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Multi-terminal spin dependent transport in carbon nanotubes Chéryl FEUILLET-PALMA Laboratoire Pierre Aigrain Ecole Normale Supérieure, Paris France Co-workers : T. Delattre, T. Kontos, G. Fève, J.-M. Berroir, D.C. Glattli, B. Plaçais Theory: A. Cottet, M.-S. Choi
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V SD H cL < H cR H cR H cL R H Spin signal A magnetic tunnel junction… FET geometry SiO 2 400nm Doped Si V SD VGVG CGCG F F Spin-FET Behaviour Importance of Non-local effects
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An unusual magnetic tunnel junction…
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Non-local measurement Hysteretic switching in both the current and the non-local voltage Back gate controls both MR and MRV signals similarly to the local case. N-F ConductanceF-N Voltage
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Non-local measurement One « side » can be in the Coulomb blockade regime and not the other side. Modulations of the MR in current similar to two probe case dI/dV (µS) T=1.8K
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dI/dV (µS) V (µV) Diamond pattern in both non-local voltage and conductance as a function of two gates characteristic of multi-dot physics T = 1.8 K Greyscale of non-local voltage Multi-dot physics and non-local measurement Greyscale of non-local conductance
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Multi-dot physics and non-local measurement Side gate controls the non-local MR and MRV on the other side of the structure Back gate fixedSide gate fixed
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Spin injection in Carbon Nanotube and spin-fet behaviour Multi-dot physics : quantum coherent spintronics Conclusion Non-local MR and MRV are gated controlled Spin transport qualitatively described in a multi- terminal scattering model…
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