1. الکترونیک صنعتی دانشگاه تهران – بهزاد آسائی 1385

2. صنعتی الکترونیک BY: B. Asaei 2 ترانزیستور Bipolar Junction Transistors (BJTs)

3. صنعتی الکترونیک BY: B. Asaei 3 ترانزیستور Generic BJT Application Clamped Inductive Load

4. صنعتی الکترونیک BY: B. Asaei 4 ترانزیستور Bipolar Junction Transistors (BJTs)

5. صنعتی الکترونیک BY: B. Asaei 5 MOSFET I-V Characteristics and Circuit Symbols

6. صنعتی الکترونیک BY: B. Asaei 6 MOSFET Switching Models for Buck Converter Buck converter using power MOSFET. MOSFET equivalent circuit valid for off- state (cutoff) and active region operation. MOSFET equivalent circuit valid for on-state (triode) region operation.

7. صنعتی الکترونیک BY: B. Asaei 7 Turn-on Equivalent Circuits for MOSFET Buck Converter

8. صنعتی الکترونیک BY: B. Asaei 8 MOSFET-based Buck Converter Turn-on Waveforms Free-wheeling diode assumed to be ideal. (no reverse recovery current).

9. صنعتی الکترونیک BY: B. Asaei 9 Paralleling of MOSFETs

10. صنعتی الکترونیک BY: B. Asaei 10 ارزیابی As shown in Figure 1.1, a variety of circuitries in power electronics can be produced today with MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors), which were introduced into the market one by one in the mid 80’s. Compared to other switchable power semiconductors, such as conventional GTO-thyristors, these types of transistors have a number of application advantages, such as active turn-off even in case of short-circuit, operation without snubbers, simple control unit, short switching times and, therefore, relatively low switching losses. The production of MOSFETs and IGBTs is comparatively simple and favourable and can easily be managed by today’s technologies in microelectronics. It was mainly due to the rapid development of IGBTs and power MOSFETs that power electronics continued open up new markets, and that their fields of application increased tremendously at the same time. Bipolar high-voltage power transistors that were still very common a few years ago, have been almost completely replaced by IGBTs.