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ECE 695: Processing Plasma: Etching JK LEE (Spring, 2006)

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Presentation on theme: "ECE 695: Processing Plasma: Etching JK LEE (Spring, 2006)"— Presentation transcript:

1 ECE 695: Processing Plasma: Etching JK LEE (Spring, 2006)

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97 IEDF Affects Contact Process Etch stop High polymerization with low energy ions Ion shading effect, large ion angular dist. Bowing – Ion specular reflection High polymerization and large Ion energy Ion shading effect, some ion angular dist. Straight profile Low pressure, collisionless sheath Optimum polymerization with medium ion energy Vertical mask profile, less ion specular reflection Low ion shading effect, small ion angular dist.

98 Profile Control – IEDF and Polymer 1D PIC code – 3 years in development with POSTECH/Lam Bulk plasma and polymerization assumption Can be linked to 2D/3D profile simulators 2D/3D Profile Simulators Ion flux and density from bulk simulator Can be used to predict contact profiles

99 Plasma Application Modeling, POSTECH Speed Function (Compared)

100 Plasma Application Modeling, POSTECH Speed Function (Mask Pattern)

101 Plasma Application Modeling, POSTECH Speed Function (Depending On The Particle Flux)

102 Plasma Application Modeling, POSTECH Speed Function (Depending On The Particle Flux)

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112 2005. 3. 10 Simulation 을 이용한 Plasma 특성연구 H.S. Ko and J.K. Lee Department of Electronic and Electrical Engineering, POSTECH ( Comparison of Plasma Kinetic Properties of Various Equipments )

113 SCCM-TE (TEL)Exelan-CFE (Lam)Enalber (AMT) D92 SAC EtcherD92 SiN mask Etcher - ▶ Dual-CCP 4.5cm, 30mT ▶ Uniformity : - Dual cathode - Dual gas feed ▶ Narrow Dual-CCP : 2.0cm, 40mT ▶ PR Selectivity : Heated top electrode ▶ Uniformity : Dual gas feed ▶ VHF Dual-CCP : Very High Freq. 3.2cm, 30mT ▶ High E/R & PR Sel. : Very High frequency ▶ Uniformity : - CSTU : Vertical B-Field - NSTU : Dual gas feed ~ ~ 60MHz 2MHz ~ 13.56MHz ~ 162MHz Specification of Equipments Application Plasma Modeling

114 Paschen Breakdown Voltage Curve

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