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Published byReginald Shepherd Modified over 9 years ago
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Highlights on Some Experimental Progress of FeSe Xingjiang ZHOU 2014/10/08
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S. Medvedev et al., Nat. Mater. 8 (2009) 630. N. Katayama et al., J. Phys. Soc. Jpn. 79 (2010)113702. F.-C. Hsu et al., PNAS 105 (2008) 14262; Bulk FeSe Superconductor Simple crystal structure; In FeSe, Tc can be enhanced from 8.5K to 36.7K at high pressure; In Fe(Se x Te 1-x ), Tc can reach 14.5K.
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FeSe Films Grown on Graphene Single-layer FeSe/Graphene is non superconducting above 2.2K; Tc increases with the number of layers in FeSe/Graphene films, reaching 8K for 8 layers with a superconducting gap of 2.1 meV; V-shaped STS curve in the superconducting state indicating a node in the gap function. C. L. Song et al., Phys. Rev. B 84 (2011) 020503(R). C. L. Song et al., Science 332 (2011) 1410. 8-Layer 2-Layer ~30-Layer
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FeSe Films Grown on SrTiO 3 (001) Single-layer FeSe/SrTiO 3 film shows a STS peak at ~20 meV, corresponding to an estimated Tc~80 K if it is superconducting; Double-layer FeSe/SrTiO 3 film is semiconducting. 20.1meV 9.5meV Single-layer, T c ~ 80 K? Double-layer, semiconducting Q. Y. Wang et al., Chinese Phys. Lett. 29 (2012) 037402.
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Distinct Electronic Structure of Superconducting FeSe/SrTiO 3 Films Cut 1 Cut 2 D. F. Liu et al., Nature Communications 3 (2012) 931. Distinct electronic structure: no Fermi surface near , only electron-like Fermi surface near M.
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Phase Diagram and Indication of Tc~65K in Single-Layer FeSe/SrTiO 3 Film 2 kTc=6~7 S. L. He et al., Nature Materials 12, 605 (2013). Tc~65 K There are two phases present in single-layer FeSe/SrTiO 3 film with different electronic structure (N phase and S phase); By annealing in vacuum, N phase can transform into S phase; Indication of Tc~65 K observed.
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S. Y. Tan et al., Nature Materials 12, 634 (2013). Layer-Dependent Electronic Structure in FeSe/SrTiO 3 Films For two-layer or multiple layer FeSe/SrTiO 3 films, it is reported that SDW state is formed; The SDW temperature decreases with increasing number of FeSe layers.
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Substrate Strain-Dependent Electronic Structure and Superconductivity of Single-layer FeSe Film FeSe BR : SL-FeSe/Nb:BaTiO 3 /KTaO 3 heterostructures, relaxed; a=3.76 A FeSe BU : SL-FeSe/Nb:BaTiO 3 /KTaO 3 heterostructures, unrelaxed; a=3.99 A FeSe SX : SL FeSe/Nb:SrTiO 3 /KTaO 3 heterostructures; a=3.99 A FeSe S : FeSe/Nb:SrTiO 3 ; a=3.906 A R. Peng et al., Nature Communications 5 (2014) 5044. The lattice constant changes from 3.76 A to 3.99 A, Tc shows little change near (70+_5)K; The superconductivity is not sensitive to strain of the substrate.
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J. J. Lee et al., arXiv: 1312.2633. Replica Bands and Electron-Phonon Coupling in Single-layer FeSe/SrTiO 3 Film Replica bands are observed with a separation of ~100 meV; It is proposed this is due to electron coupling with STO phonon.
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Transport and Magnetic Measurements on Single-Layer FeSe/SrTiO 3 Films W. H. Zhanget al., Chinese Physics Letters 31 (2014) 017401. Resistivity Magnetism Both transport and magnetic measurements indicate single-layer FeSe/SrTiO 3 is superconducting although the Tc is not as high as that from ARPES.
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arXiv: 1406.3435.
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Schematic of 4 point probe (4PP ) transport measurement setup. J. F. Ge et al., arXiv: 1406.3435.
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11T 3K Temperature and external magnetic field dependence of electrical transport property of a single-layer film of FeSe J. F. Ge et al., arXiv: 1406.3435.
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4PP transport measurement on Bi2212 crystal (Tc~90K) with measurement configurations of C1423 (a) and C1234 (b), respectively. J. F. Ge et al., arXiv: 1406.3435.
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Temperature dependence of electrical transport property of another FeSe/STO sample measured with the 100-μm-tip-separation 4PP fixed at one measuring location while temperature was increasing. J. F. Ge et al., arXiv: 1406.3435.
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