1. Lithography Explored Leslie Chapman June 27, 2007

2. TEKS Objectives (A) plan and implement investigative procedures including asking questions, formulating testable hypotheses, and selecting equipment and technology. (B) identify uses of electromagnetic waves in various technological applications, such as fiber optics, optical scanners, microwaves, and microfabrication. (C) communicate valid conclusions.

3. Language (SIOP) Objectives Students will: Discuss their plan in groups. Write their plan and have it reviewed by instructor prior to starting experiment. State and justify their conclusions.

4. THE ASSIGNMENT Design a CD label for your favorite music artist using the UV Lithography technique.

5. Lithography Process Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

6. Background Information Process through which very small 3-D features can be produced. Involves a series of steps that creates successive layers of materials. Substrate (CD) Positive Photoresist (S-1813) UV Light Mask (transparency with design) Substrate – process starts here. Silicon is the preferred material. Photoresist – a chemical that is sensitive to radiation (i.e. light) and whose properties (i.e. solubility) are changed when exposed to radiation. Mask – contains opaque (blocking radiation) and clear areas (allowing transmission of radiation), which allows the radiation to pass through only selected areas to create the desired pattern. The photoresist is exposed to radiation using the mask which contains a pattern that is transferred to the top layer.

7. Lithography Process Create a mask. Start with a substrate Cover surface with photoresist. Soft bake Expose the wafer to energy Develop the wafer

8. Photo Lithography Changing light source = type of lithography Types of UV Light Photo X-ray UV

9. Industrial Uses of Lithography Electronics and Telecommunications –Television, radio and printers –Calculators and watches –Video cameras and computers (microprocessor) –Cell phones and waveguides Aviation and Aerospace –Airplanes, meterology equipment and Spaceships Automobile –Cars (microchips trigger inflation of air bag) –Traffic light (signals) Pharmaceutical –Lab on a chip –Portable blood analyzers (microchip- based sensing devices)

10. Applications of Lithography A truly amazing MEMS device. It is a sophisticated MEMS Thermal Actuator Complex MEMS Ratchet Mechanism

11. Incredible MEMS Clutch mechanism. This is actually a complex device that required a working clutch mechanism. Gears are 50 microns across.

12. An early micromotor built in the SUMMiT technology. For size comparison a microscopic dust mite is shown on top.

13. Applications of X-ray Lithography Examples [9] [9] http://www.ca/sandia.gov/liga/tech.html Micro gears Micro motor core Switching mechanism

14. THE ASSIGNMENT Work in pairs to Design a CD label for your favorite music artist using the UV Lithography technique. Each pair will design two CD labels –One CD will be the control. –The other CD will be varied (photoresist or exposure time). State and justify the impact your variation had on the final product. Constraints –Design must be drawn in black ink only. –Design must be able to fit on a CD.

15. Create a design Transfer the design to transparency paper (inkjet or copy machine) Keep the transparency clean

16. 1. Prepare Substrate Clean with isopropanol Bake at 115°C for 60 seconds Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

17. 2. Apply Positive Photoresist Photoresist is spin coated on to CD Students will dip CD in S-1813 to get even spread. Effective for λ 340 – 450 nm Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

18. 3. Softbake 115°C for 60 seconds Complete when photoresist is hard to the touch. Temp. range: 5 – 550°C (41 - 1022°F) Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

19. 4. Expose Long wave UV mini lamp (Intensity = 230 μW/cm 2 ) Exposure time: 25 seconds Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

20. 5. Develop Immerse wafer in solution for 40 – 60 seconds. Agitation is recommended. Quickly remove the wafer from the developer bath and rinse with deionized water bath for 30 seconds (using the wafer holder). Place the wafer on a clean room wipe. Dry the wafer holder. Prepare Substrate Apply Photoresist SoftbakeExpose Develop Post Exposure Bake

21. 6. Post Exposure Bake Bake at 115°C for 60 seconds Set a hotplate to the required temperature. Place the wafer on the hotplate, start timing. When the time is up, remove the wafer.

22. Aprons, gloves and safety goggles required at all times. UV goggles required during exposure. The more photoresist present, the longer the bake time. Reminders

23. Teacher Expectations Thorough Planning Mask Design Implementation Conclusions explained

24. Points (for Instructor) to Consider Give time limit on mask design. Students may design on computer or by hand. Intricacy of design may impact exposure quality. Thickness of photoresist impacts bake time Exposure time could impact image seen on substrate Substrate surface must be very clean Students must wear UV goggles when operating UV lamp

25. Time Frame Three class periods (50 minutes each) 1.Day One – Background Info, Mask Design, Substrate Preparation, 2.Day Two – Wafer Preparation, Apply photoresist, Softbake 3.Day Three – Expose, Develop, State Conclusions

26. THANK YOU Dr. Kim Mr. Creary Dr. Conkey Dr. Srinivasa Mr. Derry Colleagues in the program