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An Efficient Method for Chip-Level Statistical Capacitance Extraction Considering Process Variations with Spatial Correlation W. Zhang, W. Yu, Z. Wang, Z. Yu, R. Jiang, J. Xiong To be presented on DATE’2008
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Outline Introduction Preliminary Statistical Capacitance Extraction
Chip-Level Capacitance Extraction Considering Spatial Correlation Numerical Results Conclusion
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Process Variations Become an issue in 90nm technology and beyond
Systematic: Pattern-dependent Modeled with deterministic methods Random: Need stochastic modeling Challenges to computational efficiency Monte-Carlo simulation Involves thousands of stochastic samplings Suffers from huge computational time (converging rate ) Benchmark approach Photo from Synopsys [GLS-VLSI’06] In this work, we focus on the effect of random variation, and we assume that systematic variation is already applied.
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Existing Methods Recently proposed approaches
FastSies [ICCAD’05]: rough surface, non-sampling, SBIE Perturbation [ICCAD’05]: quadratic model of C, Taylor’s expansion on potential matrix and solution Spectral Stochastic Collocation Method [DATE’07]: HPC technique, higher accuracy than perturbation, efficient techniques for solving potential matrix and variable reduction Limitations of Perturbation & SSCM Model the fluctuation of each surface panel (large #variable k) Time k2 time of running 3-D field solver Small structures; variation model for rough surface
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Our Contribution Chip-level capacitance extraction Contributions
Considering fluctuation of each panel may not be necessary Window-based method, covariance among windows needed How to get the statistical capacitance of a critical path Contributions Simple variation model Intra-window algorithm Capacitance covariance among windows Statistical method for full-path extraction 100x or more faster than MC simulation
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Outline Introduction Preliminary Statistical Capacitance Extraction
Grid-Based Variation Model Homogenous Chaos Expansion Statistical Capacitance Extraction Chip-Level Capacitance Extraction Considering Spatial Correlation Numerical Results Conclusion
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Grid-Based Variation Model
Described in [TCAD’07] Random variables Width, thickness, spacing, ILD thickness Grid model and spatial correlation In each cell: each physical parameter has an unique value Among cells: characterized by a correlation matrix Gridding scheme depends on Knowledge of manufacturing Error tolerance Uniform grids Nonuniform grids
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Homogenous Chaos Homogenous chaos expansion for stochastic function
Hermite polynomials are for Gaussian random process The orthogonality of Hermite polynomials
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Homogenous Chaos HCE converges for any Gaussian random process with finite second-order moments HPC has optimal convergence rate for a Gaussian random process [SIAM-JSC’02] The Askey Scheme
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Outline Introduction Preliminary Statistical Capacitance Extraction
Hermite Polynomial Collocation (HPC) Method Variable Preprocessing Chip-Level Capacitance Extraction Considering Spatial Correlation Numerical Results Conclusion
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HPC Method Hermite polynomial expansion of capacitance:
Perform Galerkin method with M polynomials: Computing time: K times of conventional capacitance extraction, independent of solver
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Sparse Grid Quadrature
A technique to reduce collocation points for quadrature Level k grid has 2k+1 degree of exactness One-dimensional quadrature (Gaussian quadrature) Collocation point set :k+1 points d-dimensional quadrature Point set About 2d points for level 1 accuracy, 2d2 for level 2 Weights:
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Need level k grid for 2k+1 degree of exactness
HPC with Sparse Grid Solve with sparse grid Conclusion: sparse grid with level k accuracy required for order k expansion of capacitance Order k expansion C and Ψj at most order k CΨj at most order 2k Need level k grid for 2k+1 degree of exactness For quadratic capacitance model, sparse grid with level 2 accuracy is needed, that means 2d2 collocation points for numerical quadrature
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Some Acceleration Techniques
If the number of variable (quadrature dimension) is small, Sparse Grid may have more collocation points than the Gaussian quadrature In this case, we use Gauss quadrature instead There are duplicate points with different weights Consider it to reduce calls of capacitance extraction If 3-D capacitance extractor with iterative solver is used, minimum spanning tree of collocation points is constructed Employing the preceding solution as the initial guess of iterative solver can speedup the next capacitance solution
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Variable Preprocessing
HPC requires independent random variables For an intra-window extraction, the variables may be not independent if several variation cells are involved Get independent variables with Cholesky factorization A simple example
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Summary: Intra-Window Extraction
Algorithm Intra-Window Capacitance Extraction (Wi) 1. Preprocess variables inside Wi 2. Calculate collocation points {pj} 3. For each pj Solve desired capacitances in Wi at pj 5. For each desired capacitance Ckl 6. Evaluate coefficients in Evaluate mean and variance with Can be done by any solver
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Outline Introduction Preliminary Statistical Capacitance Extraction
Chip-Level Capacitance Extraction Window and Grid Partition Inter-Window Covariance Full-Path Capacitance Extraction Numerical Results Conclusion
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Window and Grid Partition
Sophisticated techniques are actually used for window partition and capacitance assembling Because we focus on the variation-aware extraction, assume a simple partition and assembling technique Extraction windows and variation grid The setting of extraction windows depend on balancing the accuracy and efficiency Variation grid depends on manufacturing process and accuracy tolerance They have different strategy, and a window may involve several variation grid cells
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Inter-Window Covariance
For any two windows i and j: Firstly consider the covariance between variables Reverse the preprocessing step to have physical parameters Transformed to covariance between functionals Check out from the grid-based variation model
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Covariance between functionals
Level-0 functional has 0 covariance with any other Other functionals in the quadratic model produce the following covariance pairs All converted to the covariance between variables
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Covariance between functionals, proof
Problem: Derive Solution: Correlation matrix of Perform Cholesky decomposition:
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Computational Complexity
Most covariance between functionals are 0. Only O(Mi+Mj) calculations are needed, if a window does not include many grid cells Not many window pairs need to be considered, because the correlation coefficient decays to about 10-4 at distance 3 Ignore far window induces little error Correlation coefficient
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Full-Path Capacitance Extraction
We consider simple capacitance assembling Just sum the capacitances from related windows Mean of total capacitance Variance of total capacitance Explicit quadratic form or PDF Get the independent variable PFA may be need to reduce variable Obtain PDF with the technique of characteristic function [ICCAD’05] C14 C13 C12 C11
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Summary: Full-Path Extraction
Algorithm Full-Path Capacitance Extraction 1.Partition windows for capacitance extraction 2.For each window Wi do 3. Run Intra-Window Extraction(Wi) 4.For each critical net k with related window set Wk 5. Utilize the capacitances for windows in Wk to calculate the full-path capacitance.
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Outline Introduction Preliminary Statistical Capacitance Extraction
Chip-Level Capacitance Extraction Considering Spatial Correlation Numerical Results Conclusion
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Experiment 1 FastCap 2.0 is used to extract intra-window capacitances with samplings of geometry Experiments run on a Sun server with 750MHz CPU The first case 2 conductors: 1140um each, with spacing 2um 10 windows(each: 114um) Variation grid and window partition have coincide boundary Variation sources: one thickness, two widths Standard deviation:0.2um
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Exp 1, Results 10,000 Monte-Carlo simulations: 13293s
Model Quadrature Points Time(s) Total Cap Err. Coupling Cap Err. Mean Std Linear 7 9.34 -0.10% -1.00% -0.06% -1.31% Quadratic 25 33.5 -0.03% -0.66% 0.04% -0.70% Capacitance variance is largely underestimated if ignore the inter-window correlation
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Experiment 2 Overlapped grids and windows
# variable in each window increases from 3 to 6 Speedup to Monte-Carlo simulation is still > 100 Due to increase of variable, computational time increases by 2.0 and 3.8 times Up to now, the linear model show enough accuracy The following experiment shows the necessity of quadratic model Model Quadrature Points Time(s) Total Cap Err. Coupling Cap Err. Mean Std Linear 13 19.2 -0.12% -0.90% -0.10% -1.74% Quadratic 85 126 0.06% -0.44% -0.32%
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Experiment 3 & 4 Choose spacing as the only variation source
Significant advantage of quadratic model A practical large case width, height, ILD thickness, spacing 8 normal window and 1 shift widow Model Points Time(s) Total Cap Err. Coupling Cap Err. Mean Std Linear 2 2.67 0.04% -3.45% 0.08% -3.09% Quadratic 3 3.97 -0.02% -0.69% -0.07% -0.83% Model Points (normal) Points (shift) Time(s) Speedup to MC Mean Err. Std Err. Linear 13 21 251 718 0.01% -1.89% Quadratic 85 221 1803 100 -0.07% -0.83%
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Outline Introduction Preliminary Statistical Capacitance Extraction
Chip-Level Capacitance Extraction Considering Spatial Correlation Numerical Results Conclusion
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Conclusion A practical framework for chip-level capacitance extraction considering spatial correlated variations An efficient HPC technique is presented for extract the statistical capacitances within the extraction window The formula for the covariance of capacitances from different windows is derived Efficient algorithm is proposed to calculate the statistics of full-path capacitance Numerical experiments show that the method is of high accuracy and more than 100x faster than the MC simulation
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