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Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of.

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Presentation on theme: "Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of."— Presentation transcript:

1 Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of Madrid, CSIC SPAIN J. Fernández-Rossier, R. Aguado www.ua.es/personal/jfrossier/ Spin dependent Capacitance Z19-1 Gate Tuning Anisotropy CdTe+1 Mn

2 GaMnAs Single electron transistor cond-mat/0602608 Coulomb blockade anisotropic magnetoresistance: Single electronics meets spintronics Authors:J. Wunderlich et al.

3 Mn (2+) S=5/2 2S+1=6 PL Intensity www.ua.es/personal/jfrossier/ Y. Léger et al., PRL 95, 047403 (05) L. Besombes et al. PRL 93, 207403 (04) Single Exciton Spectroscopy 1 Mn per dot

4 S T =S e +M Heisenberg Ising MzMz

5 Single exciton spectroscopy (1 Mn dot) EXPERIMENTS: Y. Léger et al. PRL 95, 047403 (05) THEORY: J. Fernández-Rossier, PRB73, 045301 (06) WE UNDERSTAND e+h+Mn

6 Theory I: The dot STATES NUMERICAL DIAGONALIZATION STATES WITH a FIXED NUMBER of CARRIERS (Controlled By Gate Voltage)

7 GATE CONTROL of Magnetic Anisotropy Heisenberg STST Q=-1Q=0Q=+1Q=+3 Free HH LH Ising Z XX MzMz

8 MASTER EQUATION Scattering Rates Theory: Single electron transport Density matrix ( V g, V b )

9 CHARGING the dot E Q=0 Q=1 Q=2 VGVG VGVG Q Q=0 Q=1 Q=2 G

10 CHARGING the dot S=3 S=2 Spin dependent CHARGING ENERGY 3 PEAKS instead of 1 !!

11 VGVG E

12 VGVG E

13 VGVG E

14 VGVG E Q=0

15 VGVG E Q=1/3

16 VGVG E Q=2/3

17 VGVG E Q=3/3

18 Inelastic single spin spectroscopy

19 CONCLUSIONS Electric Tuning of magnetic anisotropy Ising Z XX MzMz www.ua.es/personal/jfrossier/ SPIN conditional charging energy Q=+1 Q=+3

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