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Published byGary Buddy Johnston Modified over 9 years ago
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Power Device Characteristics Voltage Rating: Off state blocking voltage – exceed and destroy! Current Rating: On (saturation) state maximum – exhibits current limiting, can result in damage if power/ junction temperature rating is exceeded. Switching speed: Maximum rates of change of currents and voltages – determines switching losses On State Voltage : determines On-state losses. Power rating: Maximum internal power dissipation above which junction temperature rises above damage level. Subject to external cooling measures.
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Solid State Power Devices Bipolar Junction Transistors (BJT) Insulated Gate Bipolar Transistor (IGBT) Metal Oxide-Semiconductor Field Effect Transistor (MOSFET) Thyristors (SCR, TRIAC) Integrated-Gate-Controlled Thyristors (IGCT) Gate Turn-Off Thyristors (GTO) MOS Controlled Thyristors (MCT) MOSFET – High frequency ( > 100 khz) “Low” Voltage ( < 300 v) IGBT – Very High Power (DC applications ~ Megawatts) Low Frequency ( < 50 kHz) Thyristors – (Utility applications 1-2 Megawatts)
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MOSFET + V GS - S D G V DS + - IDID V GS V GS(th) IDID
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MOSFET Features Voltage Rating : < 200 v Cannot tolerate reverse voltages Current Rating: Up to 200 A, can operate multiple devices in Parallel Low On-state Resistance when properly cooled High switching speeds >100 kHz Low energy drive requirements
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IGBT C - ICIC G E V GE - + V CE + ICIC V GE
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IGBT Features Voltage Rating : Up to 3 Kv Can tolerate moderate reverse voltages Current Rating: Up to 1200 A, can operate multiple devices in Parallel Low On-state Losses Switching speeds up to 30 kHz Low energy drive requirements
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Integrated Power Modules (IPM) Combine multiple power devices, drive circuitry, fault protection and heat sink into single module. Single and multi phase motor drives.
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Power Diodes Line Frequency Diodes (60 Hz – 9 kV, 5 kA) Fast Recovery Diodes (Rapid Turn-on) Schottky Diodes (Low Forward/On voltage) Silicon Carbide/SiC (High Voltage, High speed, High Temp) High Forward Currents – up to 5 kA High Blocking (Reverse)Voltages – up to 9 kV VFVF IFIF V BD IRIR
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