = 12 V, U B =6 V, I E = 1 mA, current in the voltage divider at the base: 0,1 mA. In Out  k mA V RR BB 60 1.0 6 21   k I U R E B E 3.5 1 7.067.0     

14 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 14 u out out Input VmA V U I U I g T E T C m /38 026.0 1 

15 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 15 u out Input in

16 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 16 Considering the capacitances T 0 is the base transit time

17 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 17 Considering the capacitances

18 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 18 Two port parameters E.g.: h parameters (hybrid parameters) Different convention for reference directions!

19 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 19 Two port parameters h parameters constUu dI i i h   22 1 2 0 1 2 21 current gain in case of shorted output constIi dU dI u i h   11 2 2 0 2 2 22 output conductance in case of open input constIi dU u u h   11 2 1 0 2 1 12 voltage backlash in case of open input constUu dI dU i u h   22 1 1 0 1 1 11 input resistance when the output is in short

20 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 20 Two port parameters h parameters, c.e., c.b.:

21 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 21 Two port parameters h parameters on data sheets

22 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 22 High frequency operation

23 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 23 High frequency operation cut-off frequencies of the BJT 20 db/decade meas

24 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 24 High frequency operation cut-off frequencies of the BJT

25 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 25 High frequency operation cut-off frequencies of the BJT

26 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 26 The BJT as a power switch

27 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 27 Switching mode operation The BJT as a power switch Two stable op.points: closed (A), saturated (B) Important question: the power to be switched? saturation

28 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 28 Switching mode operation The BJT as a digital signal processing device Two stable op.points: closed / saturated Transfer characteristic: inverter-like Important question: how quick is the switching? out in

29 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 29 Maximal ratings P dmax dissipation hyperbole can be exceeded for short time

30 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 30 Switching transients Two types: inner and outer transients Only the inner transients will be discussed out in in1 in0 in2

31 Budapest University of Technology and Economics Department of Electron Devices 18-10-2010 Microelectronics BSc course, Bipolar transistor 4 © András Poppe & Vladimír Székely, BME-EET 2008 31 Switching transients out in in1 in0in2 IN IN1 IN0 in0

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