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ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR.

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Presentation on theme: "ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR."— Presentation transcript:

1 ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR

2 THREE TERMINAL DEVICE CONSISTS OF TWO PN JUNCTIONS CURRENT AMPLIFIER

3 NPN BJT PHYSICAL STRUCTURE E BC n+n+ n-n- p base emitter collector

4 PNP BJT PHYSICAL STRUCTURE E BC n p p base emitter collector

5 TWO PN JUNCTION DEVICE P TYPE N TYPE P TYPE EMITTER BASE COLLECTOR

6 ACTUAL SCALED DIMENSIONS P N P EMITTER BASE COLLECTOR

7 MODES OF OPERATION CUTOFF ACTIVE OR LINEAR SATURATION

8 PNP CUTOFF MODE OF OPERATION - V EB + + V BC - REVERSE-BIASED EMITTER COLLECTOR BASE I E =0 I C =0 I B =0

9 PNP ACTIVE MODE OF OPERATION + V EB - + V BC - FORWARD-BIASEDREVERSE-BIASED EMITTER COLLECTOR BASE IEIE ICIC IBIB

10 PNP SATURATION MODE OF OPERATION + V EB - - V BC + FORWARD-BIASED EMITTER COLLECTOR BASE IEIE ICIC IB0IB0

11 NPN CUTOFF MODE OF OPERATION + V BE - - V CB + REVERSE-BIASED EMITTER COLLECTOR BASE I E =0 I C =0 I B =0

12 NPN ACTIVE MODE OF OPERATION - V BE + - V CB + FORWARD-BIASEDREVERSE-BIASED EMITTER COLLECTOR BASE IEIE ICIC IBIB

13 NPN SATURATION MODE OF OPERATION - V BE + +V CB - FORWARD-BIASED EMITTER COLLECTOR BASE IEIE ICIC IB0IB0

14 BJT CURRENTS

15 CURRENT RATIOS

16 COLLECTOR CURRENT CHARACTERISTICS

17 BASE CURRENT CHARACTERISTICS

18 EMITTER CURRENT CHARACTERISTICS

19 BJT CURRENT SUMMARY

20 LARGE SIGNAL MODELS T MODEL HYBRID PI MODEL

21 T MODEL C B E V BE + - E B C V EB + - NPN PNP IBIB IBIB IEIE IEIE

22 PNP HYBRID PI MODEL V EB E CB IEIE IBIB ICIC I SC exp(V EB /V T ) PNP

23 NPN HYBRID PI MODEL I SC exp(V BE /V T ) NPN B V BE C E

24 BJT SYMBOLS NPN PNP

25 COLLECTOR CURRENT CHARACTERISTICS iCiC v BE V BE

26 COLLECTOR CURRENT CHARACTERISTICS iBiB i B =80  A i B =60  A iC {iC { V CE =2V

27 DC AND AC CURRENT GAIN

28 SMALL SIGNAL PARAMETERS BASE RESISTANCE EMITTER RESISTANCE COLLECTOR RESISTANCE TRANSCONDUCTANCE

29 BASE RESISTANCE

30 INCREMENTAL BASE RESISTANCE

31 TOTAL BASE RESISTANCE INCLUDES BASE SPREADING RESISTANCE MODELING PHYSICAL STRUCTURE r x ~ 50Ω TO 100Ω BASE SPREADING RESISTANCE SMALL COMPARED TO INCREMENTAL BASE RESISTANCE NORMALLY OMITTED

32 INCREMENTAL EMITTER RESISTANCE TYPICALLY VERY SMALL SIGNIFICANT PARAMETER IN COMMON BASE AMPLIFIERS

33 INCREMENTAL EMITTER RESISTANCE ANALYSIS

34 INCREMENTAL EMITTER RESISTANCE DEFINITION

35 EARLY EFFECT DEFINES FINITE OUTPUT RESISTANCE AT THE COLLECTOR TERMINAL COLLECTOR CURRENT LINES IN ACTIVE REGION OF OPERATION ARE NOT FLAT CONSEQUENCE OF SIGNIFICANT CONTRIBUTION OF COLLECTOR-BASE VOLTAGE - V CB

36 COLLECTOR OUTPUT RESISTANCE

37 TRANSCONDUCTANCE

38 TRANSCONDUCTANCE DEFINITION

39 TOTAL CURRENTS

40 SMALL SIGNAL MODEL rπrπ roro b e c + v π - gmvπgmvπ


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