Download presentation
Presentation is loading. Please wait.
1
TSV: Via lining & filling sami.franssila@aalto.fi
3
TSV degree of difficulty www.yole.fr, 2010
4
Basic via structure Benfield
5
Process flow Benfield
6
Profile & filling options
7
Profile & step coverage
8
Dielectric requirements IEEE 2009 3D system integration conference
9
Resistance
10
Why is thinning needed? Step coverage of sputter? – Maximum aspect ratio ~ 5 – Tapering makes sure the seed is continuous – W_bottom=20um, t=650um wafer -> w = 134um -> pitch ~ 200um Pitch < 100 – > wafer has to be thinned down
12
Silicon vias Silex
13
Silicon vias Silex
17
Epoxy-lining
18
Filling with sacrificial support
19
Packaging with TSV cap wafer
20
Wire bonding via metal
21
Via electrical results
22
Nickel wire magnetic assembly Fischer, Roxhed:
23
Ni wire process flow Fischer, Roxhed:
24
Solder filling
26
Copper ball filling
28
TSV filled by CNTs
31
CNT growth
Similar presentations
© 2025 SlidePlayer.com. Inc.
All rights reserved.