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나노기술에서 가시화의 중요성 이광렬, 이승철 미래기술본부 전산모사팀 2005년 8월 26일.

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Presentation on theme: "나노기술에서 가시화의 중요성 이광렬, 이승철 미래기술본부 전산모사팀 2005년 8월 26일."— Presentation transcript:

1 나노기술에서 가시화의 중요성 이광렬, 이승철 미래기술본부 전산모사팀 2005년 8월 26일

2 What is Observation? 어떤 현상을 오감을 통해 인지하는 것. 재료과학
五感 (Sensing) : Natural Phenomena (physics) 認知 (Recognition) : Brain’s Job (human factor) 재료과학 재료과학=미세조직의 과학

3 Materials Science = Science of Microstructure
Material Science Skill Science 김도근 외, KIST내부자료 대장간, 김홍도 Materials Science = Science of Microstructure

4 Advent of “Materials Science(Microstructure)”
Optical Microscope Advent of “Materials Science(Microstructure)”

5 Electron Microscope Si3N4 1895 W. Roentgen(독일)이 X-ray 발견 1897
Sir J. J. Thomson(독일)이 Electron발견 1924 Louis de Broglie(프랑스)가 전자파동설 제안 1926 Hans Busch가 전자에 대한 자계의 렌즈작용 이론화 1931 Max Knoll & Ernst Ruska의 TEM 발명 (×17.4) 1933 대물렌즈에 pole piece적용 (12,000x) 1938 집속렌즈, 대물렌즈에 pole piece, 투사렌즈, 사진판, 시료방의 사전배기장치 (80,000x) 1954 2단 집속렌즈를 도입하여 시료에 대한 열영향 방지 (100,000x) Si3N4

6 Scanning Probe Microscope
Si (111) Fe on Cu (111)

7 Again:What is Observation?
Si (111) Si3N4 Are we observing real Nature?

8 Interatomic Potentials
Atomistic Simulation New Tools for Nanotechnology i Time Evolution of Ri and vi Interatomic Potentials Empirical Approach First Principle Approach

9 Hierarchy of Computer Simulation
Engineering Design min Continuum Models ms - FEM/FDM Mesoscale Monte Carlo Phase Field Theory TIME ms ns Atomic Level Simulation - Atomistic Monte Carlo - Classical MD ps Fundamental Models First Principle Calculation Quantum Monte Carlo fs 1A 10A 100A 1mm 1mm DISTANCE

10 Electronic Structure Schrödinger Eq.

11 Interatomic Potentials
Atomic Scale Simulation i Time Evolution of Ri and vi Interatomic Potentials Empirical Approach First Principle Approach

12 Massive Parallel Computation
Sandia National Lab. Beowulf CALTECH Los Alamos National Lab. Alpha SAIT

13 KIST Supercomputer: Grand
1024 Xeon CPUs, 3.0 Tera Flops

14 Moor’s Law in Atomistic Simulation
Empirical MD Number of atoms has doubled every 19 months. 864 atoms in 1964 (A. Rahman) 6.44 billion atoms in ’2000 First Principle MD Number of atoms has doubled every 12 months. 8 atoms in 1985 (R. Car & M. Parrinello) 111,000 atoms in ’2000

15 Nanotechnology

16 Size Matters!: Nanotechnology
Atomic Orbitals N=1 Molecules N=2 Clusters N=10 Q-Size Particles N=2,000 Semiconductor N>>2,000 hn Energy Conduction Band Valence Vacuum CdSe Nanoparticles Smaller Size

17 Scale Down: Nanotechnology
0.13 m 2~4nm 10 nm Kinetics based on continuum media hypothesis is not sufficient.

18 Nanoscience or Nanotechnology
현상을 원자∙분자 단위에서 규명하고 제어하여, 구성 원자 및 분자들을 적절히 분산 결합 시킴으로써 새로운 물성의 재료/소자를 창출하는 기술 Needs Atomic Scale Understandings on the Structure, the Kinetics and the Properties

19 Insufficient Experimental Tools

20 Synthesis & Manipulation
Methodology of Nano-R&D Synthesis & Manipulation Modeling & Simulation Analysis & Characterization

21 Atomic Scale Simulation of Interfacial Intermixing during Low Temperature Deposition in Co-Al System

22 Controlling & Understanding
Magnetic RAM (MRAM) 1 nm Properties of MRAM are largely depends on the Interface Structures of Metal/Metal or Metal/Insulator Controlling & Understanding The atomic behavior at the interface are fundamental to improve the performance of the nano-devices!

23 Thin Film Deposition Cobalt on Al(001) Substrate
Aluminum on Co(001) Substrate Cobalt on Al(001) Substrate

24 Thin Film Deposition 3ML Al on Co(001) 3ML Co on Al(001)
Cobalt Thin Film on Co (001) Surface 3ML Co on Al(001) Aluminum Thin Film on Co (001) Surface 3ML Al on Co(001)

25 Cobalt-Alumimum Thin Films
0.1  3.0 eV 0.1 eV Structure Evolution due to Ion Beam Incident Energy

26 Metal Cluster Deposition
Co Cluster Only Displayed 1.0 eV Co Cluster on Al(001) Al Substrate Only Displayed

27 Amorphous Carbon Bond Coordination Potential Energy

28 Amorphous Carbon Simulation
Thin Film Bond Coord. Kinetic Energy Stress

29 Nano TCAD 공정모사 소자구조 정의 소자 모사 using computer simulations to develop and optimize semiconductor processing technologies and devices 공정모델링 + 소자모델링 소자 특성

30 CMOS FET 원자 규모에서의 계면 구조 형성거동 계면 구조의 변화에 따른 소자 특성 변화 0.13 m 2~4nm

31 System Required 나노 CMOS FET 모사를 위한 차세대 TCAD의 prototype 구현
계면의 원자구조에 따른 소자특성 해석 10억 개 입자로 구성된 계의 거동을 해석하기 위한 대규모 MD/MC 전산모사 기술 10억 개 입자로 구성된 계의 거동을 관찰하기 위한 대규모 가시화 기술

32 Requirements for NT High computing power at low cost
High performance visualization tools

33 Virtual Reality & Visualization

34 감사합니다.

35

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