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Published byEmerald Gibbs Modified over 9 years ago
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R&D for ECAL VFE technology prototype -Gerard Bohner -Jacques Lecoq -Samuel Manen LPC Clermond-Ferrand, Fr -Christophe de La Taille -Julien Fleury -Gisèle Martin LAL Orsay, Fr Presented by Bernard Bouquet ECFA-DESY Workshop Amsterdam April, 2 nd
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Specifications Silicon-Tungsten calorimeter 40 layers 30 Millions channels General information 1 train every 200ms 3000 bunch crossing/train 1 bunch crossing every 154ns Timing information Dynamic range : 15 bit Auto-triggered front end electronic Signal information Electronic in the detector : -Thin design for room saving -Low consumption design mechanic information General specifications Electrical specifications
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Specifications 1 MIP 6.5fC Linearity below 1% up to 2500 MIP 14 or 15 bit dynamic range Dynamic range Depending on the silicium wafer size Assuming 1 chip per wafer 36 diodes per wafer at this point 36 channels per chip Number of channels/chip 1 MIP 40,000 e - Noise expected to be below 2000 e - Noise specification Detector is active only 1ms per 200ms Electronic enabled 2% of total inter-train time Consumption specification General specifications Electrical specifications
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Schema Block Ch.1 1 10 100 Ch.2 3 BCID 12 ADC Energy BCID Gain Channel selection Channel 6 Ch.36 First ideas on block schema Further ideas on system design
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Schema Block First ideas on block schema Further ideas on system design 1 ADC/channel ? Consumption of ADC have to be < 1 mW Memorize after digitisation Use of digital memory instead of analogue ADC New technology AMS 0.35µm BICMOS Using standard filter is not possible anymore due to technological problem high value resistance are not makable anymore LPC solution : A switchable integrator Shaper LPC Will study digital memories +counter : Static memory Dynamic memory Bunch crossing counter
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Preamplifier Integration of the charge Due to a feedback capacitance Low noise, high speed design Charge preamplifier Compensation capacitors Middle stage Input stage Feedback capacitor Feedback resistor Output stage OUT 50 1 1
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Shaper OPA Standard CRRC structure Integration time (switch on) AMS 0.35µm BICMOS techno Does not allow us to choose this solution (R2 ~ 100k) Voltage to current converter Preamp output R1 R2 C1 C2 Standard bandpass filter optimized to minimize noise Structure tested at LPC
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ADC Structure tested at LPC : PIPELINE ADC If V IN > V ref Bit N out =1 and V IN N+1 =(V IN -V ref )*2 If V IN < V ref Bit N out =0 and V IN N+1 =V IN *2 Behaviour Comparator V ref V IN Amplifier Gain=2 V ref Gnd Bit N out To V IN stage N+1 Stage N of pipeline ADC block schema Chip should be sent to foundry in April 2003 V IN b0b0 b1b1 b2b2 b3b3 b4b4 b5b5 b6b6 b7b7 b8b8 b9b9 10 bit ADC 10 stages
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Schedule Input transistor Preamplifier 1 analogue channel LAL Foundry of pipeline ADC V I conversion Integrator shaper LPC This year (depending on funding)
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