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122 Nov. 2011 GTK Microchannel Cooling Hydraulic simulation with Rectangular Manifold Enrico Da Riva, Vinod Rao CERN (EN/CV/DC) 22 th Nov 2011 E. Da Riva,

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Presentation on theme: "122 Nov. 2011 GTK Microchannel Cooling Hydraulic simulation with Rectangular Manifold Enrico Da Riva, Vinod Rao CERN (EN/CV/DC) 22 th Nov 2011 E. Da Riva,"— Presentation transcript:

1 122 Nov. 2011 GTK Microchannel Cooling Hydraulic simulation with Rectangular Manifold Enrico Da Riva, Vinod Rao CERN (EN/CV/DC) 22 th Nov 2011 E. Da Riva, V. Rao

2 222 Nov. 2011E. Da Riva, V. Rao Mass Flow: 9.8 g/s Density: 1818.3 kg/(m 3 ) @ -30°C Kinematic viscosity(nu): 0.9cSt @ -30°C Turbulence Intensity: 3 % Heat capacity of fluid: 967 J/(kg K) Thermal conductivity : 0.0633 W/(m-K) Silicon properties: Heat capacity:675 J/(kg K) Density: 2330 kg/(m 3 ) Thermal conductivity: 195 W/(m-K)

3 322 Nov. 2011E. Da Riva, V. Rao

4 422 Nov. 2011E. Da Riva, V. Rao PD:5.1bars PD: 4.3bars PD : 3.9 bars Flow distribution: Wall thickness 100µm channel:100X100 channel:100X100 channel:100X100 Old Manifold Manifold [1.7mm] Manifold [2mm]

5 522 Nov. 2011E. Da Riva, V. Rao PD: 6.7bars PD : 6.4 bars Flow distribution: Wall thickness 200µm channel:200X70 channel:200X70 Manifold widh:1.7mm Manifold width:2mm

6 Influence of s W on x/x 0 and Δp (100 X 100) 22 Nov. 20116 E. Da Riva, V. Rao w = 60 mm, L = 40 mm, q = 2 W cm -2 stst stst swsw a b a [μm] b [μm] s t [μm] s w [μm] channels x/x 0 [%] Pressure Drop [bar] 100 25 4800.124.0 504000.124.4 1003000.135.3 200 0.147.0 MICROCHANNELS w L Fluid INFluid OUT x 0 silicon = 0.094 m, x 0 C 6 F 14 = 0.190 m Double inlet/outlet, 10 g/s, 48 W, -30 °C

7 Influence of s W on x/x 0 and Δp (70 X 200) 22 Nov. 20117 E. Da Riva, V. Rao w = 60 mm, L = 40 mm, q = 2 W cm -2 stst stst swsw a b a [μm] b [μm] s t [μm] s w [μm] channels x/x 0 [%] Pressure Drop [bar] 7020025 2670.094.9 502400.105.2 1002000.105.9 2001500.117.2 MICROCHANNELS w L Fluid INFluid OUT x 0 silicon = 0.094 m, x 0 C 6 F 14 = 0.190 m Double inlet/outlet, 10 g/s, 48 W, -30 °C

8 Influence of s t on x/x 0 22 Nov. 20118 E. Da Riva, V. Rao w = 60 mm, L = 40 mm, q = 2 W cm -2 stst stst swsw a b a [μm] b [μm] s t [μm] s w [μm] channels x/x 0 [%] Pressure Drop [bar] 70200 25 267 0.09 4.9 400.13 25 200150 0.11 7.2 400.14 MICROCHANNELS w L Fluid INFluid OUT x 0 silicon = 0.094 m, x 0 C 6 F 14 = 0.190 m Double inlet/outlet, 10 g/s, 48 W, -30 °C

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