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SiPM Interconnections to 3D electronics Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany SiMPs basics Why do we need 3D interconnections.

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Presentation on theme: "SiPM Interconnections to 3D electronics Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany SiMPs basics Why do we need 3D interconnections."— Presentation transcript:

1 SiPM Interconnections to 3D electronics Jelena Ninkovic Max-Planck-Institute for Physics, Munich, Germany SiMPs basics Why do we need 3D interconnections Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept What we want to do

2 Jelena Ninkovic 2 What is a Silicon Photomultiplier - SiPM An array of avalanche photodiodes operated in Geiger mode  binary device passive quenching by integrated resistor read out in parallel  signal is sum of all fired cells AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

3 MEPhI/Pulsar (Moscow) - Dolgoshein CPTA (Moscow) - Golovin Zecotek(Singapore) - Sadygov Amplification Technologies (Orlando, USA) Hamamatsu Photonics (Hamamatsu, Japan) SensL(Cork, Ireland) AdvanSiD (former FBK-irst Trento, Italy) STMicroelectronics (Italy) KETEK (Munich) RMD (Boston, USA) ExcelitasTechnologies (former PerkinElmer) MPI Semiconductor Laboratory (Munich) Novel Device Laboratory (Beijing, China) Philips (Netherlands) Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl, dSiPM ……… What is available? Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 3

4 Why do we need 3D integration? Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 4

5 Components of a SiPM cell Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 5

6 SiPM cell components  SiMPl approach n+n+ p+p+ AD RQRQ CDCD C V bias Jelena Ninkovic 6 AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 Concept developed at Max-Planck-Society Semiconductor Laboratory

7 SiPM cell components  SiMPl approach n+n+ p+p+ n high field AD RQRQ CDCD C V bias Jelena Ninkovic 7 AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

8 SiPM cell components  SiMPl approach n+n+ p+p+ n - non-depleted region n - depleted gap region n high field AD RQRQ CDCD C V bias Jelena Ninkovic 8 AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

9 SiPM cell components  SiMPl approach n+n+ p+p+ n - non-depleted region n - depleted gap region n high field AD RQRQ CDCD C V bias Sensor wafer Handle wafer SOI wafers Jelena Ninkovic 9 AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013

10 Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 10 Advantages and Disadvantages Advantages: no need of polysilicon free entrance window for light, no metal necessary within the array coarse lithographic level simple technology inherent diffusion barrier against minorities in the bulk -> less optical cross talkDrawbacks: required depth for vertical resistors does not match wafer thickness wafer bonding is necessary for big pixel sizes significant changes of cell size requires change of the material vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times

11 Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 11 Prototype production High homogeneity over big distances! 6 100 cells arrays placed over 6mm distance High homogeneity within the array! 6mm 30x30 array sensitive area free High linearity!

12  V=2V  V=1V Hamamatsu MPPC SiMPL  V=2V  V=1V Fill factor & Cross Talk & Photon Detection Efficiency Pitch / GapFill factor Cross talk meas. (  V=2V) 130  m / 10  m 85.2%29% 130  m / 11  m 83.8%27% 130  m / 12  m 82.4%25% 130  m / 20  m 71.6%15% Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 12 Fill factor limited only by the cross talk suppression need! No special cross talk suppression technology applied just intrinsic property of SiMPl devices

13 @223K Detection of particles Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 13 Excellent time stamping due to the fast avalanche process (<1ns) MIP gives about 80pairs/  m  huge signal in SiPM  allows operation at small  V Reduction of dark rate and cross talk by at least an order of magnitude <10% GE still gives high MIP detection efficiency

14 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 14

15 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 15

16 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 16 Logic, TDC, Photon counter Cell electronics Topologically flat surface High fill factor Adjustable resistor value Low RC -> very fast Active recharge Ability to turn off noisy pixels Pitch limited by the bump bonding Cell electronics: Active quenching, Bias control, Cell activity, Digital output

17 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 17 Topologically flat and free surface High fill factor Sensitive to light

18 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 18 Topologically flat and free surface High fill factor Sensitive to light

19 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 19 Logic, TDC, Photon counter Cell electronics Topologically flat and free surface High fill factor Sensitive to light

20 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 20 TDC, Photon counter, active recharge Cell electronics Topologically flat and free surface High fill factor Sensitive to light sensorwafer handle wafer on sensor wafer 2. bond sensor wafer to handle wafer 3. thin sensor side to desired thickness 4. process SiMPl arrays on top side sensorwafer handle wafer 1. Structured implant on backside 5. Etching backside & flip chipping on back side

21 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 21 TDC, Photon counter, active recharge Cell electronics Topologically flat and free surface High fill factor Sensitive to light sensorwafer handle wafer on sensor wafer 2. bond sensor wafer to handle wafer 3. thin sensor side to desired thickness 4. process SiMPl arrays on top side sensorwafer handle wafer 1. Structured implant on backside 5. Etching backside & flip chipping on back side

22 n+n+ n - non-depleted region n - depleted gap region n Next generation SiMPl devices Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 22 TDC, Photon counter, active recharge Cell electronics Topologically flat and free surface High fill factor Sensitive to light sensorwafer handle wafer on sensor wafer 2. bond sensor wafer to handle wafer 3. thin sensor side to desired thickness 4. process SiMPl arrays on top side sensorwafer handle wafer 1. Structured implant on backside 5. Etching backside & flip chipping on back side

23 Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 23 Thanks for the attention!!

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