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Radiation Hard Sensors for the BeamCal of the ILC C. Grah FCAL Collaboration 10 th ICATPP Conference, Villa Olmo
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10.10.2007 C.Grah: Radhard Sensors for BeamCal2 Contents The ILC and the very forward region of the detectors for the International Linear Collider BeamCal – requirements Radiation hard materials under investigation: CVD diamond Silicon GaAs and SiC Conclusions
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10.10.2007 C.Grah: Radhard Sensors for BeamCal3 The International Linear Collider ILC Parameters of the ILC: e + e - accelerator, sc cavities, gradient 31.5 MV/m => 30km long CMS energy: 200 to 500 GeV (possible upgrade to 1 TeV) One interaction region, beam crossing angle of 14mrad and two detectors („push-pull“ scenario) Peak luminosity: 2 x 10 34 cm -2 s -1 typical beam size: (h x v) 650 nm x 5.7nm & beam intensity 2 x 10 10 e + e - ~ 30 km
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10.10.2007 C.Grah: Radhard Sensors for BeamCal4 Very Forward Region of the ILC Detectors R&D of the detectors in the forward region is done by the FCAL Collaboration. Precise (LumiCal) and fast (BeamCal) luminosity measurement Hermeticity (electron detection at low polar angles) Mask for the inner detectors Not shown here: GamCal, a beamstrahlung photon detector at about 180m post-IP. LumiCal TPC ECAL HCAL BeamCal
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10.10.2007 C.Grah: Radhard Sensors for BeamCal5 The Beam Calorimeter - BeamCal Interaction point Compact EM calorimeter with sandwich structure: 30 layers of 1 X 0 o3.5mm W absorber and 0.3mm radiation hard sensor Angular coverage from 5mrad to 28 mrad (6.0 > |η| > 4.3) Moliére radius R M ≈ 1cm Segmentation between 0.5 and 0.8 x R M BeamCal LDC ~10cm ~12cm Space for electronics
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10.10.2007 C.Grah: Radhard Sensors for BeamCal6 The Challenges for BeamCal e+e- pairs from beamstrahlung are deflected into the BeamCal 15000 e + e - per BX => 10 – 20 TeV total energy dep. ~ 10 MGy per year strongly dependent on the beam and magnetic field configuration => radiation hard sensors Detect the signature of single high energetic particles on top of the background. => high dynamic range/linearity e-e- e+e+ Creation of beamstrahlung at the ILC ≈ 1 MGy/a ≈ 5 MGy/a e-e- e-e- γ e-e- γ e+e+ e.g. Breit-Wheeler process
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10.10.2007 C.Grah: Radhard Sensors for BeamCal7 Diamond as Sensor Material Manufacturing of diamond has become more and more available. CVD deposition of polycrystalline diamonds is available at wafer scale (3”-6” diameter) Properties:DiamondSilicon Hardness* 10,000 kg/mm 2 1100 kg/mm 2 Density 3.52 g/cm 3 2.33 g/cm 3 Atom density* 1.77 x 10 23 1/cm 3 0.50 x 10 23 1/cm 3 Thermal expansion coefficient 1.1 ppm/K2.6 ppm/K Thermal conductivity* 20.0 W/cmK1.412 W/cmK Dielectric strength 10 MV/cm0.3 MV/cm Resistivity 10 13 - 10 16 Ωcm2.3 x 10 5 Ωcm Electron mobility 2,200 cm 2 /Vs1350 cm 2 /Vs Hole mobility 1,600 cm 2 /Vs480 cm 2 /Vs Bandgap 5.45 eV1.12 eV Energy/eh-pair13eV3.62 eV Av. eh/100μm (MIP)36007800 *highest value of all solid materials (diamond values from Fraunhofer IAF webpage)
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10.10.2007 C.Grah: Radhard Sensors for BeamCal8 Polycrystalline Chemical Vapour Deposited Diamonds pCVD diamonds are an interesting material: radiation hardness (e.g. LHC pixel detectors) advantageous properties like: high mobility, low ε R = 5.7, thermal conductivity availability on wafer scale Samples from two manufacturers are under investigation: Element Six TM Fraunhofer Institute for Applied Solid-State Physics – IAF 1 x 1 cm 2 200-900 μm thick (typical thickness 300μm) Ti(/Pt)/Au metallization (courtesy of IAF)
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10.10.2007 C.Grah: Radhard Sensors for BeamCal9 IV Characteristics Typical current-voltage characteristics of a good pCVD diamond. No breakthrough up to 500V. Very low currents of a few picoamperes. Symmetric (linear) behavior (ramping up) Hysteresis observed for all pCVD samples (ramping down).
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10.10.2007 C.Grah: Radhard Sensors for BeamCal10 MiP Response of pCVD Diamond typical spectrum of an E6 sensor Sr90 source Preamplifier Sensor box Trigger box & Gate PA discr delay ADC Sr 90 diamond Scint. PM1 PM2
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10.10.2007 C.Grah: Radhard Sensors for BeamCal11 CCD Measurement ~ CCD CCD = Charge Collection Distance = mean drift distance of the charge carriers = charge collection efficiency x thickness ADC Channels ~ charge Counts
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10.10.2007 C.Grah: Radhard Sensors for BeamCal12 CCD Behavior CCD is a function of the applied electric field. Saturation at about 1V/µm.
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10.10.2007 C.Grah: Radhard Sensors for BeamCal13 Linearity Test at CERN PS Hadronic beam, 3 & 5 GeV Fast extraction mode ~10 4 -10 7 particles / ~10 ns ADC signal gate 10 ns 17 s Diamond Setup Beam Scint.+ PMTs. Response of diamond sensor to beam particles (no preamplifier/attenuated) Photomultiplier signals
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10.10.2007 C.Grah: Radhard Sensors for BeamCal14 Response vs. Particle Fluence 30% deviation from a linear response for a particle fluence up to ~10 6 MIP/cm 2 The deviation is at the level of the systematic error of the fluence calibration. E64 FAP2 Fraunhofer IAF Element Six
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10.10.2007 C.Grah: Radhard Sensors for BeamCal15 High Dose Irradiation Irradiation up to several MGy using the injector line of the S-DALINAC: 10 ± 0.015 MeV and beam currents from 10 to 100 nA corresponding to about 60 to 600 kGy/h Superconducting DArmstadt LINear ACcelerator Technical University of Darmstadt Energy spectrum of shower particles in BeamCal V.Drugakov 6X 0
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10.10.2007 C.Grah: Radhard Sensors for BeamCal16 Preparations and Programme GEANT4 simulation of the geometry => R = N FC /N Sensor = 0.98 /particle = 5.63 MeV/cm Beam setup SampleThickness, µm Dose, MGy E6_B2 (E6)500>1 DESY 8 (IAF)300>1 FAP 5 (IAF)470>5 E6_4p (E6)470>5 Apply HV to the DUT Measure CCD ~20 min Irradiate the sample ~1 hour CCD: Charge Collection Distance collimator preamp box absorber
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10.10.2007 C.Grah: Radhard Sensors for BeamCal17 Testbeam Setup BeamCollimatorSensorFaraday Cup
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10.10.2007 C.Grah: Radhard Sensors for BeamCal18 Results: CCD vs. Dose 100 nA (E6_4p)100 nA (FAP5) Silicon starts to degrade at 30 kGy. High leakage currents. Not recoverable. After absorbing 7MGy: CVD diamonds still operational.
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10.10.2007 C.Grah: Radhard Sensors for BeamCal19 Behaviour after Irradiation Slight increase of currents for higher doses. No significant change of the current-voltage characteristics up to 1.5 MGy.
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10.10.2007 C.Grah: Radhard Sensors for BeamCal20 CCD Behaviour after Irradiation after 1.5 MGy ~ -30% ~ -80% after 7 MGy
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10.10.2007 C.Grah: Radhard Sensors for BeamCal21 After Irradiation: IAF Sample strong „pumping“ behaviour. before/after ~ 7MGy signal recovery after 20 Gy ▪ FAP 5 irradiated, 1st measurement ▪ FAP 5 irradiated, additional 20 Gy ▪ before irradiation ▪ after irradiation
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10.10.2007 C.Grah: Radhard Sensors for BeamCal22 Monocrystalline CVD Diamond Sensors sCVD diamond area: a few mm 2, ~thickness 300 µm, metallization Ø3mm -25 V IV Characteristics (too low current for our setup) 100% efficient at low electric fields!
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10.10.2007 C.Grah: Radhard Sensors for BeamCal23 GaAs Sensor Material Produced by the Siberian Institute of Technology, Tomsk semi-insulating GaAs doped by Sn (shallow donor) compensated by Cr (deep acceptor): to compensate electron trapping centers EL2+ and provide i-type conductivity.
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10.10.2007 C.Grah: Radhard Sensors for BeamCal24 GaAs Prototype Details 500 µm thick detector, divided into 87 5x5 mm pads Mounted on a 0.5 mm PCB with fanout Metallization is V (30 nm) + Au (1 µm) Works as a solid state ionization chamber and structure is provided by metallization (similar to diamond)
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10.10.2007 C.Grah: Radhard Sensors for BeamCal25 Properties of the GaAs Sensor Rpad 500 MOhm, pad capacity about 12 pF, dark current 1 μA @ 500 V CCD = 50% of sensor thickness
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10.10.2007 C.Grah: Radhard Sensors for BeamCal26 First View on Testbeam Results Spatial CCD distribution corresponds to the beam profile Pad with 2 CCD regions - due to collimation while irradiation → No trap diffusion Dark current increased up to about 2 μA @ 500 V beam spot (~1 MGy)
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10.10.2007 C.Grah: Radhard Sensors for BeamCal27 Radiation Hard Silicon 400 V reverse voltage depletion zone mCz Si, radiation hard, thickness 380 μm, 5x5 mm 2 n+ on n-configuration works as solid state ionization chamber, but active volume = depletion zone signal by drifting excess charge carriers guard rings to avoid surface currents guard rings
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10.10.2007 C.Grah: Radhard Sensors for BeamCal28 Radhard Silicon - Before Irradiation depletion voltage: 336 V → operational voltage 400 V
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10.10.2007 C.Grah: Radhard Sensors for BeamCal29 Silicon - Under Irradiation Signal/Noise vs DOSE Intended as a first step using the radhard silicon CCD remained constant Noise increased strongly No cooling CCD vs DOSE
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10.10.2007 C.Grah: Radhard Sensors for BeamCal30 Silicon Carbide SiC is a potential sensor material with a high bandgap of > 3eV First SiC material provided by the Technical University of Cottbus (BTU) ~1cm 2 size very asymmetric behavior with high dark currents at low voltages => no signal detectable. Need material with higher resistivity.
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10.10.2007 C.Grah: Radhard Sensors for BeamCal31 Summary The FCAL Collaboration develops the detectors in the very forward region of the ILC detectors. BeamCal is an important part of the instrumentation. The requirements on the radiation hardness and linearity of the sensors are challenging. CVD diamonds, radiation hard silicon, GaAs and SiC are interesting materials for this task and are under investigation. http://www-zeuthen.desy.de/ILC/fcal/
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Cooperation with: SLAC Stanford University Iowa State University Wayne State University FCAL Collaboration Aim: design and construction of Collaboration High precision design luminosity detectors beam monitors photon detectors University of Colorado Brookhaven National Lab NY Yale University New Haven Laboratoire de l Accélérateur Linéaire Orsay Royal Holloway University London AGH University, Cracow I nstitute of N uclear P hysics, Cracow DESY J oint I nstitute N uclear R esearch Dubna N ational C enter of P article & HEP Minsk Prague Acad. of Science VINCA Inst. f. Nuclear Science Belgrade Tel Aviv University http:// www-zeuthen.desy.de/ILC/fcal / EUROTeV, EUDET, NoRHDIA INTAS
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