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Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: 10-20 Ω-cm Thickness: 505-545 µm.

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Presentation on theme: "Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: 10-20 Ω-cm Thickness: 505-545 µm."— Presentation transcript:

1 Fabrication of p-n junction in Si Silicon wafer [1-0-0] Type: N Dopant: P Resistivity: 10-20 Ω-cm Thickness: 505-545 µm

2 Oxidize the Si wafer SiO 2

3 Photo resist Mask A Expose the PR through the mask with UV light Cover the SiO2 with photoresist (PR) Load Mask A

4 SiO 2 Photo resist Mask A Remove exposed PR Remove SiO 2

5 ::::::::::::: SiO 2 ::::::::::::: Windows Implanted p region B B Remove unexposed PRDoping by ion implantation

6 :::::::::: SiO 2 :::::::::: Windows Implanted p region B B Remove unexposed PRDoping by ion implantation

7 ::::::::::::: SiO 2 ::::::::::::: B B Al deposition for contacts

8 ::::::::::::: SiO 2 ::::::::::::: B B Lithography (Mask B) Mask B Photo resist

9 ::::::::::::: SiO 2 ::::::::::::: B B Mask B Photo resist Developer/Al Etching

10 ::::::::::::: SiO 2 ::::::::::::: B B Remove unexposed PR p-n junction

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