1. Advance Nano Device Lab. Fundamentals of Modern VLSI Devices 2 nd Edition Yuan Taur and Tak H.Ning 0 Ch5. CMOS Performance Factors

2. Advance Nano Device Lab. 1 Ch5.1 Basic CMOS Circuit Elements

3. Advance Nano Device Lab. 2

4. CMOS Inverters 3

5. Advance Nano Device Lab. CMOS Inverter Transfer Curve 4

6. Advance Nano Device Lab. CMOS Inverter Transfer Curve 5

7. Advance Nano Device Lab. CMOS Inverter Noise Margin 6

8. Advance Nano Device Lab. CMOS Inverter Noise Margin 7

9. Advance Nano Device Lab. CMOS Inverter Noise Margin 8

10. Advance Nano Device Lab. CMOS Inverter Switching Characteristics 9

11. Advance Nano Device Lab. CMOS Inverter Switching Characteristics 10

12. Advance Nano Device Lab. Switching Energy and Power Dissipation 11

13. Advance Nano Device Lab. Quasistatic Assumption 12

14. Advance Nano Device Lab. CMOS NAND and NOR Gates 13

15. Advance Nano Device Lab. Two-Input CMOS NAND Gate 14

16. Advance Nano Device Lab. Two-Input CMOS NAND Gate 15

17. Advance Nano Device Lab. Noise Margin of NAND Circuits 16

18. Advance Nano Device Lab. Layout of a Single Device 17

19. Advance Nano Device Lab. Layout of a CMOS Inverter 18

20. Advance Nano Device Lab. Layout of a Two-Input CMOS NAND 19

21. Advance Nano Device Lab. 20 Ch5.2 Parasitic Elements

22. Advance Nano Device Lab. Source-Drain Resistance 21

23. Advance Nano Device Lab. Accumulation-Layer Resistance and Spreading Resistance 22

24. Advance Nano Device Lab. Sheet Resistance 23

25. Advance Nano Device Lab. Contact Resistance 24

26. Advance Nano Device Lab. Resistance in a Self-Aligned Silicide Technology 25

27. Advance Nano Device Lab. Parasitic Capacitances 26

28. Advance Nano Device Lab. Junction Capacitance 27

29. Advance Nano Device Lab. Overlap Capacitance 28

30. Advance Nano Device Lab. Overlap Capacitance 29

31. Advance Nano Device Lab. Gate Resistance 30

32. Advance Nano Device Lab. Gate Resistance 31

33. Advance Nano Device Lab. Gate Resistance 32

34. Advance Nano Device Lab. Gate Resistance 33

35. Advance Nano Device Lab. Interconnect R and C 34

36. Advance Nano Device Lab. Interconnect R and C 35

37. Advance Nano Device Lab. Interconnect R and C 36

38. Advance Nano Device Lab. Interconnect Scaling 37

39. Advance Nano Device Lab. Interconnect Scaling 38

40. Advance Nano Device Lab. Interconnect Resistance 39

41. Advance Nano Device Lab. RC Delay of Global Interconnects 40

42. Advance Nano Device Lab. RC Delay of Global Interconnects 41

43. Advance Nano Device Lab. 42 Ch5.3 Sensitivity of CMOS Delay to Device Parameters

44. Advance Nano Device Lab. Propagation Delay of a CMOS Inverter Chain 43

45. Advance Nano Device Lab. Propagation Delay of a CMOS Inverter Chain 44

46. Advance Nano Device Lab. 45 Propagation Delay of a CMOS Inverter Chain

47. Advance Nano Device Lab. Bias-Point Trajectories in a Switching Event 46

48. Advance Nano Device Lab. Bias-Point Trajectories in a Switching Event 47

49. Advance Nano Device Lab. Delay Equation: Switching Resistance, Input and Output Capacitance 48

50. Advance Nano Device Lab. 49 Delay Equation: Switching Resistance, Input and Output Capacitance

51. Advance Nano Device Lab. CMOS Delay Sensitivity to pMOSFET/nMOSFET width ratio 50

52. Advance Nano Device Lab. Device Width Effect with Respect to Load Capacitance 51

53. Advance Nano Device Lab. Sensitivity of Delay to Channel Length 52

54. Advance Nano Device Lab. Sensitivity of Delay to Gate Oxide Thickness 53

55. Advance Nano Device Lab. Sensitivity of Delay to Power-Supply Voltage and Threshold Voltage 54

56. Advance Nano Device Lab. Power and Delay Tradeoff 55

57. Advance Nano Device Lab. Sensitivity of Delay to Series Resistance 56

58. Advance Nano Device Lab. Sensitivity of Delay to Overlap Capacitance 57

59. Advance Nano Device Lab. Miller Effect 58

60. Advance Nano Device Lab. Sensitivity of Delay to Junction Capacitance 59

61. Advance Nano Device Lab. Sensitivity of Delay to Junction Capacitance 60

62. Advance Nano Device Lab. Top and Bottom Switching of a Two-Way NAND Gate 61

63. Advance Nano Device Lab. Top and Bottom Switching of a Two-Way NAND Gate 62

64. Advance Nano Device Lab. 63 Ch5.4 Performance Factors of Advanced CMOS Devices

65. Advance Nano Device Lab. Small-Signal Equivalent Circuit 64

66. Advance Nano Device Lab. Small-Signal Equivalent Circuit 65

67. Advance Nano Device Lab. Unity-Current-Gain Frequency of an Intrinsic MOSFET 66

68. Advance Nano Device Lab. Unity-Current-Gain Frequency of an Intrinsic MOSFET 67

69. Advance Nano Device Lab. Effect of Transport Parameters on CMOS Performance 68

70. Advance Nano Device Lab. Low-Temperature CMOS 69

71. Advance Nano Device Lab. Low-Temperature CMOS 70