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Crystallization of Perylene Diimides for Organic Field Effect Transistors Bristee Das October 3, 2014
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Outline of Presentation 1.Overview of Organic Field Effect Transistors 2.Background on N1100 semiconductor 1.Goal of project 2.Experimental Design 3.Results 4.Future work
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What are OFETs? The field effect transistor is a major component of modern electronics and circuitry that functions as an on-off switch to control and amplify electric signal In recent decades, increased interest in organic field effect transistors (OFETs), which contain organic small molecule or polymer-based semiconductors, has developed due to their inexpensiveness, mechanical flexibility, and easy processability
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How do OFETs work? OFETs consist of source, drain, and gate electrodes. The organic semiconductor acts as a bridge between the source and drain, and an insulating dielectric layer keeps it spaced from the gate. When a gate bias is applied between the gate and semiconductor, charges accumulate at the semiconductor-dielectric interface that balances layer of charge of opposite polarity on gate electrode Applying a bias across the source and drain creates a lateral electric field that allows these accumulated charges to move. Further adjustment of the gate voltage modulates the conductivity of the channel. Image: Y-L Loo, AIChE Journal, 2007, 113
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Background on N1100 In particular, the perylene alkyldiimide (PDIR) family is known for having “one of the highest n-type mobilities known” 2 Image: K. Willa, R. Hausemann, T. Mathis, A. Facchetti, Z. Chen, B. Batlogg, Journal of Applied Physics, 2013, 113 2 C. Piliego, F. Cordella, D. Jarzab, S. Lu, Z. Chen, A. Facchetti, M.A. Loi, Appl. Phys. A, 2009, 95 N1100 Single crystal mobility = up to 6 cm 2 /V.s
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Goals of Summer Project Learn how to fabricate thin film transistors Utilize various post-deposition annealing techniques on a variety of substrate surfaces to gain a better understanding of the effects of surface modifications, solvent vapor annealing treatments, and thermal annealing treatments on crystallization kinetics in thin films and how to control the crystallization process
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General Experimental Design Surface treatments included OTS treatment of SiO2 and PFBT treatment of gold for bottom contact, bottom gate geometry devices N1100 was evaporated to a thickness of 45 nm As evaporated films are amorphous Conducted ex-situ and in-situ thermal and solvent vapor annealing of N1100 thin films using: Toluene THF DCM Hexanes Chlorobenzene
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Solvent Stands for substrates Glass Cover Experimental design: ex-situ SV annealing
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Ex-situ SVA Morphology TolueneHexanesChlorobenzene DCM
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Results: Summary of ex-situ testing Ex-situ Treatment Method Mobility (cm 2 /Vs) Threshold Voltage (V) Thermal annealing, 130c, 1 hr 0.856 +/- 0.195 -7.15 +/- 15.4 Toluene 1.73E-06 +/- 1.29E-0612.8 +/- 25.2 Hexanes 3.66E-03 +/- 3.80E-04 -2.943 +/- 1.73 DCM 5.01E-02 +/- 3.08E-0313.0E +/- 0.879 THF 1.29E-04 +/- 7.29E-06 -6.472E+01 +/4.93 Chlorobenzene 2.69E-03 +/- 1.47E-03 1.50E+01 +/- 4.51
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Experimental design: in-situ SV annealing N2 Exhaust
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Results: in-situ Toluene SVA
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N1100 In-situ Thermal Annealing 120C
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Conclusions Ex-situ treatments –Performance of TA devices was better than that of SVA devices –For various SVA devices, DCM gave the largest mobility, Hexanes and Chlorobenzene treatment gave the largest on/off ratio In-situ treatments –THF fastest – mobility plateau’d out after 30 min –Chlorobenzene slowest – took around 840 min to plateau –Need to retest DCM with video capture Generally, thermal annealing yields better performance compared to SVA for both ex-situ and in-situ treatment
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Future Work Continue in-situ SVA with accompanying video for remaining solvents Further analysis and comparison of in-situ and ex-situ data for each solvent Perform AFM to obtain a better understanding of how morphology is changing with solvent choice Attempt simultaneous in-situ thermal and solvent-vapor annealing to see the effects on the crystallization process
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Acknowledgements
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