1. 2.50 μm The crystalline quality of epitaxial piezoelectric PMN-PT film on Si is better than bulk single crystals. Hyper-Active piezoelectric Nanosystems NIRT ECCS-0708759 C.B. Eom, R. Blick,M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk C.B. Eom, R. Blick, M.S. Rzchowski, X.Q. Pan, D.G. Schlom, L.Q. Chen. V. Aksyuk University of Wisconsin-Madison, University of Michigan, Ann Arbor, Penn State University, Bell Laboratories Major challenges are emerging as MEMS move to smaller size and increased integration density, while requiring faster and larger relative motion range. Continued scaling of MEMS to the nanometer regime, NEMS, requires revolutionary advances in actuators. We overcome these challenges with Hyper-Active NEMS devices using epitaxial thin film heterostructures of Pb(Mg 1/3 Nb 2/3 )-PbTiO 3 (PMN-PT) giant piezoelectric materials integrated directly on silicon. We will explore the scientific issues governing their nanoscale size effects and electromechanical coupling. SrRuO 3 PMN-PT 2 nm Si SrRuO 3 PMN-PT 100 nm SrTiO 3 TEM by X.Q. Pan, Michigan Epitaxial piezoelctric films on silicon Background Fabrication of Piezoelectric Cantilever Theory 245nm Pt: 50nm PMN-PT: 300nm Silicon: 175nm SRO/STO/SiO2: 100/13/10nm 100/50nm 245nm 75 um Pt (B.E) 50 um Si STO 2 nm Longitudinal (d 33 ) and Transverse (d 31 ) piezoelectric responses of a nano-island is much higher than continuous films 0.5  m Pb(Mg 1/3 Nb 2/3 )-PbTiO 3 (PMN-PT)/ 0.5  m Si, 5  m wide and 100  m long bi-morph cantilever Orders of magnitude lower actuation voltage required for piezoelectric switches displacements (Z) as compared to classical electrostatic switches. Inset show modeled cantilever. d 33 (pm/V)e 31 (C/m 2 ) PMN-PT bulk single crystal1500-2500-30* Epitaxial PMN-PT Film on Si1200-30 Previous work Best PZT Film400-13 Previous work Best PMN-PT Film280<-7 Broader Impact Teachers from the SESO secondary school in Mayaguez, Puerto Rico participating in atomic layer controlled growth in the PI’s laboratory in summer 2005. We will bring secondary school science teachers from Mayagüez, Puerto Rico each summer for a nanotechnology learning/research experience. We have developed the fabrication process of piezo-MEMS cantilever with new class of giant piezoelectric material. This research will develop a fundamental scientific understanding of new phenomena in hyper active nanoscale electromechanical devices, which can be applied for novel and high performance signal processing, communications, sensors and transducers for medical imaging, and nano- positioning actuators. Hyper-Active NEMS from giant piezoelectric materials will reduce power consumption and enhance speed of actuators and sensitivity of sensors. Outreach -80-60-40-20020406080 -1800 -1200 -600 0 600 1200 1800 d 33 (pm/V) Field (kV/cm) Continuous film 4  m x 4  m cut capacitor Epitaxial oxide thin film nanostructures fabricated by e-beam lithography which can be used for nanoscale piezoelectric characterization. Longitudinal (d33) and Transverse (d31) piezoelectric responses of epitaxial piezoelectric PMN-PT film on Si is as good as PMN-PT bulk single crystals.