1. John D. Cressler 9/01 1 21 st Century Communications Market - wireless devices + computer links + transportation + space +... Frequency bands pushing higher Huge market but stringent device requirements Moral: Need High-Performance But Low-Cost Device Technology SiGe HBT - first bandgap-engineered Si transistor - better , V A, f T, f max, NF min than Si BJT - III-V performance + Si fabrication cost - 200 GHz SiGe HBTs possible! SiGe HBT BiCMOS Technology - SiGe HBT + best-of-breed Si CMOS - analog + digital + RF + passives for system-on-a-chip solutions - in commercial production (IBM, Maxim, TEMIC, etc.) SiGe Technology  

2. John D. Cressler 9/01 2 Focus:“Next-Generation Device Technologies” Fundamental device physics, fabrication, device and circuit characterization, RF and microwave properties of devices, profile optimization for specific circuit / system applications, device / circuit interactions, device simulation and circuit-level modeling Research Program (John D. Cressler) Device Physics Si vs SiGe vs SiC noise, linearity breakdown issues effects of T, radiation Simulation parameter models profile optimization mixed-mode 2D / 3D Circuits RF / MMIC analog / digital power electronics extreme environments State-of-the-Art Hardware       Specialties: - SiGe devices and technology - SiC devices and technology - radiation effects - extreme temperatures

3. John D. Cressler 9/01 3 SiGe Devices and Technology 1) RF / microwave noise and linearity understanding 2) Profile optimization issues, stability limits, and novel device physics phenomena 3) Device-to-circuit interactions and modeling of novel device phenomena 4) Radiation effects in SiGe HBT BiCMOS (total dose + SEU) 5) Breakdown limits and voltage constraints for RF circuits 6) Avalanche multiplication measurement and modeling 7) Understanding of 1/f noise and its up-conversion to phase noise 8) Effects of C-doping on SiGe HBTs 9) Cryogenic operation SiC Devices and Technology 1) SiC diodes for high-power / high-temperature power systems 2) Effects of radiation on SiC devices and the SiO 2 /SiC system 3) Termination modeling and design for multi-kV blocking Other 1) Operation of SOI CMOS in extreme environments (radiation and low / high T) Personnel - 9 PhD, 1 MS, and 2 undergraduate students Funding Agents: - SRC, NSF, NASA-GSFC, IBM, NASA-CSPAE, NASA-Glenn, On Semi., JPL, TI, Rockwell Current Research Activities (John D. Cressler)