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Bipolar Junction Transistors: Operation, Circuit Models, and Applications AC Power CHAPTER 10
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Figure 10.1 10-1 Controlled-source models of linear amplifier transistor operation Figure 10.1
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Fig ure 10.2 10-2 Models of ideal transistor switches Figure 10.2
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Figure 10.4 10-3 Bipolar junction transistors Figure 10.4
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Figure 10.5, 10.6 10-4 Current flow in an npn BJT Figure 10.5 Flow of emitter electrons into the collector in an npn BJT Figure 10.6
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Figure 10.7, 10.8 10-5 Definition of BJT voltages and currents Figure 10.7 The BE junction open-collector curve Figure 10.8
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Figure 10.9 10-6 (a) Ideal test circuit to determine the i-v characteristic of a BJT Figure 10.9a (b) The collector-emitter output characteristics of a BJT Figure 10.9b
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Figure 10.10 10-7 Determination of the operation region of a BJT Figure 10.10
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Fig ure 10.1 3 10-8 Load-line analysis of a simplified BJT amplifier Figure 10.13
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Figure 10.15, 10.16 10-9 Circuit illustrating the amplification effect in a BJT Figure 10.15 Amplification of sinusoidal oscillations in a BJT Figure 10.16
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Figure 10.20, 10.21 10-10 Practical BJT self-bias DC circuit Figure 10.20 DC self-bias circuit represented in equivalent-circuit form Figure 10.21
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An npn BJT small – signal model Hybrid-parameter (h-parameter) small-signal model for BJT ; input impedance ; reverse voltage ratio ; forward current ratio ; output admittance
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h parameters for the 2N2222A BJT
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; ;
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Figure 10.22 10-11 An npn BJT large-signal model Figure 10.22
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LED driver circuit Figure 10.24, 10.25
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Figure 10.30 10-12 BJT switching characteristic Figure 10.30
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Figure 10.31, 10.32 10-13 TTL NAND gate Figure 10.31 Figure 10.32
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